US5580799A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing transistor with channel implant
Assignee: Victor Company of Japan Ltd
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Filing: 1995-06-07
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Granted: 1996-12-03
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Expires: 2015-06-07
Abstract
Abstract A semiconductor device includes a substrate having a first conduction type. A gate insulating film is provided on the substrate. A gate electrode is formed on the gate insulating film. A source region provided on the substrate has a second conduction type different from the first conduction type. A drain region provided on the substrate has the second conduction type. The source region and the drain region extend below the gate insulating film, and are located at respective sides of the gate electrode. A first region provided on the substrate has the first conduction type and extends below the gate insulating film. A second region provided on the substrate has the second conduction type, and extends below the first region. The second region connects with the first region via a pn junction. Third regions provided on the substrate have the first conduction type, and connect with the second region via respective pn junctions. A first one of the third regions extends between the second region and the source region. A second one of the third regions extends between the second region and the drain region. The first region has a width which is smaller than a sum of a width of a depletion layer caused by the pn junction with the second region and a width of a depletion layer caused by application of a voltage to the gate electrode. Third regions have a width which is greater than a sum of a width of a depletion layer caused by the source region and a width of a depletion layer caused by the pn junctions with the second region.
Inventors
- 👤 Masaki Funaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D62/213; H10D62/221; H10D62/235; H10D62/314
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
191 words
A method of fabricating a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a first conductivity type; introducing impurities corresponding to the first conductivity type into the substrate to form a first region; introducing impurities corresponding to a second conductivity type into the substrate to form a second region, the second conductivity type differing from the first conductivity type, the second region being more distant from a surface of the substrate than the first region is; forming a gate insulating film on the surface of the substrate; forming a gate electrode on the gate insulating film: introducing impurities corresponding to the first conductivity type into a portion of the substrate to form a third region while using the gate electrode as a mask, wherein at least a part of the portion of the substrate overlaps a portion of the second region, and an impurity concentration in the third region is higher than an impurity concentration in the second region; and introducing impurities corresponding to the second conductivity type into the substrate to form a source region and a drain region while using the gate electrode as a mask.
Claim 2
Independent Claim
191 words
A method of fabricating a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a first conductivity type; introducing impurities corresponding to the first conductivity type into the substrate to form a first region; introducing impurities corresponding to a second conductivity type into the substrate to form a second region, the second conductivity type differing from the first conductivity type, the second region being more distant from a surface of the substrate than the first region is; forming a gate insulating film on the surface of the substrate; forming a gate electrode on the gate insulating film: introducing impurities corresponding to the first conductivity type into a portion of the substrate to form a third region while using the gate electrode as a mask, wherein at least a part of the portion of the substrate overlaps a portion of the second region, and an impurity concentration in the third region is higher than an impurity concentration in the second region; and introducing impurities corresponding to the second conductivity type into the substrate to form a source region and a drain region while using the gate electrode as a mask.
Claim 3
Dependent Claim
58 words
The method according to claim 1, further comprising the step of forming a second insulating film on the substrate and the gate electrode, wherein the source region and the drain region are formed after the second insulating film is formed, and a width of the third region is adjusted according to a thickness of the second insulating film.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein the step of introducing impurities to form the third region uses tilt angle ion implantation.
Claim 5
Independent Claim
206 words
A method of fabricating a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a first conductivity type; introducing impurities corresponding to the first conductivity type into the substrate to form a first region; introducing impurities corresponding to a second conduction type into the substrate to form a second region, the second conductivity type differing from the first conductivity type, the second region being more distant from a surface of the substrate than the first region is; forming a gate insulating firm on the surface of the substrate; forming a gate electrode on the gate insulating film; forming a resist which covers areas on the substrate; introducing impurities corresponding to the first conductivity type into a portion of the substrate to form a third region while using the gate electrode and the resist as a mask, wherein at least a part of the portion of the substrate overlaps a portion of the second region, and an impurity concentration in the third region is higher than an impurity concentration in the second region; removing the resist; and introducing impurities corresponding to the second conductivity type into the substrate to form a source region and a drain region while using the gate electrode as a mask.
Claim 6
Independent Claim
206 words
A method of fabricating a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a first conductivity type; introducing impurities corresponding to the first conductivity type into the substrate to form a first region; introducing impurities corresponding to a second conduction type into the substrate to form a second region, the second conductivity type differing from the first conductivity type, the second region being more distant from a surface of the substrate than the first region is; forming a gate insulating firm on the surface of the substrate; forming a gate electrode on the gate insulating film; forming a resist which covers areas on the substrate; introducing impurities corresponding to the first conductivity type into a portion of the substrate to form a third region while using the gate electrode and the resist as a mask, wherein at least a part of the portion of the substrate overlaps a portion of the second region, and an impurity concentration in the third region is higher than an impurity concentration in the second region; removing the resist; and introducing impurities corresponding to the second conductivity type into the substrate to form a source region and a drain region while using the gate electrode as a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-03 | 2000-06-03 | 2000-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-03 | 2004-06-03 | 2004-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-03 | 2008-06-03 | 2008-12-03 | $7700.00 | Window Closed / Lapsed |