US5556718A
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Magnetoresistive head
Assignee: TDK Corp
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Filing: 1993-05-18
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Granted: 1996-09-17
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Expires: 2013-05-18
Abstract
Abstract In a magnetoresistive effect head comprising a ferromagnetic magnetoresistive effect layer, an inverse ferromagnetic layer (3) for generating a longitudinal bias magnetic field by an exchange force with respect to the ferromagnetic magnetoresistive effect layer (4), a ground layer (2) having a face-centered cubic structure is provided on only a portion of the anti-ferromagnetic layer. In the magnetoresistive effect head further comprising a soft magnetic bias-assistant layer (12) for a transversal bias magnetic field in the ferromagnetic magnetoresistive effect layer (15), the soft magnetic bias-assistant layer (12) has a crystal structure other than a face-centered cubic structure, the ground layer (13) having a face-centered cubic structure is provided on only a portion of the anti-ferromagnetic layer (14).
Inventors
- 👤 Yoshihiro Motomura
- 👤 Suzuki Tetsuhiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:00
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3929; G11B5/3932; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/11; Y10T428/1171; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12861; Y10T428/12931
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
93 words
In a magnetoresistive head comprising a substrate, a ferromagnetic magnetoresistive effect layer dispose on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange force with respect to said ferromagnetic magnetoresistive effect layer, said anti-ferromagnetic layer being provided in direct contact with said ferromagnetic magnetoresistive effect layer and composed of or mainly composed of FeMn, and means for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer.
Claim 2
Dependent Claim
93 words
In a magnetoresistive head comprising a substrate, a ferromagnetic magnetoresistive effect layer dispose on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange force with respect to said ferromagnetic magnetoresistive effect layer, said anti-ferromagnetic layer being provided in direct contact with said ferromagnetic magnetoresistive effect layer and composed of or mainly composed of FeMn, and means for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer.
Claim 3
Dependent Claim
20 words
The magnetoresistive head according to claim 1, said ground layer is Cu or alloys of NiCr having face-centered cubic structures.
Claim 4
Dependent Claim
28 words
The magnetoresistive head according to claim 1, wherein said ferromagnetic effect layer is made of material selected from the group consisting of Co, Ni, Ni--Fe, Co--Fe, and Co--Ni.
Claim 5
Dependent Claim
15 words
The magnetoresistive head according to claim 1, wherein said anti-ferromagnetic layer is made of FeMn.
Claim 6
Dependent Claim
114 words
A magnetoresistive head comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange coupling force with respect to said ferromagnetic magnetoresistive effect layer, and a soft magnetic bias layer for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein said soft magnetic bias layer has a crystal structure, a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate, and said soft bias layer, said ground layer, said anti-ferromagnetic layer and said ferromagnetic magnetoresistive effect layer are laminated in the mentioned order.
Claim 7
Dependent Claim
114 words
A magnetoresistive head comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange coupling force with respect to said ferromagnetic magnetoresistive effect layer, and a soft magnetic bias layer for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein said soft magnetic bias layer has a crystal structure, a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate, and said soft bias layer, said ground layer, said anti-ferromagnetic layer and said ferromagnetic magnetoresistive effect layer are laminated in the mentioned order.
Claim 8
Dependent Claim
22 words
The magnetoresistive head according to claim 5, wherein said ferromagnetic magnetoresistive effect layer is of the same material as said ground layer.
Claim 9
Dependent Claim
22 words
The magnetoresistive head according to claim 5, wherein said anti-ferromagnetic layer is made of FeMn or a material mainly composed of FeMn.
Claim 10
Dependent Claim
30 words
The magnetoresistive head according to claim 5, wherein said ground layer is made of material selected from the group consisting of Cu and alloys of NiCr having face-centered cubic structures.
Claim 11
Dependent Claim
27 words
The magnetroesistive head according to claim 5, wherein said anti-ferromagnetic layer is an anti-ferromagnetic alloy made of material selected from the group consisting of FeMn and FeMnCr.
Claim 12
Dependent Claim
29 words
The magnetoresistive head according to claim 5, wherein said ferromagnetic magnetoresistive effect layer is made of material selected from the group consisting of Co, Ni, Ni--Fe, Co--Fe, and Co--Ni.
Claim 13
Dependent Claim
21 words
The magnetoresistive head according to claim 5, wherein said soft magnetic bias layer is a non-crystalline soft magnetic material comprising CoZr.
Claim 14
Dependent Claim
21 words
The magnetoresistive head according to claim 5, wherein said soft magnetic bias layer is a non-crystalline soft magnetic material comprising CoZrNb.
Claim 15
Dependent Claim
21 words
The magnetoresistive head according to claim 5, wherein said soft magnetic bias layer is a non-crystalline soft magnetic material comprising CoZrMo.
Claim 16
Dependent Claim
21 words
The magnetoresistive head according to claim 5, wherein said soft magnetic bias layer is a non-crystalline soft magnetic material comprising CoZrTa.
Claim 17
Dependent Claim
21 words
The magnetoresistive head according to claim 5, wherein said soft magnetic bias layer is a non-crystalline soft magnetic material comprising CoTa.
Claim 18
Dependent Claim
100 words
In a magnetoresistive element comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange force with respect to said ferromagnetic magnetoresistive effect layer, said anti-ferromagnetic layer being provided in direct contact with said ferromagnetic magnetoresistive effect layer, and composed of or mainly composed of FeMn, and means for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate.
Claim 19
Dependent Claim
100 words
In a magnetoresistive element comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange force with respect to said ferromagnetic magnetoresistive effect layer, said anti-ferromagnetic layer being provided in direct contact with said ferromagnetic magnetoresistive effect layer, and composed of or mainly composed of FeMn, and means for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate.
Claim 20
Dependent Claim
116 words
In a magnetoresistive effect element comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange coupling force with respect to said ferromagnetic magnetoresistive effect layer, and a soft magnetic bias layer for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein said soft magnetic bias layer has a crystal structure, a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate, and said soft bias layer, said ground layer, said anti-ferromagnetic layer and said ferromagnetic magnetoresistive effect layer are laminated in the mentioned order.
Claim 21
Dependent Claim
116 words
In a magnetoresistive effect element comprising a substrate, a ferromagnetic magnetoresistive effect layer disposed on said substrate, an anti-ferromagnetic layer for generating a longitudinal bias magnetic field by an exchange coupling force with respect to said ferromagnetic magnetoresistive effect layer, and a soft magnetic bias layer for generating a transversal bias magnetic field in said ferromagnetic magnetoresistive effect layer, wherein said soft magnetic bias layer has a crystal structure, a ground layer having a face-centered cubic structure is provided on a portion of said anti-ferromagnetic layer between said anti-ferromagnetic layer and said substrate, and said soft bias layer, said ground layer, said anti-ferromagnetic layer and said ferromagnetic magnetoresistive effect layer are laminated in the mentioned order.
References Cited (Backward Citations)
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