US5619467A
Expired / Lapsed
US
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Sense amplifier for semiconductor memory device having feedback circuits
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-29
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Granted: 1997-04-08
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Expires: 2016-03-29
Abstract
Abstract A current sense amplifier circuit for a semiconductor memory device includes a differential amplifier which senses the signal currents input to first and second input nodes, amplifies the difference between the two signals and outputs the sense-amplified signals to first and second output nodes. A first feedback circuit is connected between the second input node and a current controlling node and has a controlling terminal connected to the first output node. A second feedback circuit is connected between the first input node and the current controlling node and has a controlling terminal connected to the second output node. By feeding back voltages from the counterpart output nodes through the cross-connected feedback circuits, the difference between low level input signals can be efficiently detected and a stable sense-amplified output is obtained.
Inventors
- 👤 Jai-Hoon Sim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:29
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/06; G11C7/065; G11C7/062; G11C2207/00; G11C2207/06; G11C2207/063
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
136 words
A sense amplifier for a semiconductor memory device, comprising: a differential amplifier which senses first and second input signals respectively received at first and second input nodes and amplifies a difference between said input signals to cause an amplified difference between first and second difference signals at first and second output nodes; a first feedback circuit coupled between said second input node and a current control node, said first feedback circuit being controlled by said first difference signal from said first output node; and a second feedback circuit coupled between said first input node and said current control node, said second feedback circuit being controlled by said second difference signal from said second output node, said first feedback circuit and said second feedback circuit further increasing said amplified difference across said first and second output nodes.
Claim 2
Dependent Claim
136 words
A sense amplifier for a semiconductor memory device, comprising: a differential amplifier which senses first and second input signals respectively received at first and second input nodes and amplifies a difference between said input signals to cause an amplified difference between first and second difference signals at first and second output nodes; a first feedback circuit coupled between said second input node and a current control node, said first feedback circuit being controlled by said first difference signal from said first output node; and a second feedback circuit coupled between said first input node and said current control node, said second feedback circuit being controlled by said second difference signal from said second output node, said first feedback circuit and said second feedback circuit further increasing said amplified difference across said first and second output nodes.
Claim 3
Dependent Claim
17 words
A sense amplifier according to claim 1, wherein said first and second feedback circuits are NMOS transistors.
Claim 4
Dependent Claim
23 words
A sense amplifier according to claim 1, wherein said input signals are current signals and wherein said amplified difference is a voltage difference.
Claim 5
Dependent Claim
172 words
A sense amplifier for a semiconductor memory device, comprising: first and second bias elements respectively connected between a first voltage terminal and first and second input nodes; first and second amplifier transistors respectively connected between said first and second input nodes and first and second output nodes, said amplifier transistors having gate electrodes respectively cross-connected to said first and second output nodes; first and second load elements respectively connected between said first and second output nodes and a current control node; a current control transistor connected between said current control node and a second voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 6
Dependent Claim
172 words
A sense amplifier for a semiconductor memory device, comprising: first and second bias elements respectively connected between a first voltage terminal and first and second input nodes; first and second amplifier transistors respectively connected between said first and second input nodes and first and second output nodes, said amplifier transistors having gate electrodes respectively cross-connected to said first and second output nodes; first and second load elements respectively connected between said first and second output nodes and a current control node; a current control transistor connected between said current control node and a second voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 7
Dependent Claim
29 words
A sense amplifier according to claim 4, wherein said first and second bias elements are transistors and said first and second load elements are transistors connected to form diodes.
Claim 8
Dependent Claim
34 words
A sense amplifier according to claim 4, wherein threshold voltages of said first and second bias elements, said first and second amplifier transistors, and said first and second load elements are below 0.5 V.
Claim 9
Dependent Claim
26 words
A sense amplifier according to claim 6, wherein said first voltage terminal receives a power supply voltage and said second voltage terminal receives a ground voltage.
Claim 10
Dependent Claim
19 words
A sense amplifier according to claim 4, wherein said first and second feedback circuits are comprised of NMOS transistors.
Claim 11
Dependent Claim
163 words
A sense amplifier for a semiconductor memory device, comprising: first and second amplifier transistors respectively connected between first and second input nodes and first and second output nodes, said amplifier transistors both having gate electrodes connected to said first output node; first and second load transistors respectively connected between said first and second output nodes and a current control node, said load transistors both having gate electrodes connected to said second output node; a current control transistor connected between said current control node and a voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 12
Dependent Claim
163 words
A sense amplifier for a semiconductor memory device, comprising: first and second amplifier transistors respectively connected between first and second input nodes and first and second output nodes, said amplifier transistors both having gate electrodes connected to said first output node; first and second load transistors respectively connected between said first and second output nodes and a current control node, said load transistors both having gate electrodes connected to said second output node; a current control transistor connected between said current control node and a voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 13
Dependent Claim
28 words
A sense amplifier according to claim 9, wherein threshold voltages of said first and second amplifier transistors and said first and second load transistors are below 0.5 V.
Claim 14
Dependent Claim
15 words
A sense amplifier according to claim 10, wherein said voltage terminal receives a ground voltage.
Claim 15
Dependent Claim
19 words
A sense amplifier according to claim 9, wherein said first and second feedback circuits are comprised of NMOS transistors.
Claim 16
Dependent Claim
163 words
A sense amplifier for a semiconductor memory device, comprising: first and second amplifier transistors respectively connected between first and second input nodes and first and second output nodes, said amplifier transistors having gate electrodes cross-connected to said first and second output nodes; first and second load transistors respectively connected between said first and second output nodes and a current control node, said load transistors both having gate electrodes connected to a voltage terminal; a current control transistor connected between said current control node and said voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 17
Dependent Claim
163 words
A sense amplifier for a semiconductor memory device, comprising: first and second amplifier transistors respectively connected between first and second input nodes and first and second output nodes, said amplifier transistors having gate electrodes cross-connected to said first and second output nodes; first and second load transistors respectively connected between said first and second output nodes and a current control node, said load transistors both having gate electrodes connected to a voltage terminal; a current control transistor connected between said current control node and said voltage terminal, said current control transistor having a gate electrode connected to a control terminal; a first feedback circuit connected between said second input node and said current control node, said first feedback circuit being controlled by a first difference signal at said first output node; and a second feedback circuit connected between said first input node and said current control node, said second feedback circuit being controlled by a second difference signal at said second output node.
Claim 18
Dependent Claim
28 words
A sense amplifier according to claim 13, wherein threshold voltages of said first and second amplifier transistors and said first and second load transistors are below 0.5 V.
Claim 19
Dependent Claim
16 words
A sense amplifier according to claim 14, wherein said voltage terminal receives a power supply voltage.
Claim 20
Dependent Claim
19 words
A sense amplifier according to claim 13, wherein said first and second feedback circuits are comprised of PMOS transistors.
References Cited (Backward Citations)
US5438287A
Cited
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