US5602720A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mounting structure for semiconductor device having low thermal resistance
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-06-23
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Granted: 1997-02-11
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Expires: 2014-06-23
Abstract
Abstract A structure for mounting a semiconductor device includes a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK on one surface of which the semiconductor device is mounted, a heat sink joined to another surface of the ceramic plate formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK, and a base member formed of a metal or an alloy having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted.
Inventors
- 👤 Masuhiro Natsuhara
- 👤 Harutoshi Ukegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:15
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
122 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; a heat sink joined to another surface of the ceramic plate, said heat sink formed of a copper or a copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of a copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted, wherein the heat sink has a thermal conductivity which is higher than the thermal conductivities of the ceramic plate and the base member.
Claim 2
Dependent Claim
122 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; a heat sink joined to another surface of the ceramic plate, said heat sink formed of a copper or a copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of a copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted, wherein the heat sink has a thermal conductivity which is higher than the thermal conductivities of the ceramic plate and the base member.
Claim 3
Dependent Claim
54 words
A structure as claimed in claim 1, wherein the mounting structure further comprises a second heat sink formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK and joined to the surface of the ceramic plate which is designed to mount the semiconductor device.
Claim 4
Dependent Claim
32 words
A structure as claimed in claim 2, wherein the second heat sink covers the surface of the ceramic plate excluding a portion at which the semiconductor device is designed to mount upon.
Claim 5
Dependent Claim
16 words
A structure as claimed in claim 2, wherein the second heat sink forms an electric circuit.
Claim 6
Dependent Claim
18 words
A structure as claimed in claim 1, wherein the ceramic plate is formed of aluminium nitride or beryllia.
Claim 7
Dependent Claim
29 words
A structure as claimed in claim 1, wherein the copper based alloy of the base member is a metal selected from the group consisting of copper, copper-tungsten and copper-molybdenum.
Claim 8
Dependent Claim
113 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; and a base member formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK and having a thick portion on which the ceramic plate is mounted, wherein the base member has a thermal conductivity which is higher than the thermal conductivity of the ceramic plate and a difference in thickness between the thick portion and another portion of the base member is larger than a thickness of the ceramic plate.
Claim 9
Dependent Claim
113 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; and a base member formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK and having a thick portion on which the ceramic plate is mounted, wherein the base member has a thermal conductivity which is higher than the thermal conductivity of the ceramic plate and a difference in thickness between the thick portion and another portion of the base member is larger than a thickness of the ceramic plate.
Claim 10
Dependent Claim
122 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; a heat sink joined to the surface of the ceramic plate, said heat sink being formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of a copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the ceramic plate is mounted, wherein the heat sink has a thermal conductivity which is higher than the thermal conductivities of the ceramic plate and the base member.
Claim 11
Dependent Claim
122 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK, one surface of which is designed to mount the semiconductor device; a heat sink joined to the surface of the ceramic plate, said heat sink being formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of a copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the ceramic plate is mounted, wherein the heat sink has a thermal conductivity which is higher than the thermal conductivities of the ceramic plate and the base member.
Claim 12
Dependent Claim
108 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK; a heat sink joined to an upper surface of the ceramic plate, said heat sink formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the ceramic plate is mounted, wherein the heat sink has a thermal conductivity higher than the thermal conductivities of the ceramic plate and the base member.
Claim 13
Dependent Claim
108 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK; a heat sink joined to an upper surface of the ceramic plate, said heat sink formed of a copper or copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK; and a base member formed of copper or a copper based alloy having a thermal conductivity equal to or higher than 100 W/mK on which the ceramic plate is mounted, wherein the heat sink has a thermal conductivity higher than the thermal conductivities of the ceramic plate and the base member.
Claim 14
Dependent Claim
136 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK; a first heat sink joined to an upper surface of the ceramic plate; a second heat sink joined to a lower surface of the ceramic plate; and a base member formed of copper or a copper based alloy and having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted, wherein the first and second heat sinks are respectively formed of a copper or a copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK and higher than the thermal conductivities of the ceramic plate, and wherein the base member and the second heat sink are each thicker than the ceramic plate.
Claim 15
Dependent Claim
136 words
A structure for mounting a semiconductor device comprising: a ceramic plate having a thermal conductivity equal to or higher than 120 W/mK; a first heat sink joined to an upper surface of the ceramic plate; a second heat sink joined to a lower surface of the ceramic plate; and a base member formed of copper or a copper based alloy and having a thermal conductivity equal to or higher than 100 W/mK on which the heat sink is mounted, wherein the first and second heat sinks are respectively formed of a copper or a copper based alloy plate having a thermal conductivity equal to or higher than 300 W/mK and higher than the thermal conductivities of the ceramic plate, and wherein the base member and the second heat sink are each thicker than the ceramic plate.
Claim 16
Dependent Claim
17 words
A structure as claimed in claim 1, wherein the heat sink is thicker than the ceraic plate.
References Cited (Backward Citations)
US3439255A
Cited
US4788627A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-11 | 2000-08-12 | 2001-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-11 | 2004-08-12 | 2005-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-11 | 2008-08-12 | 2009-02-11 | $7700.00 | Window Closed / Lapsed |