US5625218A
Expired / Lapsed
US
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Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof
Assignee: Denso Corp
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Filing: 1995-06-16
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Granted: 1997-04-29
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Expires: 2015-06-16
Abstract
Abstract A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.
Inventors
- 👤 Hideya Yamadera
- 👤 Takeshi Ohwaki
- 👤 Yasunori Taga
- 👤 Makio Iida
- 👤 Makoto Ohkawa
- 👤 Hirofumi Abe
- 👤 Yoshihiko Isobe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
113 words
A semiconductor device having a fuse whose state can be changed by an application of fusing energy, said device comprising: a silicon substrate; a first insulator film formed on said silicon substrate, being made of a silicon type oxide; a thin film resistor formed on said first insulator film, as said fuse, comprising chromium, silicon and tungsten before application of fusing energy; a wiring portion formed over a portion of said thin film resistor, being made of aluminum or an alloy thereof; and a passivation film formed over said wiring portion and said thin film resistor, being made of at least one compound selected from a silicon nitride and an insulator including silicon.
Claim 2
Dependent Claim
113 words
A semiconductor device having a fuse whose state can be changed by an application of fusing energy, said device comprising: a silicon substrate; a first insulator film formed on said silicon substrate, being made of a silicon type oxide; a thin film resistor formed on said first insulator film, as said fuse, comprising chromium, silicon and tungsten before application of fusing energy; a wiring portion formed over a portion of said thin film resistor, being made of aluminum or an alloy thereof; and a passivation film formed over said wiring portion and said thin film resistor, being made of at least one compound selected from a silicon nitride and an insulator including silicon.
Claim 3
Dependent Claim
37 words
A semiconductor device as defined by claim 1, further comprising a barrier film disposed between said portion of said thin film resistor and said wiring portion, said barrier film being made of tungsten or an alloy thereof.
Claim 4
Dependent Claim
54 words
A semiconductor device as defined by claim 1, further comprising a continuously extending second insulator film disposed between said passivation film and said wiring portion and between said passivation film and said thin film resistor except said portion of said thin film resistor, said second insulator film being made of an insulator including silicon.
Claim 5
Dependent Claim
19 words
A semiconductor device as defined by claim 1, wherein said thin film resistor is made of an amorphous substance.
Claim 6
Dependent Claim
35 words
A semiconductor device as defined by claim 1, wherein said thin film resistor contains chromium in a range between 20 and 50 atm % and tungsten in a range between 1 and 20 atm %.
Claim 7
Dependent Claim
35 words
A semiconductor device as defined by claim 5, wherein said thin film resistor contains chromium in a range between 20 and 50 atm % and tungsten in a range between 2 and 14 atm %.
Claim 8
Dependent Claim
23 words
A semiconductor device as defined by claim 2, wherein said barrier film contains tungsten in a range between 5 and 50 atm %.
Claim 9
Dependent Claim
37 words
A semiconductor device as defined by claim 1, wherein said first insulator film and said passivation film are made of a insulator including silicon selected from a group of SiO x , PSG, BSG, BPSG and SiN.
Claim 10
Dependent Claim
33 words
A semiconductor device as defined by claim 3, wherein said second insulator film is made of a insulator including silicon selected from a group of SiO x , PSG, BSG, BPSG and SiN.
Claim 11
Independent Claim
131 words
A method of producing a semiconductor device having a fuse whose state can be changed by an application of fusing energy, said method comprising the steps of: a lamination step of sequentially forming, over a semiconductor substrate through a first insulator film, a thin film resistor comprising chromium, silicon, and tungsten as said fuse before application of fusing energy, and a film wiring being made of aluminum or an alloy thereof; an etching step of removing a portion of said film for wiring laminated on said thin film resistor by etching; and a passivation step of depositing a passivation film over the surface of the laminate subjected to said etching treatment, said passivation film being made of at least one compound selected from a silicon nitride and an insulator including silicon.
Claim 12
Independent Claim
131 words
A method of producing a semiconductor device having a fuse whose state can be changed by an application of fusing energy, said method comprising the steps of: a lamination step of sequentially forming, over a semiconductor substrate through a first insulator film, a thin film resistor comprising chromium, silicon, and tungsten as said fuse before application of fusing energy, and a film wiring being made of aluminum or an alloy thereof; an etching step of removing a portion of said film for wiring laminated on said thin film resistor by etching; and a passivation step of depositing a passivation film over the surface of the laminate subjected to said etching treatment, said passivation film being made of at least one compound selected from a silicon nitride and an insulator including silicon.
Claim 13
Dependent Claim
28 words
A method of producing a semiconductor device as defined by claim 10, further comprising a step for forming a barrier film made of tungsten or an alloy thereof.
Claim 14
Dependent Claim
66 words
A method of producing a semiconductor device as defined by claim 10, further comprising a step for forming a continuously extending second insulator film between said passivation film and said wiring portion and between said passivation film and a portion of said thin film resistor corresponding to said removed portion of said film for wiring, said second insulator film being made of an insulator including silicon.
Claim 15
Dependent Claim
23 words
A method of producing a semiconductor device as defined by claim 10, wherein said thin film resistor is made of an amorphous substance.
Claim 16
Dependent Claim
39 words
A method of producing a semiconductor device as defined by claim 10, wherein said thin film resistor contains chromium in a range between 20 and 50 atm % and tungsten in a range between 1 and 20 atm %.
Claim 17
Dependent Claim
39 words
A method of producing a semiconductor device as defined by claim 14, wherein said thin film resistor contains chromium in a range between 20 and 50 atm % and tungsten in a range between 2 and 14 atm %.
Claim 18
Dependent Claim
27 words
A method of producing a semiconductor device as defined by claim 11, wherein said barrier film contains tungsten in a range between 5 and 50 atm %.
Claim 19
Dependent Claim
41 words
A method of producing a semiconductor device as defined by claim 10, wherein said first insulator film and said passivation film are made of a insulator including silicon selected from a group of SiO x , PSG, BSG, BPSG and SiN.
Claim 20
Dependent Claim
37 words
A method of producing a semiconductor device as defined by claim 12, wherein said second insulator film is made of a insulator including silicon selected from a group of SiO x , PSG, BSG, BPSG and SiN.
Claim 21
Dependent Claim
21 words
A semiconductor device as defined in claim 4, wherein said thin film resistor is a single layer of said amorphous substance.
Claim 22
Dependent Claim
21 words
A semiconductor device as defined in claim 13, wherein said thin film resistor is a single layer of said amorphous substance.
Claim 23
Dependent Claim
41 words
A semiconductor device having a fuse whose state can be changed by an application of fusing energy, said fuse being a thin film resistor comprised of a layer of heat-fusible material containing chromium, silicon, and tungsten before application of fusing energy.
Claim 24
Dependent Claim
41 words
A semiconductor device having a fuse whose state can be changed by an application of fusing energy, said fuse being a thin film resistor comprised of a layer of heat-fusible material containing chromium, silicon, and tungsten before application of fusing energy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |