US5576232A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication process for flash memory in which channel lengths are controlled
Assignee: United Microelectronics Corp
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Filing: 1994-12-12
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Granted: 1996-11-19
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Expires: 2014-12-12
Abstract
Abstract A process for fabricating memory cells for split-gate flash memory devices is disclosed to feature self-alignment and therefore precisely defined channel lengths for the floating-gate and isolation transistors of the memory cell. A gate oxide layer, a first conducting layer, and a gate dielectric layer are formed in sequence on a semiconductor substrate. A conducting strip is formed on the gate dielectric layer. The conducting strip is covered with a shielding layer. The gate dielectric layer, the first conducting layer and the gate oxide layer are etched utilizing the shielding layer as a shielding mask to form a control gate for the memory cell. Thermal oxidation is applied to the entire substrate utilizing the shielding layer as a shielding mask to form a tunnel oxide layer on the surface of the substrate and isolating oxide layers on the sidewalls of the control gate. The shielding layer is removed. Electrically conducting sidewall spacers are formed on both of the sidewalls of the conducting strip. Each of the conducting sidewall spacers cover a portion of the tunnel oxide layer and are also electrically isolated from the control gate by the isolating oxide layer, forming the floating gate for the memory cell. Impurities are implanted utilizing the conducting strip and the conducting sidewall spacers as shielding masks to form source and drain regions on the substrate for the memory cell.
Inventors
- 👤 Gary Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
H; H10; H10B; H10B41/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
225 words
A process for fabricating memory cells for semiconductor flash memory devices comprising the steps of: forming in sequence a gate oxide layer, a first conducting layer, and a gate dielectric layer on a semiconductor substrate; forming a conducting strip on said gate dielectric layer, and covering said conducting strip with a shielding layer subsequently; etching said gate dielectric layer, said first conducting layer and said gate oxide utilizing said shielding layer as a shielding mask to form a control gate for said memory cell; implementing a thermal oxidation to an entire substrate utilizing said shielding layer as a thermal oxidation shielding mask to form a tunnel oxide layer on the surface of the substrate and forming isolating oxide layers on the sidewalls of said control gate; removing said shielding layer; forming electrically conducting sidewall spacers on both sidewalls of said conducting strip, each of said conducting sidewall spacers also covering a portion of said tunnel oxide layer, and is electrically isolated from said control gate by said isolating oxide layers, thereby forming a floating gate for the memory cell; and implementing an impurity implantation process utilizing said conducting strip and said conducting sidewall spacers as a floating gate shielding mask to both form source and drain regions on said substrate for said memory cell and to provide floating gate channel lengths in the semiconductor substrate.
Claim 2
Dependent Claim
225 words
A process for fabricating memory cells for semiconductor flash memory devices comprising the steps of: forming in sequence a gate oxide layer, a first conducting layer, and a gate dielectric layer on a semiconductor substrate; forming a conducting strip on said gate dielectric layer, and covering said conducting strip with a shielding layer subsequently; etching said gate dielectric layer, said first conducting layer and said gate oxide utilizing said shielding layer as a shielding mask to form a control gate for said memory cell; implementing a thermal oxidation to an entire substrate utilizing said shielding layer as a thermal oxidation shielding mask to form a tunnel oxide layer on the surface of the substrate and forming isolating oxide layers on the sidewalls of said control gate; removing said shielding layer; forming electrically conducting sidewall spacers on both sidewalls of said conducting strip, each of said conducting sidewall spacers also covering a portion of said tunnel oxide layer, and is electrically isolated from said control gate by said isolating oxide layers, thereby forming a floating gate for the memory cell; and implementing an impurity implantation process utilizing said conducting strip and said conducting sidewall spacers as a floating gate shielding mask to both form source and drain regions on said substrate for said memory cell and to provide floating gate channel lengths in the semiconductor substrate.
Claim 3
Dependent Claim
16 words
The process for fabricating memory cells of claim 1, wherein said shielding layer include sidewall spacers.
Claim 4
Dependent Claim
18 words
The process for fabricating memory cells of claim 1 , wherein said shielding layer is a nitride layer.
Claim 5
Dependent Claim
25 words
The process for fabricating memory cells of claim 1, wherein said first conducting layer, said conducting strip and said conducting sidewall spacers are polysilicon layers.
Claim 6
Dependent Claim
19 words
The process for fabricating memory cells of claim 1 , where in said semiconductor substrate is a P-type substrate.
Claim 7
Dependent Claim
18 words
The process for fabricating memory cells of claim 1 , wherein said semiconductor substrate is an N-type substrate.
Claim 8
Independent Claim
209 words
A method for fabricating a memory cell for split-gate flash memory semiconductor devices comprising the steps of: forming a gate oxide area on a semiconductor substrate of a first conductivity type; forming a control gate layer symmetrically about said gate oxide area, a floating gate being formed by: a) forming on a gate dielectric layer a conducting strip having external sidewalls, b) locating said gate dielectric layer to electrically isolate said floating gate from said control gate layer, and c) locating electrically conducting sidewall spacers symmetrically about said conducting strip, said electrically conducting sidewall spacers contacting said external sidewalls, said electrically conducting sidewall spacers being electrically isolated form said control gate layer by an isolating oxide layer and said gate dielectric layer, said electrically conducting sidewall spacers being electrically isolated from said substrate by a tunnel oxide layer; and forming source and drain regions of a second conductivity type in said substrate by implementing impurities in portions of said substrate outside an external parameter of said floating gate, utilizing the conducting strip and the conducting sidewall spacers as a floating gate shielding mask to both form the source and drain regions on said substrate for the memory cell and to provide floating gate channel lengths in the semiconductor substrate.
Claim 9
Independent Claim
209 words
A method for fabricating a memory cell for split-gate flash memory semiconductor devices comprising the steps of: forming a gate oxide area on a semiconductor substrate of a first conductivity type; forming a control gate layer symmetrically about said gate oxide area, a floating gate being formed by: a) forming on a gate dielectric layer a conducting strip having external sidewalls, b) locating said gate dielectric layer to electrically isolate said floating gate from said control gate layer, and c) locating electrically conducting sidewall spacers symmetrically about said conducting strip, said electrically conducting sidewall spacers contacting said external sidewalls, said electrically conducting sidewall spacers being electrically isolated form said control gate layer by an isolating oxide layer and said gate dielectric layer, said electrically conducting sidewall spacers being electrically isolated from said substrate by a tunnel oxide layer; and forming source and drain regions of a second conductivity type in said substrate by implementing impurities in portions of said substrate outside an external parameter of said floating gate, utilizing the conducting strip and the conducting sidewall spacers as a floating gate shielding mask to both form the source and drain regions on said substrate for the memory cell and to provide floating gate channel lengths in the semiconductor substrate.
References Cited (Backward Citations)
US5021848A
Cited
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-11-19 | 2000-05-20 | 2000-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-19 | 2004-05-20 | 2004-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-19 | 2008-05-20 | 2008-11-19 | $7700.00 | Window Closed / Lapsed |