US5587612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having semiconductor active and dummy regions with the dummy regions lower in height than the active regions
Assignee: NEC Corp
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Filing: 1995-09-11
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Granted: 1996-12-24
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Expires: 2015-09-11
Abstract
Abstract Disclosed is a semiconductor device in which dummy regions which are lower than an isolated element region are formed around the isolated element region. Another dummy region which has a height nearly equal to those of element regions may be formed at a non-element-region-existing region, accompanying with lower dummy regions. The method for making the semiconductor device has the steps of suitably forming the element regions and dummy regions on a insulating layer on a substrate, depositing a insulator on the entire surface of the insulating layer and polishing the insulator to obtain a plane surface.
Inventors
- 👤 Mitsuhiro Sugiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:07
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10D86/00; H10D86/01; H10D86/201
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
94 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; a plurality of island semiconductor regions which are formed on said insulating layer and are isolated from each other by an insulator, each of said plurality of island semiconductor regions forming a semiconductor element therein; and a dummy semiconductor region which is formed on said insulating layer and is buried in said insulator, wherein said dummy semiconductor region is adjacent to at least one of said plurality of island semiconductor regions and is lower than said plurality of island semiconductor regions.
Claim 2
Dependent Claim
94 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; a plurality of island semiconductor regions which are formed on said insulating layer and are isolated from each other by an insulator, each of said plurality of island semiconductor regions forming a semiconductor element therein; and a dummy semiconductor region which is formed on said insulating layer and is buried in said insulator, wherein said dummy semiconductor region is adjacent to at least one of said plurality of island semiconductor regions and is lower than said plurality of island semiconductor regions.
Claim 3
Dependent Claim
43 words
A semiconductor device, according to claim 1, wherein: said at least one of said plurality of island semiconductor regions is isolated from the remaining island semiconductor regions by a distance greater than that between two adjacent regions of the remaining island semiconductor regions.
Claim 4
Dependent Claim
26 words
A semiconductor device, according to claim 1, wherein: said dummy semiconductor region is made of the same material that forms said plurality of island semiconductor regions.
Claim 5
Dependent Claim
124 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; a plurality of island semiconductor regions which are formed on said insulating layer and are isolated each other by an insulator, each of said plurality of island semiconductor regions forming a semiconductor element therein; and a first and a second dummy semiconductor regions which are formed on said insulating layer and are buried in said insulator, wherein said first dummy semiconductor region is distant from at least one of said plurality of island semiconductor regions and has a height nearly equal to said plurality of island semiconductor regions, and said second dummy semiconductor region is adjacent to said first dummy semiconductor region and is lower than said first dummy semiconductor region.
Claim 6
Dependent Claim
124 words
A semiconductor device, comprising: a substrate; an insulating layer formed on said substrate; a plurality of island semiconductor regions which are formed on said insulating layer and are isolated each other by an insulator, each of said plurality of island semiconductor regions forming a semiconductor element therein; and a first and a second dummy semiconductor regions which are formed on said insulating layer and are buried in said insulator, wherein said first dummy semiconductor region is distant from at least one of said plurality of island semiconductor regions and has a height nearly equal to said plurality of island semiconductor regions, and said second dummy semiconductor region is adjacent to said first dummy semiconductor region and is lower than said first dummy semiconductor region.
Claim 7
Dependent Claim
33 words
A semiconductor device, according to claim 4, wherein: said first dummy semiconductor region is formed at a non-element-region forming adjacent to at least one of said plurality of island semiconductor regions full stop.
Claim 8
Dependent Claim
29 words
A semiconductor device, according to claim 4, wherein: said first and second dummy semiconductor regions are made of the same material that forms said plurality of island semiconductor regions.
References Cited (Backward Citations)
No citation records indexed.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-24 | 2004-06-24 | 2004-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-24 | 2008-06-24 | 2008-12-24 | $7700.00 | Window Closed / Lapsed |