Multi-port SRAM core array

Claim 2

A multi-port SRAM (static random access memory) core array comprising: at least one pseudo-differential write access port; at least one differential indirect read access port; and a core cell having first and second data input and output terminals, the core cell performing a data latch function for storing binary data.

Claim 3

The multi-port SRAM core array of claim 1, further comprising conductive-nonconductive means for providing a pseudo-differential write access.

Claim 4

The multi-port SRAM core array of claim 2, wherein the conductive-nonconductive means provides, during a write operation mode, a binary data signal to either of the terminals of the core cell, in response to a write word line signal, the data signal corresponding to zero or one derived from a write bit line.

Claim 5

The multi-port SRAM core array of claim 3, wherein the conductive-nonconductive means includes first and second FETs (field effect transistors), the drain-source of the first FET being connected to one of the terminals of the core cell and the write bit line on which the binary data signal is present, and the drain-source of the second FET being connected to the other terminal of the core cell and an indirect bit write access FET, in which the binary data is written into the core cell via the conductive FET and latched therein.

Claim 6

The multi-port SRAM core array of claim 1, wherein the core cell is connected to a plurality of read word lines and a plurality of pairs of read bit lines, differential data being present on a pair of read bit lines during a read operation mode in response to a word line read signal.

Claim 7

The multi-port SRAM core array of claim 5, further comprising a plurality of pairs of gating means for providing a differential indirect read access.

Claim 8

The multi-port SRAM core array of claim 6, wherein one pair of gating means corresponds to one pair of read bit lines, each gating means being connected between the respective terminal of the core cell and the respective differential read bit line.

Claim 9

The multi-port SRAM core array of claim 7, wherein each gating means comprises a plurality of conductive-nonconductive means which are controlled by the respective word line read signals, the conductive-nonconductive means transferring the data latched in the core cell in a differential form to the respective pair of read bit lines, while the respective read word line is active.

Claim 10

The multi-port SRAM core array of claim 8, wherein the conductive-nonconductive means are FETs.

Claim 11

A multi-port SRAM core array comprising: a core cell having first and second data input and output terminals, the core cell performing a data latch function for storing binary data; conductive-nonconductive means for providing, during a write operation mode, a binary data signal to either of the terminals of the core cell, in response to a write word line signal, the data signal corresponding to zero or one derived from a write bit line; and a plurality of pairs of gating means, each being connected between the respective terminal of the core cell and a respective one of a plurality of differential read bit lines, in which differential data is present on a pair of read bit lines during a read operation mode in response to a word line read signal.

Claim 12

A multi-port SRAM core array comprising: a core cell having first and second data input and output terminals, the core cell performing a data latch function for storing binary data; conductive-nonconductive means for providing, during a write operation mode, a binary data signal to either of the terminals of the core cell, in response to a write word line signal, the data signal corresponding to zero or one derived from a write bit line; and a plurality of pairs of gating means, each being connected between the respective terminal of the core cell and a respective one of a plurality of differential read bit lines, in which differential data is present on a pair of read bit lines during a read operation mode in response to a word line read signal.

Claim 13

The multi-port SRAM core array of claim 10, wherein the conductive-nonconductive means comprises FETs.

Claim 14

The multi-port SRAM core array of claim 10, wherein each gating means comprises a plurality of conductive-nonconductive means which are controlled by the respective word line read signals, the conductive-nonconductive means transferring the data latched in the core cell in a differential form to the respective pair of read bit lines, while the respective read word line is active.

Claim 15

The multi-port SRAM core array of claim 12, wherein the conductive-nonconductive means are FETs.