Electro-optical device with transistors and capacitors method of driving the same

Claim 2

An electro-optical device comprising: a first gate line; a first pixel electrode connected with said first gate line through a first transistor; a second gate line being adjacent to said first gate line and connected with a second pixel electrode through a second transistor; a data line connected with said first transistor and said second transistor and extending across said first gate line and said second gate line; a capacitor comprising said first pixel electrode, said second gate line, and an insulator provided between said first pixel electrode and said second gate line; a third gate line extending in parallel with said first gate line with said second gate line intervening between said first and third gate lines; a fourth gate line extending in parallel with said first gate line with said third gate line intervening between said second and fourth gate lines, wherein said first pixel electrode and said second pixel electrode are arranged so that said data line extends therebetween and wherein said first pixel electrode extends substantially from said first gate line to said third gate line and said second pixel electrode extends substantially from said second gate line to said fourth gate line.

Claim 3

The device of claim 1 wherein surfaces of said first gate line and said second gate line are covered with an anodic oxide.

Claim 4

The device of claim 1 wherein said first pixel electrode is connected with said first gate line through a p-channel transistor and an n-channel transistor, said second gate line is connected with said second pixel electrode through another p-channel transistor and another n-channel transistor.

Claim 5

The device of claim 1 wherein said first pixel electrode is connected with said first gate line through an n-channel transistor and connected with a third gate line through a p-channel transistor, said second pixel electrode is connected with said second gate line through another n-channel transistor and connected with a fourth gate line though another p-channel transistor.

Claim 6

An electro-optical device comprising: a gate line of a n-th row connected with one transistor; a gate line of a (n+1)-th row adjacent to said gate line of the n-th row connected with a second transistor; a gate line of a (n+2)-th row being adjacent to said gate line of the (n+1)-th row and connected with another transistor; a pixel electrode connected with said one transistor and said another transistor; and a capacitor comprising said pixel electrode, said gate line of the (n+1)-th row, and an insulator provided between said pixel electrode and said gate line of the (n+1)-th row.

Claim 7

An electro-optical device comprising: a gate line of a n-th row connected with one transistor; a gate line of a (n+1)-th row adjacent to said gate line of the n-th row connected with a second transistor; a gate line of a (n+2)-th row being adjacent to said gate line of the (n+1)-th row and connected with another transistor; a pixel electrode connected with said one transistor and said another transistor; and a capacitor comprising said pixel electrode, said gate line of the (n+1)-th row, and an insulator provided between said pixel electrode and said gate line of the (n+1)-th row.

Claim 8

The device of claim 5 wherein at least one of said one transistor and said another transistor has n-type conductivity.

Claim 9

The device of claim 5 wherein said one transistor has one of p-type and n-type conductivities, and said another transistor has the other one of the p-type and n-type conductivities.

Claim 10

The device of claim 5 wherein said pixel electrode is connected with one of source and drain of each of said one transistor and said another transistor.

Claim 11

The device of claim 5 further comprising a data line connected with said one transistor and said another transistor.

Claim 12

An electro-optical device comprising: a first n-type transistor connected with a data line and a gate line of a n-th row; a second p-type transistor connected with said data line and said gate line of the n-th row; a third n-type transistor connected with said data line and a gate line of a (n-1)-th row adjacent to said gate line of the n-th row; and a fourth p-type transistor connected with said data line and said gate line of the (n-1)-th row, wherein said first transistor and said fourth transistor are provided on a side of said data line opposite to said second transistor and said third transistor.

Claim 13

An electro-optical device comprising: a first n-type transistor connected with a data line and a gate line of a n-th row; a second p-type transistor connected with said data line and said gate line of the n-th row; a third n-type transistor connected with said data line and a gate line of a (n-1)-th row adjacent to said gate line of the n-th row; and a fourth p-type transistor connected with said data line and said gate line of the (n-1)-th row, wherein said first transistor and said fourth transistor are provided on a side of said data line opposite to said second transistor and said third transistor.

Claim 14

An electro-optical device comprising: a pair of transistors having different conductivities provided for a pixel of n-th row; a pair of gate lines connected with gate electrodes of said transistors; a data line connected with one of source and drain of each of said transistors; a pixel electrode connected with the other one of the source and drain of each of said transistors; a gate line provided between said pair of gate lines and connected with a transistor provided for a pixel of (n+1)-th row; and a gate line provided between said pair of gate lines and connected with a transistor provided for a pixel of (n-1)-th row.

