US5593915A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1994-09-06
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Granted: 1997-01-14
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Expires: 2014-09-06
Abstract
Abstract A method of manufacturing a semiconductor device includes the following steps. A silicon oxide film having a predetermined film thickness is formed on a smooth major surface of a first silicon substrate of a first conductivity type having a first region wherein a power transistor is to be formed. The major surface of the first silicon substrate is bonded to a smooth major surface of a second silicon substrate having one of the first conductivity type and a second conductivity type. The other surface of the second silicon substrate bonded to the first silicon substrate is polished to form a silicon layer having a predetermined film thickness and a second region wherein a transistor constituting a control circuit for driving the power transistor is to be formed. The silicon layer and the silicon oxide film are removed from a predetermined portion in the first region. The power transistor of a vertical type is formed on the silicon substrate in the first region wherein the silicon layer and the silicon oxide film are selectively removed. The transistor constituting the control circuit is formed on the silicon layer on the silicon oxide film in the second region.
Inventors
- 👤 Tsukasa Ohoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:29
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/201; H10P; H10P50/00; H10P50/73; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/011; H10W10/012; H10W10/014; H10W10/021; H10W10/13; H10W10/17; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
235 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film having a film thickness on a major surface of a first silicon substrate of a first conductivity type having a first region wherein a power transistor is to be formed; bonding said major surface of said first silicon substrate and a major surface of a second silicon substrate having a conductivity type opposite said first conductivity type; polishing the other surface of said second silicon substrate bonded to said first silicon substrate to form a silicon layer having a film thickness and a second region wherein a transistor constituting a control circuit for driving said power transistor is to be formed; removing said silicon layer and said silicon oxide film from a portion in the first region; forming said power transistor in the form of a vertical type on said silicon substrate in the first region, wherein said silicon layer and said silicon oxide film are removed; the step of forming said silicon oxide film further comprising the added steps of: making the silicon oxide film thickness in the first region on the major surface less thick than the film thickness of the silicon oxide in the second region on the other surface; and removing a projecting portion of a bird's beak formed at a boundary between said first and second regions by polishing to form a flat surface.
Claim 2
Independent Claim
235 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film having a film thickness on a major surface of a first silicon substrate of a first conductivity type having a first region wherein a power transistor is to be formed; bonding said major surface of said first silicon substrate and a major surface of a second silicon substrate having a conductivity type opposite said first conductivity type; polishing the other surface of said second silicon substrate bonded to said first silicon substrate to form a silicon layer having a film thickness and a second region wherein a transistor constituting a control circuit for driving said power transistor is to be formed; removing said silicon layer and said silicon oxide film from a portion in the first region; forming said power transistor in the form of a vertical type on said silicon substrate in the first region, wherein said silicon layer and said silicon oxide film are removed; the step of forming said silicon oxide film further comprising the added steps of: making the silicon oxide film thickness in the first region on the major surface less thick than the film thickness of the silicon oxide in the second region on the other surface; and removing a projecting portion of a bird's beak formed at a boundary between said first and second regions by polishing to form a flat surface.
Claim 3
Dependent Claim
188 words
A method according to claim 1, wherein the step of making the silicon oxide film thickness in the first region on the major surface less thick comprises the steps of: forming a first silicon oxide film on said major surface of said first silicon substrate; forming a silicon nitride film in the first region on said first silicon substrate; forming a second silicon oxide film in the second region on said first silicon substrate by a first oxidation method using said silicon nitride film as a mask; removing said first and second silicon oxide films from the second region by wet etching; forming a third silicon oxide film of a local oxidation of silicon type in the second region on said first silicon substrate by a second oxidation method using said silicon nitride film as a mask; after said step of forming said third silicon oxide film removing said silicon nitride film and said first silicon oxide film from the first region by wet etching; and forming a silicon oxide film as a gate oxide film in the first region on said first silicon substrate by thermal oxidation.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein a power MOSFET is formed in the first region, and a CMOS transistor is formed in the second region.
Claim 5
Independent Claim
285 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film having a film thickness on a major surface of a first silicon substrate of a first conductivity type having a first region wherein a power transistor is to be formed; bonding said major surface of said first silicon substrate and a major surface of a second silicon substrate having a conductivity type which is opposite said first conductivity type; polishing the other surface of said second silicon substrate bonded to said first silicon substrate to form a silicon layer having a layer thickness and a second region wherein a transistor constituting a control circuit for driving said power transistor is to be formed; removing said silicon layer from a portion in the first region and said silicon layer from an element isolation region which is to be formed at a portion in the second region to form an element isolation groove by removing said silicon layer from the element isolation region; removing said silicon oxide film from a portion in the first region; forming said power transistor in the form of a vertical type on said silicon substrate in the first region wherein said silicon layer and said silicon oxide film are removed; forming said transistor constituting said control circuit on said silicon layer on said silicon oxide film in the second region; and the step of forming said silicon oxide film further comprising the added steps of: making the silicon oxide film thinner in the first region than in the second region, and removing a projecting portion of a bird's beak formed at a boundary between the first and second regions by polishing to form a flat surface.
