US5554876A
Expired / Lapsed
US
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Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
Assignee: Renesas Electronics Corp
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Filing: 1994-08-16
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Granted: 1996-09-10
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Expires: 2014-08-16
Abstract
Abstract An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate voltage, and a method of manufacturing such a transistor are provided. A nitrided oxide film is formed on a drain avalanche hot carrier injection region. The nitrided oxide film is highly resistive to drain avalanche hot carriers as compared to a silicon oxide film. The silicon oxide film is formed on a channel hot electron injection region. The silicon oxide film is highly resistive to channel hot electrons as compared to the nitrided oxide film. A major portion of a gate insulator film is a silicon oxide film. The silicon oxide film exhibits a higher current handling capability at a low gate voltage as compared to the nitrided oxide film.
Inventors
- 👤 Shigeru Kusunoki
- 👤 Masahide Inuishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/01346; H10D64/021; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/683; H10D64/693; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/69215; H10P30/00; H10P30/20; H10P30/22; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
A field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said field effect transistor comprising: a semiconductor substrate having a main surface; a source region and a drain region formed with a spacing from each other in said semiconductor substrate; an insulating film formed on said main surface located between said source region and said drain region; a gate electrode formed on said insulating film; and sidewall films including a nitrided oxide film to interpose said gate electrode therebetween.
Claim 2
Dependent Claim
87 words
A field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said field effect transistor comprising: a semiconductor substrate having a main surface; a source region and a drain region formed with a spacing from each other in said semiconductor substrate; an insulating film formed on said main surface located between said source region and said drain region; a gate electrode formed on said insulating film; and sidewall films including a nitrided oxide film to interpose said gate electrode therebetween.
Claim 3
Dependent Claim
130 words
A field effect transistor, comprising: a semiconductor substrate having a major surface; source and drain regions spaced apart from each other in the major surface of said substrate and defining a channel region therebetween; a gate insulating film overlying at least the channel region on the major surface of said substrate; and a gate electrode on said gate insulating film; wherein said gate insulating film comprises, respectively, a first discrete region of a nitrided oxide and a second discrete region of silicon oxide adjacent the first discrete region along a channel in a direction which extends between said source and drain regions, wherein the second discrete region of silicon oxide has a nitrogen concentration equal to zero or lower than a nitrogen concentration in the first discrete nitrided oxide region.
Claim 4
Dependent Claim
130 words
A field effect transistor, comprising: a semiconductor substrate having a major surface; source and drain regions spaced apart from each other in the major surface of said substrate and defining a channel region therebetween; a gate insulating film overlying at least the channel region on the major surface of said substrate; and a gate electrode on said gate insulating film; wherein said gate insulating film comprises, respectively, a first discrete region of a nitrided oxide and a second discrete region of silicon oxide adjacent the first discrete region along a channel in a direction which extends between said source and drain regions, wherein the second discrete region of silicon oxide has a nitrogen concentration equal to zero or lower than a nitrogen concentration in the first discrete nitrided oxide region.
Claim 5
Dependent Claim
27 words
The field effect transistor of claim 2, wherein said second region of nitrided oxide is closer than said first region of silicon oxide to said drain region.
Claim 6
Dependent Claim
61 words
The field effect transistor of claim 2, wherein said drain region comprises adjoining high concentration and low concentration regions, with said low concentration region being closer than said high concentration region to said channel region, and wherein said second region of nitrided oxide of said gate insulating film overlies an interface between said high and low concentration regions in said substrate.
Claim 7
Dependent Claim
20 words
The field effect transistor of claim 4, wherein said first silicon oxide region overlies the channel region in said substrate.
Claim 8
Dependent Claim
31 words
The field effect transistor of claim 5, wherein said first silicon oxide region extends slightly outside the channel region to overlie a portion of the low concentration region in said substrate.
Claim 9
Dependent Claim
30 words
The field effect transistor of claim 2, wherein a sidewall insulating film is provided to interpose said gate electrode, and said gate insulating film extends beneath said sidewall insulating film.
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| 3.5 Years (Year 4) | 1999-09-10 | 2000-03-11 | 2000-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-10 | 2004-03-11 | 2004-09-10 | $3760.00 | Window Closed / Lapsed |
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