US5557121A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laminated solid-state image sensing apparatus and method of manufacturing the same
Assignee: Canon Inc
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Filing: 1995-02-14
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Granted: 1996-09-17
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Expires: 2015-02-14
Abstract
Abstract A solid-state image sensing apparatus including: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in the storage portion; an insulating film formed on the surface of the substrate and having an opening formed above the charge storage portion; and a photosensitive layer formed on the insulating film and electrically connected to the charge storage portion via the opening, wherein an embedded region is formed within the opening and the surface of the insulating film and that of the embedded region are substantially flattened.
Inventors
- 👤 Hiraku Kozuka
- 👤 Shigetoshi Sugawa
- 👤 Masato Yamanobe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:51
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
163 words
A solid-state image sensing apparatus comprising: a substrate having a plurality of charge storage portions capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in said storage portions; an insulating film formed on the surface of said substrate and having a plurality of openings, each of said openings formed above each respective charge storage portion; and a columnar embedded region formed within each of said openings and the surface of said insulating film and that of said embedded regions are substantially flattened; a photosensitive layer of an intrinsic or non-doped semiconductor formed on said insulating film and electrically connected to said charge storage portions via said embedded regions, wherein each of said embedded regions comprises a P-type or N-type doped semiconductor region provided in direct contact with said photosensitive layer to form pi or ni contact between said photosensitive layer and said embedded region and wherein said opening has a substantially vertical side wall.
Claim 2
Dependent Claim
163 words
A solid-state image sensing apparatus comprising: a substrate having a plurality of charge storage portions capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in said storage portions; an insulating film formed on the surface of said substrate and having a plurality of openings, each of said openings formed above each respective charge storage portion; and a columnar embedded region formed within each of said openings and the surface of said insulating film and that of said embedded regions are substantially flattened; a photosensitive layer of an intrinsic or non-doped semiconductor formed on said insulating film and electrically connected to said charge storage portions via said embedded regions, wherein each of said embedded regions comprises a P-type or N-type doped semiconductor region provided in direct contact with said photosensitive layer to form pi or ni contact between said photosensitive layer and said embedded region and wherein said opening has a substantially vertical side wall.
Claim 3
Dependent Claim
17 words
A solid-state image sensing apparatus according to claim 1, wherein said photosensitive layer includes an avalanche photodiode.
Claim 4
Dependent Claim
32 words
A solid-state image sensing apparatus according to claim 1, wherein said photosensitive layer has a multiplying layer formed on said embedded region and a light absorbing layer formed on said multiplying layer.
Claim 5
Dependent Claim
38 words
A solid-state image sensing apparatus according to claim 3, wherein said multiplying layer has a plurality of stacked regions in each of which a band gap is continuously changed and an energy step is formed between said regions.
Claim 6
Dependent Claim
29 words
A solid-state image sensing apparatus according to claim 1, wherein said output circuit includes switches disposed to correspond to unit cells and a drive circuit for driving said switches.
Claim 7
Dependent Claim
24 words
A solid-state image sensing apparatus according to claim 1, wherein said storage region is a portion of a transistor which constitutes said output circuit.
Claim 8
Independent Claim
128 words
A method of manufacturing a solid-state image sensing apparatus having: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in said storage portion; an insulating film formed on the surface of said substrate and having an opening formed above said charge storage portion; and a photosensitive layer formed on said insulating film and electrically connected to said charge storage portion via said opening, said method of manufacturing a solid-state image sensing apparatus comprising the steps of: forming said insulating film on said substrate; forming an embedded region within said opening; flattening the surface of said embedded region and that of said insulating film; and forming said photosensitive layer on said insulating film.
Claim 9
Independent Claim
128 words
A method of manufacturing a solid-state image sensing apparatus having: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in said storage portion; an insulating film formed on the surface of said substrate and having an opening formed above said charge storage portion; and a photosensitive layer formed on said insulating film and electrically connected to said charge storage portion via said opening, said method of manufacturing a solid-state image sensing apparatus comprising the steps of: forming said insulating film on said substrate; forming an embedded region within said opening; flattening the surface of said embedded region and that of said insulating film; and forming said photosensitive layer on said insulating film.
Claim 10
Dependent Claim
59 words
A method of manufacturing a solid-state image sensing apparatus according to claim 7, wherein said flattening process is performed in such a manner that forming of an amorphous semiconductor on said insulating layer and forming of a crystalline semiconductor in said opening are simultaneously performed, and then the entire surface is etched, so that said amorphous semiconductor is removed.
Claim 11
Dependent Claim
50 words
A method of manufacturing a solid-state image sensing apparatus according to claim 7, wherein said flattening process is performed in such a manner that said insulating layer is flattened by etching, and then a material which constitutes said embedded region is deposited in said opening by a selective deposition method.
Claim 12
Dependent Claim
28 words
A solid-state image sensing apparatus according to claim 1, wherein said output circuit is connected to an external circuit which generates a signal for activating said output circuit.
Claim 13
Dependent Claim
24 words
An apparatus comprising: a solid-state image sensing apparatus according to claim 1, and recording means for recording an image picked up by said apparatus.
Claim 14
Dependent Claim
14 words
An apparatus according to claim 1, wherein said photosensitive layer comprises a non-monocrystalline semiconductor.
Claim 15
Dependent Claim
24 words
An apparatus according to claim 1, wherein said photosensitive layer comprises a non-monocrystalline semiconductor a main component of which is Si, Ge or C.
Claim 16
Dependent Claim
16 words
An apparatus according to claim 1, 12 or 13, wherein said embedded regions comprise microcrystalline semiconductors.
Claim 17
Dependent Claim
20 words
An apparatus according to claim 1, further comprising a p- or n- type semiconductor layer provided on said photosensitive layer.
Claim 18
Dependent Claim
28 words
An apparatus according to claim 1, wherein said photosensitive layer comprises a material selected from the group consisting of amorphous Si, amorphous SiGe, amorphous SiC and amorphous SiGeC.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-17 | 2000-03-18 | 2000-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-17 | 2004-03-18 | 2004-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-17 | 2008-03-18 | 2008-09-17 | $7700.00 | Window Closed / Lapsed |