US5616947A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an MIS structure
Assignee: Panasonic Holdings Corp
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Filing: 1996-05-31
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Granted: 1997-04-01
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Expires: 2016-05-31
Abstract
Abstract A semiconductor device including a GaAs semiconductor substrate, an insulating layer which is made of material selected from the group MgS, MgSSe and CaZnS and is formed on the GaAs substrate, and a conductive electrode formed on the insulating layer.
Inventors
- 👤 Akiyoshi Tamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D30/00; H10D30/01; H10D30/021; H10D64/01; H10D64/013; H10D64/01358; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
39 words
A semiconductor device comprising: a GaAs semiconductor substrate; an insulating layer which is made of material consisting essentially of MgS, MgSSe or CaZnS and is formed on the GaAs substrate; and a conductive electrode formed on the insulating layer.
Claim 2
Dependent Claim
39 words
A semiconductor device comprising: a GaAs semiconductor substrate; an insulating layer which is made of material consisting essentially of MgS, MgSSe or CaZnS and is formed on the GaAs substrate; and a conductive electrode formed on the insulating layer.
Claim 3
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein an inversion layer is formed in the GaAs semiconductor substrate in accordance with a voltage applied to the conductive electrode.
Claim 4
Dependent Claim
49 words
The semiconductor device according to claim 1, further comprising a source electrode and a drain electrode formed on the GaAs semiconductor substrate, wherein an inversion layer is formed in the GaAs semiconductor substrate and a current flows across the source electrode and the drain electrode through the inversion layer.
Claim 5
Dependent Claim
73 words
A semiconductor device comprising: a GaAs semiconductor substrate having a surface, the surface being covered with a passivation layer which contains at least one of sulfur and selenium and has a thickness of at least one atomic layer; an insulating layer which is made of material consisting essentially of MgS, MgSSe, or CaZnS and is formed on the surface of the GaAs semiconductor substrate; and a conductive electrode formed on the insulating layer.
Claim 6
Dependent Claim
73 words
A semiconductor device comprising: a GaAs semiconductor substrate having a surface, the surface being covered with a passivation layer which contains at least one of sulfur and selenium and has a thickness of at least one atomic layer; an insulating layer which is made of material consisting essentially of MgS, MgSSe, or CaZnS and is formed on the surface of the GaAs semiconductor substrate; and a conductive electrode formed on the insulating layer.
Claim 7
Dependent Claim
28 words
The semiconductor device according to claim 3, wherein an inversion layer is formed in the GaAs semiconductor substrate in accordance with a voltage applied to the conductive electrode.
Claim 8
Dependent Claim
38 words
The semiconductor device according to claim 4, further comprising a source electrode and a drain electrode formed on the GaAs semiconductor substrate, wherein a current flows across the source electrode and the drain electrode through the inversion layer.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2000-03-31 | 2000-09-30 | 2001-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-31 | 2004-09-30 | 2005-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-31 | 2008-09-30 | 2009-04-01 | $7700.00 | Window Closed / Lapsed |