US5598368A
Expired / Lapsed
US
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Batch erasable nonvolatile memory device and erasing method
Assignee: Renesas Eastern Japan Semiconductor Inc
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Filing: 1995-05-19
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Granted: 1997-01-28
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Expires: 2015-05-19
Abstract
Abstract A batch erasable nonvolatile memory device and an apparatus using the same provided with memory cells which are adapted to execute an erase operation by a ejecting an electric charge accumulated at floating gates by program operation (including a pre-write operation), carries out, in sequence, a first operation for reading memory cells of an erase unit and carrying out a pre-write operation on those nonvolatile memory cells at the floating gates of which electric charge is not stored, a second operation for carrying out a batch erase operation at a high speed for the nonvolatile memory cells of said erase unit with a relatively large energy under a relatively large erase reference voltage, a third operation for carrying out a read operation of said all erased nonvolatile memory cells and a write operation on those nonvolatile memory cells which are adapted to have a relatively low threshold voltage, and a fourth operation for carrying out a batch erase operation at a low speed for the nonvolatile memory cells of said erase unit with a relatively small energy under a relatively small erase reference voltage, or is provided with an automatic erasing circuit for executing these operations.
Inventors
- 👤 Masahito Takahashi
- 👤 Michiko Odagiri
- 👤 Takeshi Furuno
- 👤 Kazunori Furusawa
- 👤 Masashi Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:22
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/3468; G11C16/3477; G11C16/10; G11C16/14; G11C16/16; G11C16/3404; G11C16/3409; G11C16/344; G11C16/3445
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
199 words
A nonvolatile memory device comprising: a plurality of memory cells which store information as values of a threshold voltage, wherein each of said plurality of memory cells has a floating gate; a command decoder decoding a command supplied; and a control circuit controlling a specified operation according to a result of decoding by said command decoder, wherein said control circuit controls execution of a first ejecting operation, an injecting operation and a second ejecting operation in accordance with a result of decoding of a command indicating a threshold voltage changing operation by said command decoder, said first ejecting operation ejecting electrons from the floating gates and setting a threshold voltage of said plurality of memory cells to be lower than a first voltage, said injecting operation injecting electrons into the floating gates to set the threshold voltage of the memory cells, which is determined higher than 0 V and lower than a second voltage, to be higher than said second voltage after said first ejecting operation, and said second ejecting operation ejecting electrons from the floating gates to set the threshold voltage of said plurality of memory cells to be higher than 0 V after said electron injecting operation.
Claim 2
Dependent Claim
199 words
A nonvolatile memory device comprising: a plurality of memory cells which store information as values of a threshold voltage, wherein each of said plurality of memory cells has a floating gate; a command decoder decoding a command supplied; and a control circuit controlling a specified operation according to a result of decoding by said command decoder, wherein said control circuit controls execution of a first ejecting operation, an injecting operation and a second ejecting operation in accordance with a result of decoding of a command indicating a threshold voltage changing operation by said command decoder, said first ejecting operation ejecting electrons from the floating gates and setting a threshold voltage of said plurality of memory cells to be lower than a first voltage, said injecting operation injecting electrons into the floating gates to set the threshold voltage of the memory cells, which is determined higher than 0 V and lower than a second voltage, to be higher than said second voltage after said first ejecting operation, and said second ejecting operation ejecting electrons from the floating gates to set the threshold voltage of said plurality of memory cells to be higher than 0 V after said electron injecting operation.
Claim 3
Dependent Claim
29 words
A nonvolatile memory device according to claim 1, further comprising a voltage generator circuit for generating said first and second voltages from a power supply voltage to be supplied.
Claim 4
Dependent Claim
40 words
A nonvolatile memory device according to claim 2, wherein a control gate of the memory cell has a plurality of word lines to be connected and said first and second voltages are selectively applied to said plurality of word lines.
Claim 5
Dependent Claim
40 words
A nonvolatile memory device according to claim 1, wherein each of said plurality of memory cells has a control gate under which said floating gate is formed and further a pair of semiconductor regions are formed under said floating gate.
Claim 6
Dependent Claim
86 words
A nonvolatile memory device according to claim 4, wherein a difference between an internal voltage to be applied to said control gate of the memory cell and an internal voltage to be applied to one of said pair of semiconductor areas in said first electing operation is larger than a difference between the internal voltage to be applied to said control gate of the memory cell and the internal voltage to be applied to one of said pair of semiconductor areas in said second ejecting operation.
Claim 7
Dependent Claim
18 words
A nonvolatile memory device according to claim 1, wherein said injecting operation is executed by using hot electrons.
Claim 8
Dependent Claim
33 words
A nonvolatile memory device according to claim 1, wherein said first ejecting operation, said injecting operation and said second ejecting operation are executed to erase data stored in said plurality of memory cells.
Claim 9
Dependent Claim
18 words
A nonvolatile memory device according to claim 5, wherein one of said semiconductor areas is a source area.
Claim 10
Dependent Claim
40 words
A nonvolatile memory device according to claim 8, wherein a voltage to be applied to the source area in said first ejecting operation is lower than a voltage to be applied to the source area in said second ejecting operation.
Claim 11
Independent Claim
149 words
A method for changing a threshold voltage of a plurality of memory cells by ejecting electrons injected into the floating gates of said plurality of memory cells respectively having a control gate, a floating gate and a pair of semiconductor regions, comprising the steps of: ejecting electrons from said floating gates to make a threshold voltage of said plurality of memory cells lower than a first voltage, in a first ejecting operation; injecting electrons into the floating gates to make the threshold voltage of those memory cells, whose threshold voltage is determined to be 0 V or over and lower than a second voltage, higher than said second voltage after said first ejecting operation in an injecting operation; and ejecting electrons from said floating gates to make the threshold voltage of said plurality of memory cells higher than 0 V after said injecting operation, in a second ejecting operation.
Claim 12
Independent Claim
149 words
A method for changing a threshold voltage of a plurality of memory cells by ejecting electrons injected into the floating gates of said plurality of memory cells respectively having a control gate, a floating gate and a pair of semiconductor regions, comprising the steps of: ejecting electrons from said floating gates to make a threshold voltage of said plurality of memory cells lower than a first voltage, in a first ejecting operation; injecting electrons into the floating gates to make the threshold voltage of those memory cells, whose threshold voltage is determined to be 0 V or over and lower than a second voltage, higher than said second voltage after said first ejecting operation in an injecting operation; and ejecting electrons from said floating gates to make the threshold voltage of said plurality of memory cells higher than 0 V after said injecting operation, in a second ejecting operation.
Claim 13
Dependent Claim
85 words
A method for changing a threshold voltage according to claim 10, wherein a difference between a voltage to be applied to said control gates of the memory cells and a voltage to be applied to one of said pair of semiconductor areas in said first ejecting operation is larger than a difference between a voltage to be applied to said control gates of the memory cells and a voltage to be applied to one of said pair of semiconductor areas in said second ejecting operation.
References Cited (Backward Citations)
US4903236A
Cited
US5181188A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |