US5612645A
Expired / Lapsed
US
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Dynamic MOSFET threshold voltage controller
Assignee: Oracle America Inc
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Filing: 1995-12-01
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Granted: 1997-03-18
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Expires: 2015-12-01
Abstract
Abstract A threshold voltage controller circuit for controlling the threshold voltage of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated within an integrated circuit includes a test circuit, a clocked voltage comparator and voltage ramp generator. The test circuit simulates a critical signal path within the integrated circuit by receiving a first clock signal and providing in response thereto a corresponding delayed version of such clock signal. The clocked voltage comparator compares the voltage of the delayed clock signal output from the test circuit with a reference voltage and, in response to a second clock signal which is delayed with respect to the first clock signal, asserts a binary output signal high or low if the clock delay introduced by the test circuit is higher or lower, respectively, than desired. The voltage ramp generator, in response to the binary output signal from the clocked voltage comparator, generates an increasing or decreasing voltage ramp which is applied to the semiconductor substrate and well of the integrated circuit for increasing or decreasing the back bias thereto, thereby increasing or decreasing the threshold voltages of the CMOSFETs, respectively.
Inventors
- 👤 Sameer D. Halepete
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:39
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
231 words
An apparatus including a threshold voltage controller circuit for controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated within an integrated circuit, said threshold voltage controller circuit comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type disposed within said first semiconductor region; a test circuit for receiving a first clock signal and in response thereto providing a corresponding delayed clock signal, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith and disposed within said second semiconductor region, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; a comparison circuit for receiving a reference voltage, said delayed clock signal from said test circuit and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and a controller for receiving said comparison result signal from said comparison circuit and in accordance therewith applying a control voltage across said first and second semiconductor regions for controlling said threshold voltage.
Claim 2
Independent Claim
231 words
An apparatus including a threshold voltage controller circuit for controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated within an integrated circuit, said threshold voltage controller circuit comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type disposed within said first semiconductor region; a test circuit for receiving a first clock signal and in response thereto providing a corresponding delayed clock signal, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith and disposed within said second semiconductor region, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; a comparison circuit for receiving a reference voltage, said delayed clock signal from said test circuit and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and a controller for receiving said comparison result signal from said comparison circuit and in accordance therewith applying a control voltage across said first and second semiconductor regions for controlling said threshold voltage.
Claim 3
Dependent Claim
23 words
The apparatus of claim 1, wherein said first semiconductor region comprises a semiconductor substrate and said second semiconductor region comprises a semiconductor well.
Claim 4
Dependent Claim
24 words
The apparatus of claim 1, wherein said test circuit simulates a signal propagation delay through a circuit path within said threshold voltage controller circuit.
Claim 5
Dependent Claim
13 words
The apparatus of claim 1, wherein said comparison circuit comprises a clocked comparator.
Claim 6
Dependent Claim
13 words
The apparatus of claim 1, wherein said controller comprises a voltage ramp generator.
Claim 7
Dependent Claim
27 words
The apparatus of claim 1, further comprising a clock signal source for providing said first and second clock signals, wherein said clock delay time period is selectable.
Claim 8
Dependent Claim
19 words
The apparatus of claim 1, further comprising an integrated circuit into which said threshold voltage controller circuit is integrated.
Claim 9
Dependent Claim
18 words
The apparatus of claim 1, further comprising a computer into which said threshold voltage controller circuit is incorporated.
Claim 10
Independent Claim
240 words
A method of providing an apparatus including a threshold voltage controller circuit for controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated within an integrated circuit, said method comprising the steps of: providing a first semiconductor region of a first conductivity type; providing a second semiconductor region of a second conductivity type disposed within said first semiconductor region; providing a test circuit for receiving a first clock signal and in response thereto providing a corresponding delayed clock signal, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith and disposed within said second semiconductor region, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; providing a comparison circuit for receiving a reference voltage, said delayed clock signal from said test circuit and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and providing a controller for receiving said comparison result signal from said comparison circuit and in accordance therewith applying a control voltage across said first and second semiconductor regions for controlling said threshold voltage.
