US5572465A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power supply configured sensing scheme for flash EEPROM
Assignee: Micron Technology Inc
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Filing: 1995-05-25
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Granted: 1996-11-05
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Expires: 2015-05-25
Abstract
Abstract Bias selector circuitry for a memory cell sensing circuit is described. The bias selector circuitry includes a reference voltage generator, an output node, and a selector. The output node provides the bias voltage to the reference bitline load and the sense bitline load for controlling the reference and sense bitline node voltages, respectively. The selector provides a first bias voltage to the output node if a power supply voltage is at a first level. The selector selects the reference voltage generator to provide a second bias voltage to the output node if the power supply voltage is at a second level. The reference bitline node voltage is maintained at approximately the midpoint of the operating range of the sense bitline node voltage.
Inventors
- 👤 Amir Bashir
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:50
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28; G11C16/24
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
124 words
Bias selector circuitry for a memory cell sensing circuit, comprising: a reference voltage generator; a selector for providing a bias voltage to both a reference bitline load for controlling a reference bitline node voltage and a sense bitline load for controlling a sense bitline node voltage; wherein the selector provides a first bias voltage to the reference and sense bitline loads if a power supply voltage is at a first level, wherein the selector selects the reference voltage generator to provide a second bias voltage to the reference and sense bitline loads if the power supply voltage is at a second level, wherein the reference bitline node voltage is maintained at approximately a midpoint of an operating range of the sense bitline node voltage.
Claim 2
Dependent Claim
124 words
Bias selector circuitry for a memory cell sensing circuit, comprising: a reference voltage generator; a selector for providing a bias voltage to both a reference bitline load for controlling a reference bitline node voltage and a sense bitline load for controlling a sense bitline node voltage; wherein the selector provides a first bias voltage to the reference and sense bitline loads if a power supply voltage is at a first level, wherein the selector selects the reference voltage generator to provide a second bias voltage to the reference and sense bitline loads if the power supply voltage is at a second level, wherein the reference bitline node voltage is maintained at approximately a midpoint of an operating range of the sense bitline node voltage.
Claim 3
Dependent Claim
18 words
The bias selector circuitry of claim 1, wherein when the memory cell is a FLASH EEPROM memory cell.
Claim 4
Dependent Claim
24 words
The bias selector circuitry of claim 1 wherein the reference voltage generator comprises a plurality of series-coupled, diode-connected field effect transistors of a first-type.
Claim 5
Dependent Claim
22 words
The bias selector circuitry of claim 1 wherein the reference voltage generator is powered up only when a sense operation is performed.
Claim 6
Dependent Claim
38 words
The bias selector circuitry of claim 1, wherein the first level corresponds to power supply voltages less than approximately 4 volts, wherein the second level corresponds to power supply voltages greater than or equal to approximately 4 volts.
Claim 7
Dependent Claim
33 words
The bias selector circuitry of claim 5, wherein when the power supply voltage is at the first level the selector is coupled to provide the power supply voltage as the first bias voltage.
Claim 8
Dependent Claim
97 words
The bias selector circuitry of claim 6 wherein the selector further comprises logic circuitry coupled to a power supply voltage level detector, the logic circuitry providing a first signal and a second signal responsive to a level of the power supply voltage, the second signal complementary to the first signal; a first enabling transistor for coupling the power supply voltage to the reference and sense bitline loads in response to the first signal; and a second enabling transistor for coupling the reference voltage generator to the reference and sense bitline loads in response to the second signal.
Claim 9
Dependent Claim
43 words
The selector of claim 7 wherein: the first enabling transistor is a field effect transistor having a gate coupled to receive the first signal; and the second enabling transistor is a field effect transistor having a gate coupled to receive the second signal.
