Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique

Claim 2

A spin valve type magnetoresistive sensor incorporating active and pinned ferromagnetic layers separated by a nonmagnetic spacer layer formed on a substrate, wherein the improvement in combination comprises: a pinning layer overlying said substrate, said pinning layer underlying said pinned ferromagnetic layer; said spacer and active ferromagnetic layers comprising a mesa structure overlying said pinned ferromagnetic layer and having tapered opposing sides thereof; and a separation layer overlying said pinned ferromagnetic layer and said tapered opposing sides of said mesa structure, said separation layer also overlying a predetermined portion of an upper surface of said active ferromagnetic layer adjoining said tapered opposing sides.

Claim 3

The spin valve type magnetoresistive sensor of claim 1 further comprising: an underlayer formed on said substrate and interposed between said substrate and said pinning layer.

Claim 4

The spin valve type magnetoresistive sensor of claim 2 wherein said underlayer is selected from a group consisting of (Ta or oxides of Al or Si).

Claim 5

The spin valve type magnetoresistive sensor of claim 2 further comprising a buffer layer interposed between said underlayer and said pinning layer.

Claim 6

The spin valve type magnetoresistive sensor of claim 4 wherein said buffer layer is selected from a group consisting of (Cu or NiCr).

Claim 7

The spin valve type magnetoresistive sensor of claim 5 wherein said buffer layer is substantially between 50-300 Å thick.

Claim 8

The spin valve type magnetoresistive sensor of claim 4 wherein said buffer layer comprises Cr.

Claim 9

The spin valve type magnetoresistive sensor of claim 7 wherein said buffer layer is substantially between 50-100 Å thick.

Claim 10

The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers comprise a transition metal.

Claim 11

The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers are substantially between 20-200 Å thick.

Claim 12

The spin valve type magnetoresistive sensor of claim 10 wherein said active and pinned ferromagnetic layers are substantially 100 Å thick.

Claim 13

The spin valve type magnetoresistive sensor of claim 1 wherein said non-magnetic spacer layer comprises a noble metal.

Claim 14

The spin valve type magnetoresistive sensor of claim 1 wherein said non-magnetic spacer layer is substantially between 10-50 Å thick.

Claim 15

The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises an exchange coupled antiferromagnet.

Claim 16

The spin valve type magnetoresistive sensor of claim 14 wherein said exchange coupled antiferromagnet is selected from a group consisting of (FeMN, NiMn or NiCoO).

Claim 17

The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises a permanent magnet layer.

Claim 18

The spin valve type magnetoresistive sensor of claim 16 wherein said permanent magnet layer is selected from a group consisting of (Cr and its alloys).

Claim 19

The spin valve type magnetoresistive sensor of claim 16 wherein said permanent magnet layer is substantially between 50-500 Å thick.

Claim 20

The spin valve type magnetoresistive sensor of claim 1 wherein said tapered opposing sides form an acute angle with respect to a plane of said pinned ferromagnetic layer.

Claim 21

The spin valve type magnetoresistive sensor of claim 19 wherein said acute angle is substantially 45°.

Claim 22

The spin valve type magnetoresistive sensor of claim 1 wherein said separation layer comprises Cr.

Claim 23

The spin valve type magnetoresistive sensor of claim 21 wherein said separation layer is substantially 50 Å thick.

Claim 24

The spin valve type magnetoresistive sensor of claim 1 further comprising: a permanent magnet layer overlying said separation layer.

Claim 25

The spin valve type magnetoresistive sensor of claim 23 further comprising: a conductor layer overlying at least a portion of said permanent magnet layer.

Claim 26

The spin valve type magnetoresistive sensor of claim 24 further comprising: a capping layer overlying said conductor, permanent magnet and active ferromagnetic layers.

Claim 27

The spin valve type magnetoresistive sensor of claim 25 wherein said capping layer comprises Ta.

Claim 28

The spin valve type magnetoresistive sensor of claim 26 further comprising: a gap layer overlying said capping layer.

Claim 29

The spin valve type magnetoresistive sensor of claim 27 wherein said gap layer is selected from a group consisting of (oxides of Al or Si).

Claim 30

The spin valve type magnetoresistive sensor of claim 1 further comprising: an additional separation layer interposed between said pinning layer and said pinned ferromagnetic layer.

Claim 31

The spin valve type magnetoresistive sensor of claim 29 wherein said additional separation layer is selected from a group consisting of (Cr or Ta).

Claim 32

The spin valve type magnetoresistive sensor of claim 29 wherein said additional separation layer is substantially between 10-100 Å thick.