Claim 11
Independent Claim
240 words
A method of providing an apparatus including a threshold voltage controller circuit for controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated within an integrated circuit, said method comprising the steps of: providing a first semiconductor region of a first conductivity type; providing a second semiconductor region of a second conductivity type disposed within said first semiconductor region; providing a test circuit for receiving a first clock signal and in response thereto providing a corresponding delayed clock signal, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith and disposed within said second semiconductor region, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; providing a comparison circuit for receiving a reference voltage, said delayed clock signal from said test circuit and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and providing a controller for receiving said comparison result signal from said comparison circuit and in accordance therewith applying a control voltage across said first and second semiconductor regions for controlling said threshold voltage.
Claim 12
Dependent Claim
33 words
The method of claim 9, wherein said step of providing a first semiconductor region comprises providing a semiconductor substrate and said step of providing a second semiconductor region comprises providing a semiconductor well.
Claim 13
Dependent Claim
34 words
The method of claim 9, wherein said step of providing a test circuit comprises providing a simulation circuit which simulates a signal propagation delay through a circuit path within said threshold voltage controller circuit.
Claim 14
Dependent Claim
18 words
The method of claim 9, wherein said step of providing a comparison circuit comprises providing a clocked comparator.
Claim 15
Dependent Claim
18 words
The method of claim 9, wherein said step of providing a controller comprises providing a voltage ramp generator.
Claim 16
Dependent Claim
31 words
The method of claim 9, further comprising the step of providing a clock signal source for providing said first and second clock signals, wherein said clock delay time period is selectable.
Claim 17
Dependent Claim
23 words
The method of claim 9, further comprising the step of providing an integrated circuit into which said threshold voltage controller circuit is integrated.
Claim 18
Dependent Claim
22 words
The method of claim 9, further comprising the step of providing a computer into which said threshold voltage controller circuit is incorporated.
Claim 19
Independent Claim
210 words
A method of controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated in an integrated circuit, said method comprising the steps of: receiving a first clock signal and in response thereto providing a corresponding delayed clock signal with a test circuit, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; receiving a reference voltage, said delayed clock signal and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and receiving said comparison result signal and in accordance therewith applying a control voltage across a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed within said first semiconductor region for controlling said threshold voltage wherein said plurality of CMOSFETs is disposed within said second semiconductor region.
Claim 20
Independent Claim
210 words
A method of controlling the threshold voltage of a plurality of complementary metal oxide semiconductor field effect transistors (CMOSFETs) integrated in an integrated circuit, said method comprising the steps of: receiving a first clock signal and in response thereto providing a corresponding delayed clock signal with a test circuit, wherein said test circuit includes a plurality of CMOSFETs having a threshold voltage associated therewith, and wherein said delayed clock signal is delayed with respect to said first clock signal by a response time period the duration of which is dependent upon said threshold voltage; receiving a reference voltage, said delayed clock signal and a second clock signal, comparing said reference voltage and said delayed clock signal and, in accordance therewith and in response to said second clock signal, providing a comparison result signal, wherein said second clock signal is delayed with respect to said first clock signal by a clock delay time period; and receiving said comparison result signal and in accordance therewith applying a control voltage across a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed within said first semiconductor region for controlling said threshold voltage wherein said plurality of CMOSFETs is disposed within said second semiconductor region.
Claim 21
Dependent Claim
43 words
The method of claim 17, wherein said step of receiving a first clock signal and in response thereto providing a corresponding delayed clock signal with a test circuit is for simulating a signal propagation delay through a circuit path within said integrated circuit.
Claim 22
Dependent Claim
64 words
The method of claim 17, wherein said step of receiving said comparison result signal and in accordance therewith applying a control voltage across a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed within said first semiconductor region for controlling said threshold voltage comprises generating and applying a voltage ramp as said control voltage.
Claim 23
Dependent Claim
67 words
The method of claim 17, wherein said step of receiving said comparison result signal and in accordance therewith applying a control voltage across a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type disposed within said first semiconductor region for controlling said threshold voltage comprises applying said control voltage across a semiconductor substrate and a semiconductor well, respectively.
Claim 24
Dependent Claim
25 words
The method of claim 17, further comprising the step of generating said first and second clock signals, wherein said clock delay time period is selectable.
Claim 25
Dependent Claim
18 words
The method of claim 17, further comprising the step of performing the recited steps within an integrated circuit.
Claim 26
Dependent Claim
17 words
The method of claim 17, further comprising the step of performing the recited steps within a computer.
References Cited (Backward Citations)
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