US5584964A
Expired / Lapsed
US
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Method of producing semiconductor device with viscous flow of silicon oxide
Assignee: Panasonic Holdings Corp
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Filing: 1995-05-30
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Granted: 1996-12-17
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Expires: 2015-05-30
Abstract
Abstract There is disclosed a method of producing a semiconductor memory device. An interlayer insulation film is formed on a semiconductor substrate including a switching transistor. Then, a memory node pattern reaching an active region of the switching transistor is formed. A cell plate electrode pattern is formed through an insulation film formed on the memory node in such a manner that a value obtained by subtracting a thickness of a polycrystalline silicon film for a cell plate electrode from an overlapping dimension of a memory node pattern and the cell plate electrode pattern is not less than two times larger and not more than ten times larger than a thickness of deposition of a BPSG film. Then, the BPSG film is deposited on an entire surface, and then is caused to viscously flow by a heat treatment. Then, an aluminum wiring is formed on the BPSG film. With this construction, a step of the aluminum wiring in a boundary region between a memory cell array portion and a peripheral circuit portion, or in a word line-backing contact forming region, is decreased, thereby preventing the lowering of the yield of the aluminum wiring which is caused by the cutting of the aluminum wiring and the remaining of a residue of etching for a contact-forming electrode (for example, tungsten).
Inventors
- 👤 Hiroyuki Umimoto
- 👤 Shin Hashimoto
- 👤 Shinji Odanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:42
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/133; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
212 words
A method of producing a semiconductor device comprising the steps of: depositing a second thin film on a semiconductor substrate or a first thin film; forming a pattern on said second thin film by a first photoresist, and etching said second thin film, using said first photoresist as a mask, to form a second thin film pattern, said second thin film extending by a first length on said semiconductor substrate or said first thin film to form a first step; depositing a third thin film on an entire surface including said second thin film; etching said third thin film, using a second photoresist on said third thin film as a mask, to form a third thin film pattern covering said second thin film, said third thin film extending by a second length on said second thin film to form a second step; depositing a silicon oxide film on said third thin film, said silicon oxide film containing impurities, wherein said first step and said second step resulting respectively from the pattern of said second thin film and the pattern of said third thin film are formed on the surface of an end portion of said third thin film pattern; and causing said silicon oxide film to viscously flow by a heat treatment.
Claim 2
Independent Claim
212 words
A method of producing a semiconductor device comprising the steps of: depositing a second thin film on a semiconductor substrate or a first thin film; forming a pattern on said second thin film by a first photoresist, and etching said second thin film, using said first photoresist as a mask, to form a second thin film pattern, said second thin film extending by a first length on said semiconductor substrate or said first thin film to form a first step; depositing a third thin film on an entire surface including said second thin film; etching said third thin film, using a second photoresist on said third thin film as a mask, to form a third thin film pattern covering said second thin film, said third thin film extending by a second length on said second thin film to form a second step; depositing a silicon oxide film on said third thin film, said silicon oxide film containing impurities, wherein said first step and said second step resulting respectively from the pattern of said second thin film and the pattern of said third thin film are formed on the surface of an end portion of said third thin film pattern; and causing said silicon oxide film to viscously flow by a heat treatment.
Claim 3
Dependent Claim
26 words
A method according to claim 1, in which said first, second and third thin films have less viscous flow than said silicon oxide film containing impurities.
Claim 4
Dependent Claim
20 words
A method according to claim 2, in which said silicon oxide film containing the impurities is made of borophosphosilicate glass.
Claim 5
Dependent Claim
38 words
A method according to claim 1, in which viscous flowing of said silicon oxide film, occurring at said first step and viscous flowing of said silicon oxide film, occurring at said second step, mutually interact with each other.
Claim 6
Dependent Claim
26 words
A method according to claim 4, in which said first, second and third thin films have less viscous flow than said silicon oxide film containing impurities.
Claim 7
Dependent Claim
20 words
A method according to claim 5, in which said silicon oxide film containing the impurities is made of borophosphosilicate glass.
Claim 8
Independent Claim
272 words
A method of producing a semiconductor device comprising the steps of: depositing a second thin film on a semiconductor substrate or a first thin film; forming a pattern on said second thin film by a first photoresist, and etching said second thin film, using said first photoresist as a mask, to form a second thin film pattern, said second thin film extending by a first length on said semiconductor substrate or said first thin film to form a first step; depositing a third thin film on an entire surface including said second thin film; etching said third thin film, using a second photoresist on said third thin film as a mask, to form a third thin film pattern covering said second thin film, said third thin film extending by a second length on said second thin film to form a second step, wherein said first step and said second step resulting respectively from said second thin film pattern and said third thin film patter are formed on the surface of an end portion of said third thin film pattern; depositing a silicon oxide film on said third thin film, said silicon oxide film containing impurities; and causing said silicon oxide film to viscously flow by a heat treatment; wherein a value obtained by subtracting the thickness of said third thin film from the length by which said third thin film pattern extends on said second thin film pattern to the outward periphery of said third thin film pattern is not less than two times larger and not more than ten times larger than the thickness of deposition of said silicon oxide film.