Claim 6
Independent Claim
285 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film having a film thickness on a major surface of a first silicon substrate of a first conductivity type having a first region wherein a power transistor is to be formed; bonding said major surface of said first silicon substrate and a major surface of a second silicon substrate having a conductivity type which is opposite said first conductivity type; polishing the other surface of said second silicon substrate bonded to said first silicon substrate to form a silicon layer having a layer thickness and a second region wherein a transistor constituting a control circuit for driving said power transistor is to be formed; removing said silicon layer from a portion in the first region and said silicon layer from an element isolation region which is to be formed at a portion in the second region to form an element isolation groove by removing said silicon layer from the element isolation region; removing said silicon oxide film from a portion in the first region; forming said power transistor in the form of a vertical type on said silicon substrate in the first region wherein said silicon layer and said silicon oxide film are removed; forming said transistor constituting said control circuit on said silicon layer on said silicon oxide film in the second region; and the step of forming said silicon oxide film further comprising the added steps of: making the silicon oxide film thinner in the first region than in the second region, and removing a projecting portion of a bird's beak formed at a boundary between the first and second regions by polishing to form a flat surface.
Claim 7
Dependent Claim
47 words
A method according to claim 4, wherein the step of forming said transistor constituting said control circuit comprises the step of forming a well region having said conductivity which is opposite to said first conductivity type in said silicon layer at the portion in the second region.
Claim 8
Dependent Claim
26 words
A method according to claim 4, wherein a power MOSFET is formed in the first region, and a CMOS transistor is formed in the second region.
Claim 9
Independent Claim
239 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first silicon oxide film on a major surface of a first silicon substrate of a first conductivity type wherein a power transistor is to be formed; bonding the major surface of said first silicon substrate and a first major surface of a second silicon substrate; polishing the other surface of said second silicon substrate bonded to said first silicon substrate in order to form a first silicon layer wherein a CMOS transistor constituting a control circuit for driving said power transistor is to be formed; forming a gate oxide film and a second silicon layer on said gate oxide film in a first region of said first silicon substrate, and a second silicon oxide film and a third silicon layer on said second silicon oxide film in a second region of said first silicon substrate by removing portions of said first silicon layer and a first silicon oxide film, said second region being adjacent to said first region, said second silicon oxide dielectrically isolating said transistor constituting the control circuit from said power transistor; forming said power transistor in the form of a vertical type in the first region, said power transistor having a gate electrode which comprises said gate oxide film and second silicon layer; and forming said CMOS transistor on said third silicon layer on said second silicon oxide film in the second region.
Claim 10
Independent Claim
239 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first silicon oxide film on a major surface of a first silicon substrate of a first conductivity type wherein a power transistor is to be formed; bonding the major surface of said first silicon substrate and a first major surface of a second silicon substrate; polishing the other surface of said second silicon substrate bonded to said first silicon substrate in order to form a first silicon layer wherein a CMOS transistor constituting a control circuit for driving said power transistor is to be formed; forming a gate oxide film and a second silicon layer on said gate oxide film in a first region of said first silicon substrate, and a second silicon oxide film and a third silicon layer on said second silicon oxide film in a second region of said first silicon substrate by removing portions of said first silicon layer and a first silicon oxide film, said second region being adjacent to said first region, said second silicon oxide dielectrically isolating said transistor constituting the control circuit from said power transistor; forming said power transistor in the form of a vertical type in the first region, said power transistor having a gate electrode which comprises said gate oxide film and second silicon layer; and forming said CMOS transistor on said third silicon layer on said second silicon oxide film in the second region.
Claim 11
Dependent Claim
73 words
A method according to claim 7, the step of forming said CMOS transistor comprising the further steps of: forming a well region having a conductivity type which is opposite to a conductivity type of said second silicon substrate in a portion of said first silicon layer in the second region of said first silicon substrate; and forming a field oxide film on an element isolation region between said well region and first substrate.
Claim 12
Dependent Claim
16 words
A method according to claim 7, wherein said second silicon substrate has said first conductivity type.
Claim 13
Dependent Claim
24 words
A method according to claim 7, wherein said second silicon substrate has said second conductivity type which is opposite to a first conductivity type.
Claim 14
Dependent Claim
15 words
A method according to claim 7, wherein said power transistor is a power MOSFET transistor.
References Cited (Backward Citations)
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