Claim 10
Dependent Claim
73 words
The logic circuitry of claim 7 further comprising: a NAND gate, the NAND gate coupled to receive a signal from the power supply voltage detector and a read enable signal, an output of the NAND gate coupled to the gate of the first enabling transistor; and a NOT gate coupled to receive an output of the NAND gate, an output of the NOT gate coupled to the gate of the second enabling transistor.
Claim 11
Dependent Claim
143 words
Memory cell sensing circuitry comprising: a reference bitline load for controlling a reference current through a reference bitline; a sense bitline load for controlling a sense current through a sense bitline, the sense bitline coupled to a selected memory cell; a sense amplifier having a first input coupled to the reference bitline and a second input coupled to the sense bitline; a bias voltage selector, wherein the bias voltage selector provides a first bias voltage to the reference bitline and sense bitline loads if a power supply voltage is at a first level, wherein the bias voltage selector provides a second bias voltage to the reference bitline and sense bitline loads if the power supply voltage is at a second level, wherein a reference bitline node voltage is maintained at approximately a midpoint of an operating range of a sense bitline node voltage.
Claim 12
Dependent Claim
143 words
Memory cell sensing circuitry comprising: a reference bitline load for controlling a reference current through a reference bitline; a sense bitline load for controlling a sense current through a sense bitline, the sense bitline coupled to a selected memory cell; a sense amplifier having a first input coupled to the reference bitline and a second input coupled to the sense bitline; a bias voltage selector, wherein the bias voltage selector provides a first bias voltage to the reference bitline and sense bitline loads if a power supply voltage is at a first level, wherein the bias voltage selector provides a second bias voltage to the reference bitline and sense bitline loads if the power supply voltage is at a second level, wherein a reference bitline node voltage is maintained at approximately a midpoint of an operating range of a sense bitline node voltage.
Claim 13
Dependent Claim
65 words
The memory cell sensing circuitry of claim 10 wherein the bias voltage selector further comprises: a reference voltage generator providing the first bias voltage; a selector coupled to receive the first bias voltage from the reference voltage generator, the selector responsive to a level of the power supply for providing one of the first and second bias voltages to the reference and sense bitline loads.
Claim 14
Dependent Claim
19 words
The memory cell sensing circuitry of claim 11 wherein the selected memory cell is a FLASH EEPROM memory cell.
Claim 15
Dependent Claim
24 words
The bias voltage selector of claim 11 wherein the reference voltage generator comprises a plurality of series-coupled, diode-connected field effect transistors of a first-type.
Claim 16
Dependent Claim
22 words
The bias voltage selector of claim 11 wherein the reference voltage generator is powered up only when a sense operation is performed.
Claim 17
Dependent Claim
38 words
The bias voltage selector of claim 11, wherein the first level corresponds to power supply voltages less than approximately 4 volts, wherein the second level corresponds to power supply voltages greater than or equal to approximately 4 volts.
Claim 18
Dependent Claim
35 words
The bias voltage selector of claim 15, wherein when the power supply voltage is at a first level the selector couples the power supply voltage to the output node to provide the first bias voltage.
Claim 19
Independent Claim
79 words
A method of controlling a reference voltage for memory sensing circuitry, comprising the steps of: detecting a level of a power supply voltage; applying a first bias voltage to a reference bitline load and to a sense bitline load during a read operation if the power supply voltage is at a first level; applying a second bias voltage to the reference and sense bitline loads during the read operation when the power supply voltage is at a second level.
Claim 20
Independent Claim
79 words
A method of controlling a reference voltage for memory sensing circuitry, comprising the steps of: detecting a level of a power supply voltage; applying a first bias voltage to a reference bitline load and to a sense bitline load during a read operation if the power supply voltage is at a first level; applying a second bias voltage to the reference and sense bitline loads during the read operation when the power supply voltage is at a second level.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-11-05 | 2000-05-06 | 2000-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-11-05 | 2004-05-06 | 2004-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-11-05 | 2008-05-06 | 2008-11-05 | $7700.00 | Window Closed / Lapsed |