US5618756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective WSix deposition
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1996-04-29
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Granted: 1997-04-08
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Expires: 2016-04-29
Abstract
Abstract A method for selectively depositing WSi x is described. Semiconductor device structures are provided in and on a semiconductor substrate wherein WSi x is to be deposited overlying a first portion of the substrate and wherein WSi x is not to be deposited overlying a second portion of the substrate. A layer of organic material is provided over the surface of the substrate overlying the second portion of the substrate. A layer of WSi x is deposited over the surface of the substrate wherein the WSi x is deposited overlying the first portion of the substrate and wherein the presence of the organic material layer prevents the WSi x from depositing overlying the second portion of the substrate completing the selective WSi x deposition in the fabrication of an integrated circuit device.
Inventors
- 👤 Peter Chew
- 👤 Chuck Jang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
137 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein WSi x is to be deposited overlying a first portion of said substrate and wherein WSi x is not to be deposited overlying a second portion of said substrate; providing a layer of organic material over the surface of said substrate overlying said second portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited overlying said first portion of said substrate and wherein the presence of said organic material layer prevents said WSi x from depositing overlying said second portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 2
Independent Claim
137 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing semiconductor device structures in and on a semiconductor substrate wherein WSi x is to be deposited overlying a first portion of said substrate and wherein WSi x is not to be deposited overlying a second portion of said substrate; providing a layer of organic material over the surface of said substrate overlying said second portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited overlying said first portion of said substrate and wherein the presence of said organic material layer prevents said WSi x from depositing overlying said second portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 3
Dependent Claim
13 words
The method according to claim 1 wherein said organic material comprises photoresist material.
Claim 4
Dependent Claim
14 words
The method according to claim 1 wherein said organic material comprises organic polymer material.
Claim 5
Dependent Claim
45 words
The method according to claim 1 wherein said providing said layer of organic material comprises: spin-coating said organic material over the surface of said substrate; and etching back said organic material so that said organic material remains only overlying said second portion of said substrate.
Claim 6
Dependent Claim
21 words
The method according to claim 1 wherein said organic material layer has a thickness of between about 1200 to 1500 Angstroms.
Claim 7
Dependent Claim
36 words
The method according to claim 1 wherein said first portion of said substrate comprises polysilicon gate electrodes and interconnection lines and wherein said WSi x layer overlying said polysilicon comprises polycide gate electrodes and interconnection lines.
Claim 8
Dependent Claim
75 words
The method according to claim 1 wherein said second portion of said substrate comprises a gate electrode on the surface of said semiconductor substrate and source and drain regions within said semiconductor substrate covered by an insulating layer and wherein said first portion of said substrate comprises the surface of said gate electrode and said source and drain regions within contact openings and wherein said WSi x provides a barrier layer within said contact openings.
Claim 9
Independent Claim
160 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing polysilicon gate electrodes and interconnection lines on the surface of a semiconductor substrate wherein said polysilicon gate electrodes and interconnection lines form a first portion of said substrate and wherein said surface of said substrate not covered by said polysilicon gate electrodes and interconnection lines forms a second portion of said substrate; providing a layer of organic material over the surface of said substrate overlying said second portion of said substrate and not overlying said first portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited overlying said polysilicon gate electrodes and interconnection lines and wherein the presence of said organic material layer prevents said WSi x from depositing over said second portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 10
Independent Claim
160 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing polysilicon gate electrodes and interconnection lines on the surface of a semiconductor substrate wherein said polysilicon gate electrodes and interconnection lines form a first portion of said substrate and wherein said surface of said substrate not covered by said polysilicon gate electrodes and interconnection lines forms a second portion of said substrate; providing a layer of organic material over the surface of said substrate overlying said second portion of said substrate and not overlying said first portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited overlying said polysilicon gate electrodes and interconnection lines and wherein the presence of said organic material layer prevents said WSi x from depositing over said second portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 11
Dependent Claim
13 words
The method according to claim 8 wherein said organic material comprises photoresist material.
Claim 12
Dependent Claim
14 words
The method according to claim 8 wherein said organic material comprises organic polymer material.
Claim 13
Dependent Claim
50 words
The method according to claim 8 wherein said providing said layer of organic material comprises: spin-coating said organic material over the surface of said substrate; and etching back said organic material so that said organic material is removed from said top surfaces of said polysilicon gate electrodes and interconnection lines.
Claim 14
Dependent Claim
21 words
The method according to claim 8 wherein said organic material layer has a thickness of between about 1200 to 1500 Angstroms.
Claim 15
Dependent Claim
26 words
The method according to claim 8 wherein said WSi x layer overlying said polysilicon gate electrodes and interconnection lines comprises polycide gate electrodes and interconnection lines.
Claim 16
Independent Claim
170 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing polysilicon gate electrodes on the surface of a semiconductor substrate and source and drain regions within said semiconductor substrate; depositing an insulating layer over the surface of said substrate; depositing a layer of organic material over said insulating layer; etching through said organic material layer and said insulating layer to provide openings to said gate electrodes and to said source and drain regions wherein said organic material layer remains on a first portion of said substrate and wherein said organic material does not exist within said openings comprising a second portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited within said contact openings and wherein the presence of said organic material layer prevents said WSi x from depositing on said first portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 17
Independent Claim
170 words
A method of selective WSi x deposition in the fabrication of an integrated circuit device comprising: providing polysilicon gate electrodes on the surface of a semiconductor substrate and source and drain regions within said semiconductor substrate; depositing an insulating layer over the surface of said substrate; depositing a layer of organic material over said insulating layer; etching through said organic material layer and said insulating layer to provide openings to said gate electrodes and to said source and drain regions wherein said organic material layer remains on a first portion of said substrate and wherein said organic material does not exist within said openings comprising a second portion of said substrate; and depositing a layer of WSi x over the surface of said substrate wherein said WSi x is deposited within said contact openings and wherein the presence of said organic material layer prevents said WSi x from depositing on said first portion of said substrate completing said selective WSi x deposition in the fabrication of said integrated circuit device.
Claim 18
Dependent Claim
13 words
The method according to claim 14 wherein said organic material comprises photoresist material.
Claim 19
Dependent Claim
14 words
The method according to claim 14 wherein said organic material comprises organic polymer material.
Claim 20
Dependent Claim
21 words
The method according to claim 14 wherein said organic material layer has a thickness of between about 1200 to 1500 Angstroms.
Claim 21
Dependent Claim
19 words
The method according to claim 14 wherein said WSi x layer within said contact openings comprises a barrier layer.
Claim 22
Dependent Claim
23 words
The method according to claim 14 further comprising depositing and patterning a conducting layer overlying said WSi x layer within said contact openings.
References Cited (Backward Citations)
US5300455A
Cited
US5231056A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-04-07 | 2000-10-07 | 2001-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-07 | 2004-10-07 | 2005-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-07 | 2008-10-07 | 2009-04-08 | $7700.00 | Window Closed / Lapsed |