Semiconductor memory integrated circuit

Claim 2

In a semiconductor memory integrated circuit device having means for outputting a plurality of data signals read out from a memory array to a plurality of data output terminals through a plurality of read signal lines, the improvement comprising: a means for electrically connecting the plurality of read signal lines to each other.

Claim 3

In a semiconductor memory integrated circuit device having means for outputting a plurality of data signals read out from a memory array to a data output terminal through a plurality of sense amplifiers and a plurality of output buffers, the improvement comprising: a logic circuit for performing a logical operation on output signals of the plurality of sense amplifiers; and a signal selection circuit for outputting to the data output terminal a signal selected from an output signal of the logic circuit or an output signal of a respective sense amplifier.

Claim 4

In a semiconductor memory integrated circuit device having means for outputting a plurality of data signals read out from a memory array to a data output terminal through a plurality of sense amplifiers and a plurality of output buffers, the improvement comprising: a logic circuit for performing a logical operation on output signals of the plurality of sense amplifiers; and a signal selection circuit for outputting to the data output terminal a signal selected from an output signal of the logic circuit or an output signal of a respective sense amplifier.

Claim 5

A memory device comprising: a memory array having a plurality of rows of word lines, a plurality of columns of bit lines, and a memory cell arranged at each intersection of a word line and a bit line; a plurality of word selection input lines connected to the memory array for applying a word selection input signal to the memory array to select a respective word line; a column selector connected to the memory array for applying a column selection input signal to the memory array to select a plurality of desired bit lines; a plurality of read signal lines connected to the column selector for receiving data signals from the selected bit lines; a sense amplifier circuit connected to the read signal lines for amplifying the data signals; an output buffer circuit for receiving output signals from the sense amplifier circuit; a plurality of output terminals connected to the output buffer circuit for outputting selected data signals; inspection means for selectively connecting the read signal lines and the output terminals in response to a first inspection signal; and means for connecting the read signal lines to each other in response to a second inspection signal, such that the signal at each of the output terminals is the same.

Claim 6

A memory device comprising: a memory array having a plurality of rows of word lines, a plurality of columns of bit lines, and a memory cell arranged at each intersection of a word line and a bit line; a plurality of word selection input lines connected to the memory array for applying a word selection input signal to the memory array to select a respective word line; a column selector connected to the memory array for applying a column selection input signal to the memory array to select a plurality of desired bit lines; a plurality of read signal lines connected to the column selector for receiving data signals from the selected bit lines; a sense amplifier circuit connected to the read signal lines for amplifying the data signals; an output buffer circuit for receiving output signals from the sense amplifier circuit; a plurality of output terminals connected to the output buffer circuit for outputting selected data signals; inspection means for selectively connecting the read signal lines and the output terminals in response to a first inspection signal; and means for connecting the read signal lines to each other in response to a second inspection signal, such that the signal at each of the output terminals is the same.

Claim 7

A memory device according to claim 3; wherein the inspection means includes means for disabling the sense amplifier circuit and the output buffer circuit in response to the first inspection signal.

Claim 8

A memory device according to claim 3; wherein the respective memory cells comprise nonvolatile memory cells.

Claim 9

A memory device according to claim 3; wherein the respective memory cells each comprise a selection transistor and a nonvolatile memory cell transistor.

Claim 10

A memory device according to claim 3; wherein each of the plurality of word selection input lines is connected to a respective one of the word lines of the memory array.

Claim 11

A memory device according to claim 3; wherein the means for connecting the read signal lines to each other comprises a plurality of parallel transistors connected to the read signal lines, and an input terminal for applying the second inspection signal to activate the plurality of transistors such that the read signal lines become short-circuited to each other during application of the second inspection signal.

Claim 12

A memory device comprising: a memory array having a plurality of rows of word lines, a plurality of columns of bit lines, and a memory cell arranged at each intersection of a word line and a bit line; a plurality of word selection input lines connected to the memory array for applying a word selection input signal to the memory array to select a respective word line; a column selector connected to the memory array for applying a column selection input signal to the memory array to select a plurality of desired bit lines; a plurality of read signal lines connected to the column selector for receiving data signals from the selected bit lines; a sense amplifier circuit connected to the read signal lines for amplifying the data signals; an output buffer circuit for receiving output signals from the sense amplifier circuit; a plurality of output terminals connected to the output buffer circuit for outputting data signals; a logic circuit connected to outputs of the sense amplifier circuit; and a signal selection circuit connected to outputs of the sense amplifier circuit and the logic circuit for selectively outputting to an output terminal one of an output signal of the logic circuit and an output signal of the sense amplifier circuit.

Claim 13

A memory device comprising: a memory array having a plurality of rows of word lines, a plurality of columns of bit lines, and a memory cell arranged at each intersection of a word line and a bit line; a plurality of word selection input lines connected to the memory array for applying a word selection input signal to the memory array to select a respective word line; a column selector connected to the memory array for applying a column selection input signal to the memory array to select a plurality of desired bit lines; a plurality of read signal lines connected to the column selector for receiving data signals from the selected bit lines; a sense amplifier circuit connected to the read signal lines for amplifying the data signals; an output buffer circuit for receiving output signals from the sense amplifier circuit; a plurality of output terminals connected to the output buffer circuit for outputting data signals; a logic circuit connected to outputs of the sense amplifier circuit; and a signal selection circuit connected to outputs of the sense amplifier circuit and the logic circuit for selectively outputting to an output terminal one of an output signal of the logic circuit and an output signal of the sense amplifier circuit.

Claim 14

A memory device according to claim 9; wherein the logic circuit comprises an OR gate having inputs connected to the outputs of the sense amplifier circuit and an AND gate having inputs connected to the outputs of the sense amplifier circuit such that the OR gate outputs a logic "0" level when all the outputs of the sense amplifier are at a logic "0" level and the AND gate outputs a logic "1" level when all outputs of the sense amplifier circuit are at a logic "1" level.