Claim 33

A magnetoresistive device comprising: a substrate; a pinning layer overlying said substrate; a first ferromagnetic layer overlying said pinning layer; a spacer layer overlying a first selected portion of said first ferromagnetic layer, said spacer layer presenting a first mesa structure having tapered opposing first and second sides thereof; a second ferromagnetic layer overlying said first mesa structure of said spacer layer, said second ferromagnetic layer presenting a second mesa structure having tapered opposing first and second sides thereof; first and second separation layer portions overlying said first ferromagnetic layer and said first and second mesa structures at said first and second sides thereof, said first and second separation layer portions also overlying a preselected portion of an upper surface of said second ferromagnetic layer adjoining said first and second sides thereof; first and second permanent magnet layer portions overlying said first and second separation layer portions; first and second conductor layer portions overlying a selected portion of said first and second permanent magnet layer portions respectively; and a capping layer overlying said first and second conductor layer portions, said first and second permanent magnet layer portions and said upper surface of said second mesa not overlain by said permanent magnet layer portions.

Claim 34

A magnetoresistive device comprising: a substrate; a pinning layer overlying said substrate; a first ferromagnetic layer overlying said pinning layer; a spacer layer overlying a first selected portion of said first ferromagnetic layer, said spacer layer presenting a first mesa structure having tapered opposing first and second sides thereof; a second ferromagnetic layer overlying said first mesa structure of said spacer layer, said second ferromagnetic layer presenting a second mesa structure having tapered opposing first and second sides thereof; first and second separation layer portions overlying said first ferromagnetic layer and said first and second mesa structures at said first and second sides thereof, said first and second separation layer portions also overlying a preselected portion of an upper surface of said second ferromagnetic layer adjoining said first and second sides thereof; first and second permanent magnet layer portions overlying said first and second separation layer portions; first and second conductor layer portions overlying a selected portion of said first and second permanent magnet layer portions respectively; and a capping layer overlying said first and second conductor layer portions, said first and second permanent magnet layer portions and said upper surface of said second mesa not overlain by said permanent magnet layer portions.

Claim 35

The magnetoresistive device of claim 32 further comprising: an underlayer interposed between said substrate and said pinning layer.

Claim 36

The magnetoresistive device of claim 33 wherein said underlayer comprises Ta.

Claim 37

The magnetoresistive device of claim 32 wherein said substrate is selected from a group consisting of (Si, Al 2 O 3 -TiC or glass).

Claim 38

The magnetoresistive device of claim 32 wherein said pinning layer comprises an antiferromagnetic material selected from a group consisting of (FeMn, NiMn or NiCoO).

Claim 39

The magnetoresistive device of claim 32 wherein said pinning layer comprises a permanent magnet layer.

Claim 40

The magnetoresistive device of claim 37 wherein said permanent magnet layer is selected from a group consisting of (Co and its alloys).

Claim 41

The magnetoresistive device of claim 37 wherein said permanent magnet layer is substantially between 50-500 Å thick.

Claim 42

The magnetoresistive device of claim 32 wherein said first and second ferromagnetic layers comprise a material selected from a group consisting of (transition metals or alloys).

Claim 43

The magnetoresistive device of claim 32 wherein said spacer layer is selected from a group consisting of (Cu, Ag, Au or Pd).

Claim 44

The magnetoresistive device of claim 32 wherein said first and second separation layer portions comprise a nonmagnetic material.

Claim 45

The magnetoresistive device of claim 42 wherein said nonmagnetic material comprises Cr.

Claim 46

The magnetoresistive device of claim 42 wherein said first and second separation layer portions are substantially 50 Å thick.

Claim 47

The magnetoresistive device of claim 32 wherein said first and second permanent magnet layer portions are selected from a group consisting of (Co or its alloys).

Claim 48

The magnetoresistive device of claim 32 wherein said first and second conductor layer portions are selected from a group consisting of (Cu, Ag or Au).

Claim 49

The magnetoresistive device of claim 32 wherein said capping layer comprises Ta.

Claim 50

The magnetoresistive device of claim 33 wherein said tapered opposing first and second sides of said first and second mesa structures are substantially coplanar.

Claim 51

The magnetoresistive device of claim 32 wherein said tapered opposing first and second sides of said first and second mesa structures form a substantially acute angle with respect to a plane of said substrate.

Claim 52

The magnetoresistive device of claim 49 wherein said acute angle is substantially 45°.

Claim 53

The magnetoresistive device of claim 32 wherein a distance between said first and second permanent magnet layer portions defines an active area of said magnetoresistive device.