US5600177A
Expired / Lapsed
US
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Semiconductor device having an electrically conductive layer including a polycrystalline layer containing an impurity and a metallic silicide layer
Assignee: NEC Electronics Corp
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Filing: 1994-12-19
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Granted: 1997-02-04
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Expires: 2014-12-19
Abstract
Abstract The upper and lateral surfaces of a polycide electrode comprising a P + -type polycrystalline silicon layer 6 and a tungsten silicide layer 13 are covered with silicon nitride films 9, 9A. Reduction of the boron concentration at the interface between the lower polycrystalline silicon layer and the upper tungsten silicide layer is suppressed.
Inventors
- 👤 Toru Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:08
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
115 words
Semiconductor device having an electrically conductive layer comprising a polycrystalline silicon layer containing an impurity and a metallic silicide layer which are sequentially formed on a semiconductor substrate, and a silicon nitride film covering upper and lateral surfaces of said electrically conductive layer, said metallic silicide layer having an upper surface, a lower surface and a lateral surface, said polycrystalline silicon layer having a lateral surface and an upper surface in contact with said lower surface of said metallic silicide layer, wherein said upper surface of said metallic silicide layer, said lateral surface of said metallic silicide layer and said lateral surface of said polycrystalline silicon layer are in contact with said silicon nitride film.
Claim 2
Dependent Claim
115 words
Semiconductor device having an electrically conductive layer comprising a polycrystalline silicon layer containing an impurity and a metallic silicide layer which are sequentially formed on a semiconductor substrate, and a silicon nitride film covering upper and lateral surfaces of said electrically conductive layer, said metallic silicide layer having an upper surface, a lower surface and a lateral surface, said polycrystalline silicon layer having a lateral surface and an upper surface in contact with said lower surface of said metallic silicide layer, wherein said upper surface of said metallic silicide layer, said lateral surface of said metallic silicide layer and said lateral surface of said polycrystalline silicon layer are in contact with said silicon nitride film.
Claim 3
Dependent Claim
24 words
Semiconductor device as set forth in claim 1, wherein said silicon nitride film contains a same impurity as that of said polycrystalline silicon layer.
Claim 4
Dependent Claim
24 words
Semiconductor device as set forth in claim 1, wherein said metallic silicide layer contains the same impurity as that of said polycrystalline silicon layer.
Claim 5
Dependent Claim
16 words
Semiconductor device as set forth in claim 1, wherein said semiconductor substrate is made of silicon.
Claim 6
Dependent Claim
13 words
Semiconductor device as set forth in claim 1, wherein said impurity is boron.
Claim 7
Dependent Claim
37 words
Semiconductor device as set forth in claim 1, wherein said metallic silicide layer is made of a material selected from the group consisting of tungsten silicide, molybdenum silicide, titanium silicide, cobalt silicide, platinum silicide and tantalum silicide.
Claim 8
Dependent Claim
22 words
Semiconductor device as set forth in claim 1, wherein said electrically conductive layer is a base lead electrode of a bipolar transistor.
Claim 9
Dependent Claim
120 words
Semiconductor device having an electrically conductive layer comprising a polycrystalline silicon layer containing an impurity and a metallic silicide layer which are sequentially formed on an insulating film formed on a semiconductor substrate, and a silicon nitride film covering upper and lateral surfaces of said electrically conductive layer, said metallic silicide layer having an upper surface, a lower surface and a lateral surface, said polycrystalline silicon layer having a lateral surface and an upper surface in contact with said lower surface of said metallic silicide layer, wherein said upper surface of said metallic silicide layer, said lateral surface of said metallic silicide layer and said lateral surface of said polycrystalline silicon layer are in contact with said silicon nitride film.
Claim 10
Dependent Claim
120 words
Semiconductor device having an electrically conductive layer comprising a polycrystalline silicon layer containing an impurity and a metallic silicide layer which are sequentially formed on an insulating film formed on a semiconductor substrate, and a silicon nitride film covering upper and lateral surfaces of said electrically conductive layer, said metallic silicide layer having an upper surface, a lower surface and a lateral surface, said polycrystalline silicon layer having a lateral surface and an upper surface in contact with said lower surface of said metallic silicide layer, wherein said upper surface of said metallic silicide layer, said lateral surface of said metallic silicide layer and said lateral surface of said polycrystalline silicon layer are in contact with said silicon nitride film.
Claim 11
Dependent Claim
24 words
Semiconductor device as set forth in claim 8, wherein said silicon nitride film contains a same impurity as that of said polycrystalline silicon layer.
Claim 12
Dependent Claim
24 words
Semiconductor device as set forth in claim 8, wherein said metallic silicide layer contains the same impurity as that of said polycrystalline silicon layer.
Claim 13
Dependent Claim
16 words
Semiconductor device as set forth in claim 8, wherein said semiconductor substrate is made of silicon.
Claim 14
Dependent Claim
17 words
Semiconductor device as set forth in claim 8, wherein said insulating film is made of silicon oxide.
Claim 15
Dependent Claim
13 words
Semiconductor device as set forth in claim 8, wherein said impurity is boron.
Claim 16
Dependent Claim
37 words
Semiconductor device as set forth in claim 8, wherein said metallic silicide layer is made of a material selected from the group consisting of tungsten silicide, molybdenum silicide, titanium silicide, cobalt silicide, platinum silicide, and tantalum silicide.
Claim 17
Dependent Claim
20 words
Semiconductor device as set forth in claim 8, wherein said electrically conductive layer is a gate electrode of a MOSFET.
References Cited (Backward Citations)
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