US5552949A
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Magnetoresistance effect element with improved antiferromagnetic layer
Assignee: Toshiba Corp
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Filing: 1994-03-02
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Granted: 1996-09-03
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Expires: 2014-03-02
Abstract
Abstract An exchange coupled film is presented, which has an antiferromagnetic film being made of N 100-z Mn z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24≦z≦75) and having a tetragonal crystalline structure or being made of Cr 100-x M x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0<x<30) and a ferromagnetic film at least part of which is laminated with the antiferromagnetic film. With such an antiferromagnetic film, an exchange coupled film with a good exchange coupling characteristic and high corrosive resistance can be obtained.
Inventors
- 👤 Susumu Hashimoto
- 👤 Yuzo Kamiguchi
- 👤 Hitoshi Iwasaki
- 👤 Atsuhito Sawabe
- 👤 Masashi Sahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:13
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/399; H; H10; H10N; H10N50/00; H10N50/10
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
85 words
A magnetoresistance effect element, comprising: a substrate; an exchange coupled film, formed on said substrate, comprising an antiferromagnetic layer and a ferromagnetic layer at least part of which is laminated with said antiferromagnetic layer; electrodes for providing an electric current to said ferromagnetic layer, wherein said antiferromagnetic layer comprises Cr 100-x M x , where M is at least one selected from the group consisting of Ga, In, Cu, Rh, Pt, Pd, Ag, Os, Ir, and Co; and x is in the range of 0<x<30.
Claim 2
Dependent Claim
85 words
A magnetoresistance effect element, comprising: a substrate; an exchange coupled film, formed on said substrate, comprising an antiferromagnetic layer and a ferromagnetic layer at least part of which is laminated with said antiferromagnetic layer; electrodes for providing an electric current to said ferromagnetic layer, wherein said antiferromagnetic layer comprises Cr 100-x M x , where M is at least one selected from the group consisting of Ga, In, Cu, Rh, Pt, Pd, Ag, Os, Ir, and Co; and x is in the range of 0<x<30.
Claim 3
Dependent Claim
30 words
The magnetoresistance effect element as set forth in claim 1, wherein said electrodes comprise at least one selected from the group consisting of Cu, Ag, Au, A1 and alloys thereof.
Claim 4
Dependent Claim
18 words
The magnetoresistance effect element as set forth in claim 1, wherein x is in the range of 1≦x≦10.
Claim 5
Dependent Claim
14 words
The magnetoresistance effect element as set forth in claim 1, wherein M is Co.
Claim 6
Dependent Claim
18 words
The magnetoresistance effect element as set forth in claim 4, wherein x is in the range of 1≦x≦10.
Claim 7
Dependent Claim
30 words
The magnetoresistance effect element as set forth in claim 1, wherein M is at least one selected from the group consisting of Cu, Rh, Pt, Pd, Ag, Os, and Ir.
Claim 8
Dependent Claim
18 words
The magnetoresistance effect element as set forth in claim 6, wherein x is in the range of 1≦x≦10.
Claim 9
Dependent Claim
24 words
The magnetoresistance effect element as set forth in claim 1, wherein said antiferromagnetic layer has a Neel temperature in the range of 100°-500° C.
Claim 10
Dependent Claim
25 words
The magnetoresistance effect element as set forth in claim 1, wherein a thickness of said antiferromagnetic layer is larger than that of said ferromagnetic layer.
Claim 11
Dependent Claim
68 words
The magnetoresistance effect element as set forth in claim 1, further comprising: an interlayer disposed at an interface of said antiferromagnetic layer and said ferromagnetic layer, said interlayer being made of at least one selected from the group consisting of a γ-Mn alloy, a Co-Cr alloy, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, and Ir, wherein the thickness of said interlayer is 5 nm or less.
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