US5599731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a field oxide film in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1995-07-06
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Granted: 1997-02-04
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Expires: 2015-07-06
Abstract
Abstract The present invention discloses a method of forming a field oxide film in a semiconductor device which can minimize an occurrence of a birds beak by forming a pad polysilicon film between a nitride film and a pad oxide film, defining field regions by patterning the nitride film, and forming an oxidization prevention layer by implanting nitrogen atoms into portions where the bird's beak will otherwise occur.
Inventors
- 👤 Sang H. Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:16
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10P; H10P14/00; H10P14/60; H10P14/61
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
116 words
A method of forming a semiconductor device, comprising: sequentially forming a pad oxide film, a pad polysilicon film, and a nitride film on a silicon substrate; implanting impurity ions to form a channel stop region after patterning said nitride film to define a field region; exposing a selected portion of said exposed pad polysilicon by forming a photoresist pattern; forming an oxidation prevention area by implanting nitrogen ions into said selected portion of said pad polysilicon film exposed at an edge of said photoresist pattern; removing said photoresist pattern and subsequently performing a thermal oxidation process; and forming a field oxide film by removing said nitride film, said pad polysilicon film, and said pad oxide film.
Claim 2
Independent Claim
116 words
A method of forming a semiconductor device, comprising: sequentially forming a pad oxide film, a pad polysilicon film, and a nitride film on a silicon substrate; implanting impurity ions to form a channel stop region after patterning said nitride film to define a field region; exposing a selected portion of said exposed pad polysilicon by forming a photoresist pattern; forming an oxidation prevention area by implanting nitrogen ions into said selected portion of said pad polysilicon film exposed at an edge of said photoresist pattern; removing said photoresist pattern and subsequently performing a thermal oxidation process; and forming a field oxide film by removing said nitride film, said pad polysilicon film, and said pad oxide film.
Claim 3
Dependent Claim
26 words
The method as in claim 1, wherein said implanting comprises using NH 2 or NO gas to implant nitrogen ions to form said oxidation prevention area.
References Cited (Backward Citations)
JPS5791536A
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US4407696A
Cited
JPS6171646A
Cited
JPH01297837A
Cited
JPH05144805A
Cited
US5308787A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-04 | 2000-08-05 | 2001-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-04 | 2004-08-05 | 2005-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-04 | 2008-08-05 | 2009-02-04 | $7700.00 | Window Closed / Lapsed |