US5585734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for determining the resistance and carrier profile of a semiconductor element using a scanning proximity microscope
Assignee: Imec
•
Filing: 1994-11-28
•
Granted: 1996-12-17
•
Expires: 2014-11-28
Abstract
Abstract A method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, the conductors are placed either in contact with the top surface or one conductor is placed in contact with the top surface and the other conductor is in the form of a large ohmic contact applied to the bottom surface of the semiconductor element. In order to bring the contact resistance between the top conductor(s) and the element to, and hold it at, a predetermined value during measuring, the conductor(s) are held at a constant distance and/or under constant pressure relative to the semiconductor element by use of a scanning proximity microscope. The top conductor may have a boron implanted diamond tip. The carrier profile of the semiconductor element is determined from previously derived calibration curves.
Inventors
- 👤 Marc A. J. Meuris
- 👤 Wilfried B. M. Vandervorst
- 👤 Peter de Wolf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:51
CPC Classifications
G; G01; G01R; G01R27/00; G01R27/02; G01R27/20; G01R27/205; G01R31/00; G01R31/26; G01R31/2648; B; B82; B82Y; B82Y35/00; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/852; Y10S977/854
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
121 words
A method of measuring resistance or conductivity of a semiconductor element of a particular type having a top surface and a bottom surface, comprising the steps of: (a) placing at least a first conductor in contact with said top surface; (b) placing a second conductor in contact with the bottom surface; (c) adjusting the contact pressure between the first conductor and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (d) measuring resistance or conductivity between said first and second conductors after step (c); (e) changing the position of said first conductor; and (f) repeating step (d) while maintaining the contact pressure at the value achieved in step (c).
Claim 2
Independent Claim
121 words
A method of measuring resistance or conductivity of a semiconductor element of a particular type having a top surface and a bottom surface, comprising the steps of: (a) placing at least a first conductor in contact with said top surface; (b) placing a second conductor in contact with the bottom surface; (c) adjusting the contact pressure between the first conductor and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (d) measuring resistance or conductivity between said first and second conductors after step (c); (e) changing the position of said first conductor; and (f) repeating step (d) while maintaining the contact pressure at the value achieved in step (c).
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1, wherein the scanning proximity microscope is an AFM (Atomic Force Microscope).
Claim 4
Dependent Claim
18 words
A method as claimed in claim 1, wherein the scanning proximity microscope is an STM (Scanning Tunneling Microscope).
Claim 5
Dependent Claim
15 words
A method as claimed in claim 1, wherein the first conductor includes a diamond tip.
Claim 6
Dependent Claim
15 words
A method as claimed in claim 4, wherein the diamond tip is implanted with boron.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 5, wherein the diamond tip is coated with tungsten.
Claim 8
Dependent Claim
17 words
A method as claimed in claim 1, wherein the second conductor is fixed to the bottom surface.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 7, wherein the second conductor is fixed to the bottom surface by soldering.
Claim 10
Independent Claim
189 words
A method of determining the carrier profile of a semiconductor element having a top surface and a bottom surface which comprises: (a) measuring the resistance of a plurality of semiconductor samples having respective known resistivities; (b) deriving a relationship of resistance versus resistivity from step (a); (c) placing at least a first conductor in contact with the top surface of the semiconductor element whose profile is to be determined; (d) placing a second conductor in contact with the bottom surface of said semiconductor element; (e) adjusting the contact pressure between the first conductor and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (f) measuring resistance between said first and second conductors after step (e); (g) changing the position of said first conductor; (h) repeating step (d) while maintaining the contact pressure at the value achieved in step (c); (i) determining a resistivity profile for the semiconductor element from the resistance measurements made in step (f) and the relationship derived in step (b); and (j) determining a carrier profile for the semiconductor element from the resistivity profile.
Claim 11
Independent Claim
189 words
A method of determining the carrier profile of a semiconductor element having a top surface and a bottom surface which comprises: (a) measuring the resistance of a plurality of semiconductor samples having respective known resistivities; (b) deriving a relationship of resistance versus resistivity from step (a); (c) placing at least a first conductor in contact with the top surface of the semiconductor element whose profile is to be determined; (d) placing a second conductor in contact with the bottom surface of said semiconductor element; (e) adjusting the contact pressure between the first conductor and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (f) measuring resistance between said first and second conductors after step (e); (g) changing the position of said first conductor; (h) repeating step (d) while maintaining the contact pressure at the value achieved in step (c); (i) determining a resistivity profile for the semiconductor element from the resistance measurements made in step (f) and the relationship derived in step (b); and (j) determining a carrier profile for the semiconductor element from the resistivity profile.
Claim 12
Dependent Claim
104 words
A method as claimed in claim 9, wherein each sample has a top surface and a bottom surface and the resistance of each sample is measured in step (a) by: (a1) placing at least a third conductor in contact with the top surface of the sample; (a2) placing a fourth conductor in contact with the bottom surface of the sample; (a3) adjusting the contact pressure between the third conductor and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; and (a4) measuring resistance between said third and fourth conductors after step (a3).