Claim 9
Independent Claim
272 words
A method of producing a semiconductor device comprising the steps of: depositing a second thin film on a semiconductor substrate or a first thin film; forming a pattern on said second thin film by a first photoresist, and etching said second thin film, using said first photoresist as a mask, to form a second thin film pattern, said second thin film extending by a first length on said semiconductor substrate or said first thin film to form a first step; depositing a third thin film on an entire surface including said second thin film; etching said third thin film, using a second photoresist on said third thin film as a mask, to form a third thin film pattern covering said second thin film, said third thin film extending by a second length on said second thin film to form a second step, wherein said first step and said second step resulting respectively from said second thin film pattern and said third thin film patter are formed on the surface of an end portion of said third thin film pattern; depositing a silicon oxide film on said third thin film, said silicon oxide film containing impurities; and causing said silicon oxide film to viscously flow by a heat treatment; wherein a value obtained by subtracting the thickness of said third thin film from the length by which said third thin film pattern extends on said second thin film pattern to the outward periphery of said third thin film pattern is not less than two times larger and not more than ten times larger than the thickness of deposition of said silicon oxide film.
Claim 10
Dependent Claim
26 words
A method according to claim 7, in which said first, second and third thin films have less viscous flow than said silicon oxide film containing impurities.
Claim 11
Dependent Claim
20 words
A method according to claim 8, in which said silicon oxide film containing the impurities is made of borophosphosilicate glass.
Claim 12
Independent Claim
241 words
A method of producing a semiconductor device comprising the steps of: forming an interlayer insulation film on a semiconductor substrate including a switching transistor, and forming a contact window reaching an active region of said switching transistor; depositing first polycrystalline silicon containing impurities in such a manner that said first polycrystalline silicon is in contact with said active region of said switching transistor through said contact window; forming a pattern on said first polycrystalline silicon by a first photoresist, and etching said first polycrystalline silicon, using said first photoresist as a mask, to form a first polycrystalline silicon pattern; forming a dielectric film on a surface of said first polycrystalline silicon, and further depositing second polycrystalline silicon on said dielectric film and on said first polycrystalline silicon layer, said second polycrystalline silicon containing impurities; forming a pattern on said second polycrystalline silicon by a second photoresist, and etching said second polycrystalline silicon, using said second photoresist as a mask, to form a second polycrystalline silicon pattern; depositing a silicon oxide film on said second polycrystalline silicon, said silicon oxide film containing impurities; and causing said silicon oxide film to viscously flow by a heat treatment; wherein the length by which said second polycrystalline silicon pattern extends on said interlayer insulation film outward from said first polycrystalline silicon layer is not less than two times larger and not more than four times larger than the thickness of said first polycrystalline silicon film.
Claim 13
Independent Claim
241 words
A method of producing a semiconductor device comprising the steps of: forming an interlayer insulation film on a semiconductor substrate including a switching transistor, and forming a contact window reaching an active region of said switching transistor; depositing first polycrystalline silicon containing impurities in such a manner that said first polycrystalline silicon is in contact with said active region of said switching transistor through said contact window; forming a pattern on said first polycrystalline silicon by a first photoresist, and etching said first polycrystalline silicon, using said first photoresist as a mask, to form a first polycrystalline silicon pattern; forming a dielectric film on a surface of said first polycrystalline silicon, and further depositing second polycrystalline silicon on said dielectric film and on said first polycrystalline silicon layer, said second polycrystalline silicon containing impurities; forming a pattern on said second polycrystalline silicon by a second photoresist, and etching said second polycrystalline silicon, using said second photoresist as a mask, to form a second polycrystalline silicon pattern; depositing a silicon oxide film on said second polycrystalline silicon, said silicon oxide film containing impurities; and causing said silicon oxide film to viscously flow by a heat treatment; wherein the length by which said second polycrystalline silicon pattern extends on said interlayer insulation film outward from said first polycrystalline silicon layer is not less than two times larger and not more than four times larger than the thickness of said first polycrystalline silicon film.
Claim 14
Dependent Claim
20 words
A method according to claim 10, in which said silicon oxide film containing the impurities is made of borophosphosilicate glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |