Gas moisture sensor and method of producing same

Claim 1

A moisture sensor comprising a flat substrate with silicon dioxide film thereon, windows etched in the silicon dioxide film on each side of the substrate, a tape heater deposited on one of the faces of the substrate and the unetched portion of the film, a window etched into the face of the substrate below the tape heater, said tape heater having two faces and a moisture sensitive layer on both faces of the tape heater.

Claim 9

A method of producing a gas moisture sensor comprising: using a flat substrate of monocrystalline silicon, oxidizing a surface layer of the flat substrate to obtain an insulation film of silicon dioxide on the surface layer of said flat substrate, determining sections of identical size on opposite sides of said substrate, which are positioned symmetrically relative to each other and are designed for removal of said film of silicon dioxide therefrom, etching said film of silicon dioxide having said sections of identical size until all removal of silicon dioxide and attainment of two windows positioned symmetrically to each other on opposite sides of the flat substrate, forming a tape heater by disposing on one side of said flat substrate an electrically conducting material in the form of a tape having a first group of sections and terminals, the terminals being secured on said insulation film of silicon dioxide, and a second group of sections disposed in said etched window, applying an etcher from the other side of the flat substrate into said etched window in the silicon dioxide film and etching the monocrystalline silicon from the region located between said two windows in said silicon dioxide films to form a window in the flat substrate, applying a layer of moisture-sensitive material onto one side of said first group of sections of said tape heater, and applying a layer of moisture-sensitive material onto both sides of said second group of sections of said tape heater.

Claim 10

A method of producing a gas moisture sensor comprising: using a flat substrate of monocrystalline silicon, oxidizing a surface layer of the flat substrate to obtain an insulation film of silicon dioxide on the surface layer of said flat substrate, determining sections of identical size on opposite sides of said substrate, which are positioned symmetrically relative to each other and are designed for removal of said film of silicon dioxide therefrom, etching said film of silicon dioxide having said sections of identical size until all removal of silicon dioxide and attainment of two windows positioned symmetrically to each other on opposite sides of the flat substrate, forming a tape heater by disposing on one side of said flat substrate an electrically conducting material in the form of a tape having a first group of sections and terminals, the terminals being secured on said insulation film of silicon dioxide, and a second group of sections disposed in said etched window, applying an etcher from the other side of the flat substrate into said etched window in the silicon dioxide film and etching the monocrystalline silicon from the region located between said two windows in said silicon dioxide films to form a window in the flat substrate, applying a layer of moisture-sensitive material onto one side of said first group of sections of said tape heater, and applying a layer of moisture-sensitive material onto both sides of said second group of sections of said tape heater.