US5608231A
Expired / Lapsed
US
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Field effect transistor having channel with plural quantum boxes arranged in a common plane
Assignee: Sony Corp
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Filing: 1996-07-18
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Granted: 1997-03-04
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Expires: 2016-07-18
Abstract
Abstract A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.
Inventors
- 👤 Ryuichi Ugajin
- 👤 Toshiyuki Sameshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:35
CPC Classifications
H; H10; H10D; H10D30/00; B; B82; B82Y; B82Y10/00; H10D62/00; H10D62/80; H10D62/81; H10D62/812; H10D62/814
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
48 words
A field effect transistor wherein a plurality of quantum boxes arranged adjacent to each other on a common plane are provided in a channel region, each of said quantum boxes comprising completely isolated volumes of one material completely surrounded at all sides by at least one different material.
Claim 2
Dependent Claim
48 words
A field effect transistor wherein a plurality of quantum boxes arranged adjacent to each other on a common plane are provided in a channel region, each of said quantum boxes comprising completely isolated volumes of one material completely surrounded at all sides by at least one different material.
Claim 3
Dependent Claim
20 words
The field effect transistor according to claim 1 wherein a gate electrode is provided on said plurality of quantum boxes.
Claim 4
Dependent Claim
21 words
The field effect transistor according to claim 1 wherein each of said quantum boxes is made of heterojunction of compound semiconductors.
Claim 5
Dependent Claim
22 words
The field effect transistor according to claim 3 wherein said heterojunction of compound semiconductors is one of AlGaAs/GaAs heterojunction and AlAs/GaAs heterojunction.
Claim 6
Dependent Claim
19 words
The field effect transistor according to claim 1 wherein an electron supplying layer is provided above said channel region.
Claim 7
Dependent Claim
24 words
The field effect transistor according to claim 1 wherein each of said quantum boxes is made of junction of a semiconductor and an insulator.
Claim 8
Dependent Claim
29 words
The field effect transistor according to claim 6 wherein said semiconductor comprises a group IV element, and said insulator comprises a compound of a group IV element and oxygen.
Claim 9
Dependent Claim
20 words
The field effect transistor according to claim 6 wherein said semiconductor is Si, and said insulator is SiO 2 .
References Cited (Backward Citations)
US5032877A
Cited
US5198879A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-03-03 | 2000-09-02 | 2001-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-03 | 2004-09-02 | 2005-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-03 | 2008-09-02 | 2009-03-04 | $7700.00 | Window Closed / Lapsed |