US5624866A
Expired / Lapsed
US
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Semiconductor device provided with trench element isolation film and method for fabricating the same
Assignee: SK Hynix Inc
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Filing: 1995-01-19
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Granted: 1997-04-29
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Expires: 2015-01-19
Abstract
Abstract A semiconductor device with a trench element isolation structure having a trench element isolation film formed to have a small width at the boundary between an active region and a field region, thereby capable of obtaining an improved element isolation function while easily planarizing an insulating film formed in the trench. A thick oxide film is formed at the field region provided with no trench, thereby preventing formation of a parasitic capacitor between the semiconductor substrate and the gate electrode.
Inventors
- 👤 Jae K. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:20
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/012; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0151; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
139 words
A method for fabricating a semiconductor device, comprising the steps of: forming a trench having a predetermined width and a predetermined depth in a portion of a semiconductor substrate corresponding to a boundary between a field region and an active region, and then burying an insulating film in the trench such that the insulating film has a planarized surface, thereby forming a trench element isolation film; implanting an impurity only in a portion of the semiconductor substrate corresponding to the field region, thereby forming an impurity-implanted layer; forming a gate oxide film on a portion of the semiconductor substrate corresponding to the active region and a thick oxide film on the impurity-implanted layer at the field region by use of an oxidation process; and forming a gate electrode overlapping with the gate oxide film and the thick oxide film.
Claim 2
Independent Claim
139 words
A method for fabricating a semiconductor device, comprising the steps of: forming a trench having a predetermined width and a predetermined depth in a portion of a semiconductor substrate corresponding to a boundary between a field region and an active region, and then burying an insulating film in the trench such that the insulating film has a planarized surface, thereby forming a trench element isolation film; implanting an impurity only in a portion of the semiconductor substrate corresponding to the field region, thereby forming an impurity-implanted layer; forming a gate oxide film on a portion of the semiconductor substrate corresponding to the active region and a thick oxide film on the impurity-implanted layer at the field region by use of an oxidation process; and forming a gate electrode overlapping with the gate oxide film and the thick oxide film.
Claim 3
Dependent Claim
37 words
A method in accordance with claim 1, wherein the impurity of the impurity-implanted layer comprises one selected from a group consisting of arsenic, phosphorous, argon and silicon or a mixture of two impurities selected from the group.
Claim 4
Dependent Claim
21 words
A method in accordance with claim 1, wherein the impurity of the impurity-implanted layer has a concentration of 5E14 to 5E16.
Claim 5
Dependent Claim
21 words
A method in accordance with claim 1, wherein the impurity-implanted layer is formed at the entire portions of the field region.
Claim 6
Dependent Claim
26 words
A method in accordance with claim 1, wherein the impurity-implanted layer is formed only at a portion of the field region overlapping with the gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |