US5619453A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory system having programmable flow control register
Assignee: Micron Technology Inc
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Filing: 1995-07-28
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Granted: 1997-04-08
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Expires: 2015-07-28
Abstract
Abstract A non-volatile memory system having means for altering the sequence of operations carried out under the control of an internal state machine which controls the data processing operations performed on the memory system. A flow control register is used to bypass an operation that would be carried out during the normal functioning of the memory system, where the register contains data bits which can be set to alter the operation of the internal state machine. The memory system is first placed into a test mode which is not accessible under the normal operating conditions. After entering the test mode, data can be written to or read from the flow control register. The data in the flow control register is used to alter the process flow of the memory system, thereby allowing a system designer to monitor how changes in the process flow improve the operation of the system. The present invention can be used to optimize the overall performance of the memory system or to investigate how each step in the process flow impacts later steps.
Inventors
- 👤 Frankie F. Roohparvar
- 👤 Christophe J. Chevallier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:34
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/14; G11C16/16; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/14; G11C29/16
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
186 words
A memory system comprising: an array of memory cells; control means for controlling operation of the memory system in response to memory read, memory program, and memory erase commands from a command source, the control means including (a) a state machine for controlling sequencing of a set of operations and sub-operations performed on a memory cell in the array in response to the memory read, memory program, and memory erase commands; (b) a memory cell read module for reading one of the memory cells in response to the memory read command; (c) a memory cell program module for carrying out a memory program operation to program one of the memory cells in response to the memory program command, with the program operation including a plurality of memory program sub-operations; (d) a memory cell erase module for carrying out a memory erase operation to erase one of the memory cells in response to the erase command, with the erase operation including a plurality of memory erase sub-operations; and (e) a flow controller for causing the state machine to alter the sequencing of the program or erase sub-operations.
Claim 2
Dependent Claim
186 words
A memory system comprising: an array of memory cells; control means for controlling operation of the memory system in response to memory read, memory program, and memory erase commands from a command source, the control means including (a) a state machine for controlling sequencing of a set of operations and sub-operations performed on a memory cell in the array in response to the memory read, memory program, and memory erase commands; (b) a memory cell read module for reading one of the memory cells in response to the memory read command; (c) a memory cell program module for carrying out a memory program operation to program one of the memory cells in response to the memory program command, with the program operation including a plurality of memory program sub-operations; (d) a memory cell erase module for carrying out a memory erase operation to erase one of the memory cells in response to the erase command, with the erase operation including a plurality of memory erase sub-operations; and (e) a flow controller for causing the state machine to alter the sequencing of the program or erase sub-operations.
Claim 3
Dependent Claim
38 words
The memory system of claim 1, wherein the flow controller causes the state machine to alter the sequencing the program or erase sub-operations in response to control parameters stored in a data storage element of the memory system.
Claim 4
Dependent Claim
25 words
The memory system of claim 1, wherein the flow controller causes the state machine to alter the sequencing of both the program and erase sub-operations.
Claim 5
Dependent Claim
30 words
The memory system of claim 1, wherein the erase sub-operations which can be altered include a pre-programming operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 6
Dependent Claim
33 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include a pre-programming verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 7
Dependent Claim
34 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include a high voltage erase operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 8
Dependent Claim
33 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include an erase verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 9
Dependent Claim
46 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include an operation which reduces a distribution of threshold voltages between the memory cells in the memory array, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 10
Dependent Claim
33 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include a programming verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 11
Dependent Claim
33 words
The memory system of claim 1, wherein the program or erase sub-operations which can be altered include a final erase operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 12
Dependent Claim
39 words
The memory system of claim 1, wherein the flow controller is on the same integrated circuit substrate as the control means for controlling operation of the memory system in response to memory read, memory program and memory erase commands.
Claim 13
Dependent Claim
35 words
The memory system of claim 1, further comprising: a flow controller programming module for programming the flow controller to cause the state machine to sequence the set of operations and sub-operations in a desired manner.
