US5585292A
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Method of fabricating a thin film transistor
Assignee: Sharp Corp
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Filing: 1995-02-03
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Granted: 1996-12-17
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Expires: 2015-02-03
Abstract
Abstract A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insulator comprises an ONO structure having an interfacial oxide layer in contact with the polycrystalline silicon semiconductor layer, a cap oxide layer in contact with the gate electrode, and a nitride layer interposed between the interfacial oxide layer and the nitride layer.
Inventors
- 👤 Tatsuo Morita
- 👤 Robert J. Markunas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10P; H10P10/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
118 words
A method of forming a thin film transistor, the method comprising the steps of: forming a source region and a drain region in a polycrystalline silicon semiconductor layer, the polycrystalline silicon semiconductor layer being provided on a substrate; forming an ONO insulator structure on the polycrystalline silicon semiconductor layer; forming a gate electrode on the ONO insulator structure; wherein the step of forming the ONO insulator layer comprises; forming an interfacial oxide layer on the polycrystalline silicon layer; forming a nitride layer which is thinner than the interfacial oxide layer on the interfacial oxide layer; forming a cap oxide layer which is thicker than the interfacial oxide layer on the nitride layer by a chemical vapor deposition method.
Claim 2
Independent Claim
118 words
A method of forming a thin film transistor, the method comprising the steps of: forming a source region and a drain region in a polycrystalline silicon semiconductor layer, the polycrystalline silicon semiconductor layer being provided on a substrate; forming an ONO insulator structure on the polycrystalline silicon semiconductor layer; forming a gate electrode on the ONO insulator structure; wherein the step of forming the ONO insulator layer comprises; forming an interfacial oxide layer on the polycrystalline silicon layer; forming a nitride layer which is thinner than the interfacial oxide layer on the interfacial oxide layer; forming a cap oxide layer which is thicker than the interfacial oxide layer on the nitride layer by a chemical vapor deposition method.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein the interfacial oxide layer is SiO 2 , the cap oxide layer is SiO 2 , and the nitride layer is Si 3 N 4 .
Claim 4
Dependent Claim
37 words
The method of claim 1, wherein the interfacial oxide layer and the nitride layer are formed to have a thickness ratio to preclude electron trap formation at the interface of the polycrystalline silicon and the interfacial oxide.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein the interfacial oxide layer, and the nitride layer are formed to have a thickness ratio of 2:1.
Claim 6
Dependent Claim
27 words
The method of claim 1, wherein the interfacial oxide layer, the nitride layer, and the cap oxide layer are formed to have a thickness ratio of 10:5:85.
Claim 7
Independent Claim
138 words
A method of forming a thin film transistor, the method comprising the steps of: forming a gate electrode on a substrate; forming an ONO insulator structure on the gate electrode; forming a polycrystalline silicon semiconductor layer on the ONO insulator structure; forming a source region and a drain region on the polycrystalline silicon semiconductor layer; forming a gate electrode on the ONO insulator structure; wherein the step of forming the ONO insulator layer comprises: forming a gate oxide layer on the gate electrode; forming a nitride layer on the gate oxide layer; forming an interfacial oxide layer on the nitride layer; wherein the nitride layer is thinner than the interfacial oxide layer, wherein the gate oxide layer is thicker than the interfacial oxide layer, and wherein the gate oxide layer is formed by a chemical vapor deposition method.
Claim 8
Independent Claim
138 words
A method of forming a thin film transistor, the method comprising the steps of: forming a gate electrode on a substrate; forming an ONO insulator structure on the gate electrode; forming a polycrystalline silicon semiconductor layer on the ONO insulator structure; forming a source region and a drain region on the polycrystalline silicon semiconductor layer; forming a gate electrode on the ONO insulator structure; wherein the step of forming the ONO insulator layer comprises: forming a gate oxide layer on the gate electrode; forming a nitride layer on the gate oxide layer; forming an interfacial oxide layer on the nitride layer; wherein the nitride layer is thinner than the interfacial oxide layer, wherein the gate oxide layer is thicker than the interfacial oxide layer, and wherein the gate oxide layer is formed by a chemical vapor deposition method.
Claim 9
Dependent Claim
32 words
The method of claim 6, wherein the interfacial oxide layer is SiO 2 , the cap oxide layer is SiO 2 , and the nitride layer is Si 3 N 4 .
Claim 10
Dependent Claim
37 words
The method of claim 6, wherein the interfacial oxide layer and the nitride layer are formed to have a thickness ratio to preclude electron trap formation at the interface of the polycrystalline silicon and the interfacial oxide.
Claim 11
Dependent Claim
23 words
The method of claim 6, wherein the interfacial oxide layer, and the nitride layer are formed to have a thickness ratio of 2:1.
Claim 12
Dependent Claim
27 words
The method of claim 6, wherein the interfacial oxide layer, the nitride layer, and the cap oxide layer are formed to have a thickness ratio of 10:5:85.
References Cited (Backward Citations)
JPH0265274A
Cited
US5412493A
Cited
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