Claim 15

An electro-optical device comprising: a pair of transistors having different conductivities provided for a pixel of n-th row; a pair of gate lines connected with gate electrodes of said transistors; a data line connected with one of source and drain of each of said transistors; a pixel electrode connected with the other one of the source and drain of each of said transistors; a gate line provided between said pair of gate lines and connected with a transistor provided for a pixel of (n+1)-th row; and a gate line provided between said pair of gate lines and connected with a transistor provided for a pixel of (n-1)-th row.

Claim 16

The device of claim 11 wherein said pixel electrode and said gate line connected with the transistor provided for the pixel of (n+1)-th row constitute a capacitor.

Claim 17

The device of claim 11 wherein said pixel electrode and said gate line connected with the transistor provided for the pixel of (n-1)-th row constitute a capacitor.

Claim 18

The device of claim 11 wherein one of said pair of transistors has one of n-type and p-type conductivities and is connected with one of said pair of gate lines, and the other one of said pair of transistors has the other one of the n-type and p-type conductivities and is connected with the other one of said pair of gate lines, and said pixel electrode is provided on said gate line connected with the transistor provided for the pixel of (n+1)-th row and is provided on said gate line connected with the transistor provided for the pixel of (n-1)-th row.

Claim 19

An electro-optical device comprising: one pixel electrode provided on a substrate and connected with a (2i+1)-th gate line through a transistor, and a (2i+4)-th gate line through a transistor; another pixel electrode provided on said substrate and connected with a (2i+2)-th gate line through a transistor, said (2i+2)-th gate line being provided on said substrate between said (2i+1)-th gate line and said (2i+4)-th gate line; a further pixel electrode provided on said substrate and connected with a (2i+3)-th gate line through a transistor, said (2i+3)-th gate line being provided on said substrate between said (2i+2)-th gate line and said (2i+4)-th gate line; and a data line provided on said substrate between said one pixel electrode and said another pixel electrode and between said one pixel electrode and said further pixel electrode, wherein i is a natural number.

Claim 20

An electro-optical device comprising: one pixel electrode provided on a substrate and connected with a (2i+1)-th gate line through a transistor, and a (2i+4)-th gate line through a transistor; another pixel electrode provided on said substrate and connected with a (2i+2)-th gate line through a transistor, said (2i+2)-th gate line being provided on said substrate between said (2i+1)-th gate line and said (2i+4)-th gate line; a further pixel electrode provided on said substrate and connected with a (2i+3)-th gate line through a transistor, said (2i+3)-th gate line being provided on said substrate between said (2i+2)-th gate line and said (2i+4)-th gate line; and a data line provided on said substrate between said one pixel electrode and said another pixel electrode and between said one pixel electrode and said further pixel electrode, wherein i is a natural number.

Claim 21

The device of claim 15 wherein said one pixel electrode is provided on said (2i+2)-th gate line.

Claim 22

The device of claim 16 wherein said one pixel electrode and said (2i+2)-th gate line constitute a capacitor.

Claim 23

The device of claim 15 wherein said one pixel electrode is provided on said (2i+3)-th gate line.

Claim 24

The device of claim 18 wherein said one pixel electrode and said (2i+3)-th gate line constitute a capacitor.

Claim 27

An electro-optical device comprising: a first gate line; a first pixel electrode connected with said first gate line through a first transistor; a second gate line being adjacent to said first gate line and connected with a second pixel electrode through a second transistor; a data line connected with said first transistor and said second transistor and extending across said first gate line and said second gate line; a capacitor comprising said first pixel electrode, said second gate line, and an insulator provided between said first pixel electrode and said second gate line; a third gate line extending in parallel with said first gate line with said second gate line intervening between said first and third gate lines; a fourth gate line extending in parallel with said first gate line with said third gate line intervening between said second and fourth gate lines, wherein said first pixel electrode is connected with said first gate line through an n-channel transistor and connected with a third gate line through a p-channel transistor, and said second pixel electrode is connected with said second gate line through another n-channel and connected with a fourth gate line through another p-channel transistor.

Claim 28

An electro-optical device comprising: a first gate line; a first pixel electrode connected with said first gate line through a first transistor; a second gate line being adjacent to said first gate line and connected with a second pixel electrode through a second transistor; a data line connected with said first transistor and said second transistor and extending across said first gate line and said second gate line; a capacitor comprising said first pixel electrode, said second gate line, and an insulator provided between said first pixel electrode and said second gate line; a third gate line extending in parallel with said first gate line with said second gate line intervening between said first and third gate lines; a fourth gate line extending in parallel with said first gate line with said third gate line intervening between said second and fourth gate lines, wherein said first pixel electrode is connected with said first gate line through an n-channel transistor and connected with a third gate line through a p-channel transistor, and said second pixel electrode is connected with said second gate line through another n-channel and connected with a fourth gate line through another p-channel transistor.