Claim 14
Dependent Claim
80 words
The memory system of claim 12, wherein the memory system has a first mode of operation in which a user can program, erase, and read a memory cell of the array of memory cells and a second mode of operation which permits access to the flow controller programming module, and further, wherein access to the second mode of operation occurs upon detection of a signal which is outside of a range of signals applied during the first mode of operation.
Claim 15
Dependent Claim
99 words
The memory system of claim 1, wherein the flow controller is a data storage unit and the data storage unit further comprises: a data inputter for inputting data to be stored in the data storage unit; a volatile memory device for storing data; a non-volatile memory device for storing data; and a data storage unit controller for controlling operation of the data storage unit, including (a) load means for transferring data from the data inputter to the volatile memory device; and (b) a memory device programmer for programming the non-volatile memory device with data from the volatile memory device.
Claim 16
Dependent Claim
30 words
The memory system of claim 14, wherein the data storage unit controller further includes a recall module for transferring data from the non-volatile memory device to the volatile memory device.
Claim 17
Dependent Claim
22 words
The memory system of claim 14, wherein the non-volatile memory device includes first and second non-volatile memory cells for storing complementary data.
Claim 18
Dependent Claim
19 words
The memory system of claim 16, wherein the first and second non-volatile memory cells are floating gate memory cells.
Claim 19
Dependent Claim
193 words
A memory system having a standard mode of operation in which a user can program, erase, and read a memory cell and a non-standard mode of operation, wherein access to the non-standard mode of operation occurs upon detection of a non-standard mode access state different from states which occur during the standard mode of operation, the memory system comprising: an array of memory cells; a state machine for executing a memory read, memory program, and memory erase operation on a memory cell in the array by controlling sequencing of a set of operations and sub-operations performed on the memory cell in the standard mode of operation; non-standard mode detection means for detecting the non-standard mode access state for accessing the non-standard mode of operation, wherein the non-standard mode access state is different from states which occur during the standard mode of operation; and a flow controller for altering the sequencing of the set of operations and sub-operations executed by the state machine in the standard mode of operation in response to a state of the flow controller, wherein the state of the flow controller is set after accessing the non-standard mode of operation.
Claim 20
Dependent Claim
193 words
A memory system having a standard mode of operation in which a user can program, erase, and read a memory cell and a non-standard mode of operation, wherein access to the non-standard mode of operation occurs upon detection of a non-standard mode access state different from states which occur during the standard mode of operation, the memory system comprising: an array of memory cells; a state machine for executing a memory read, memory program, and memory erase operation on a memory cell in the array by controlling sequencing of a set of operations and sub-operations performed on the memory cell in the standard mode of operation; non-standard mode detection means for detecting the non-standard mode access state for accessing the non-standard mode of operation, wherein the non-standard mode access state is different from states which occur during the standard mode of operation; and a flow controller for altering the sequencing of the set of operations and sub-operations executed by the state machine in the standard mode of operation in response to a state of the flow controller, wherein the state of the flow controller is set after accessing the non-standard mode of operation.
Claim 21
Dependent Claim
37 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a pre-programming operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 22
Dependent Claim
38 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a pre-programming verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 23
Dependent Claim
39 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a high voltage erase operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 24
Dependent Claim
38 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include an erase verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 25
Dependent Claim
51 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a sub-operation which reduces a distribution of threshold voltages between the memory cells in the memory array, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 26
Dependent Claim
38 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a programming verify operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 27
Dependent Claim
38 words
The memory system of claim 18, wherein the sub-operations which can be altered by setting the state of the flow controller include a final erase operation, and further, wherein altering the sub-operation includes bypassing or including the sub-operation.
Claim 28
Dependent Claim
21 words
The memory system of claim 18, further comprising: a flow controller programming module for setting the state of the flow controller.
Claim 29
Dependent Claim
48 words
The memory system of claim 18, wherein the flow controller further comprises: a data storage unit which stores a flow control parameter, wherein the flow control parameter alters the sequencing of the set of operations and sub-operations executed by the state machine in the standard mode of operation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-07 | 2000-10-07 | 2001-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-07 | 2004-10-07 | 2005-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-07 | 2008-10-07 | 2009-04-08 | $7700.00 | Window Closed / Lapsed |