Claim 13
Dependent Claim
25 words
A method as claimed in claim 10, wherein the scanning proximity microscope used in step (a3) and step (e) is an AFM (Atomic Force Microscope).
Claim 14
Dependent Claim
18 words
A method as claimed in claim 10, wherein the scanning proximity microscope is an STM (Scanning Tunneling Microscope).
Claim 15
Dependent Claim
15 words
A method as claimed in claim 10, wherein the first conductor includes a diamond tip.
Claim 16
Dependent Claim
19 words
A method as claimed in claim 13, wherein the diamond tip of the first conductor is implanted with boron.
Claim 17
Dependent Claim
19 words
A method as claimed in claim 14, wherein the diamond tip of the first conductor is coated with tungsten.
Claim 18
Dependent Claim
15 words
A method as claimed is claim 15, wherein the third conductor includes a diamond tip.
Claim 19
Dependent Claim
19 words
A method as claimed in claim 16, wherein the diamond tip of the third conductor is implanted with boron.
Claim 20
Dependent Claim
19 words
A method as claimed in claim 17, wherein the diamond tip of the third conductor is coated with tungsten.
Claim 21
Dependent Claim
21 words
A method as claimed in claim 10, wherein the second conductor is fixed to the bottom surface of the semiconductor element.
Claim 22
Dependent Claim
19 words
A method as claimed in claim 19, wherein the second conductor is fixed to the bottom surface by soldering.
Claim 23
Dependent Claim
20 words
A method as claimed in claim 20, wherein the fourth conductor is fixed to the bottom surface of the sample.
Claim 24
Dependent Claim
19 words
A method as claimed in claim 21, wherein the fourth conductor is fixed to the bottom surface by soldering.
Claim 25
Independent Claim
189 words
A method of determining the carrier profile of a semiconductor element having a top surface and a bottom surface which comprises: (a) measuring the resistance of a plurality of semiconductor samples having respective known resistivities; (b) deriving a relationship of resistance versus resistivity from step (a); (c) placing a first conductor in contact with the top surface of the semiconductor element whose profile is to be determined; (d) placing a second conductor in contact with the top surface of said semiconductor element; (e) adjusting the contact pressure between the first and second conductors and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (f) measuring resistance between said first and second conductors after step (e); (g) changing the position of said first conductor; (h) repeating step (d) while maintaining the contact pressure at the value achieved in step (c); (i) determining a resistivity profile for the semiconductor element from the resistance measurements made in step (f) and the relationship derived in step (b); and (j) determining a carrier profile for the semiconductor element from the resistivity profile.
Claim 26
Independent Claim
189 words
A method of determining the carrier profile of a semiconductor element having a top surface and a bottom surface which comprises: (a) measuring the resistance of a plurality of semiconductor samples having respective known resistivities; (b) deriving a relationship of resistance versus resistivity from step (a); (c) placing a first conductor in contact with the top surface of the semiconductor element whose profile is to be determined; (d) placing a second conductor in contact with the top surface of said semiconductor element; (e) adjusting the contact pressure between the first and second conductors and the top surface using a scanning proximity microscope until a substantial current increase is measured between the first and second conductors; (f) measuring resistance between said first and second conductors after step (e); (g) changing the position of said first conductor; (h) repeating step (d) while maintaining the contact pressure at the value achieved in step (c); (i) determining a resistivity profile for the semiconductor element from the resistance measurements made in step (f) and the relationship derived in step (b); and (j) determining a carrier profile for the semiconductor element from the resistivity profile.
Claim 27
Dependent Claim
25 words
A method as claimed in claim 23, wherein the scanning proximity microscope used in step (a3) and step (e) is an AFM (Atomic Force Microscope).
Claim 28
Dependent Claim
18 words
A method as claimed in claim 23, wherein the scanning proximity microscope is an STM (Scanning Tunneling Microscope).
Claim 29
Dependent Claim
15 words
A method as claimed in claim 23, wherein the first conductor includes a diamond tip.
Claim 30
Dependent Claim
19 words
A method as claimed in claim 26, wherein the diamond tip of the first conductor is implanted with boron.
Claim 31
Dependent Claim
19 words
A method as claimed in claim 27, wherein the diamond tip of the first conductor is coated with tungsten.
Claim 32
Dependent Claim
15 words
A method as claimed is claim 28, wherein the second conductor includes a diamond tip.
Claim 33
Dependent Claim
19 words
A method as claimed in claim 29, wherein the diamond tip of the second conductor is implanted with boron.
Claim 34
Dependent Claim
19 words
A method as claimed in claim 30, wherein the diamond tip of the second conductor is coated with tungsten.
References Cited (Backward Citations)
US3487301A
Cited
US3590372A
Cited
JPS5560869A
Cited
JPS6148767A
Cited
US4943720A
Cited
US4992728A
Cited
JPH046844A
Cited
US5023561A
Cited
US5369372A
Cited
US5214389A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |