US5548555A
Expired / Lapsed
US
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Method and circuit for repairing defect in a semiconductor memory device
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-04-11
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Granted: 1996-08-20
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Expires: 2015-04-11
Abstract
Abstract A method and a circuit for repairing defect by substituting a redundant memory cell for a defective memory cell in the semiconductor memory device. The circuit comprises charging nodes connected parallel to a number of electrical fuses; a device for outputting a storage signal of a defective address in response to an external control signal; a device for providing current to the charging node in response to the storage signal of the defective address; a redundant sense amplifier for outputting a redundant block driving signal to substitute a defective address in response to a logic level of the charging node; and a controller for decoding an address signal provided from the outside of the memory device so that a current path is formed in a selected fuse and the fuse is blew by current provided from the charging node, the controller being activated by the storage signal of the defective address.
Inventors
- 👤 Sung-Soo Lee
- 👤 Jin-Ki Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:17
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/785; G11C29/787; G11C29/04; G11C29/08; G11C29/12; G11C29/18; G11C29/24
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
167 words
A defective address storage circuit of a semiconductor memory device comprising: a plurality of charging nodes connected in parallel, each charging node connected to a plurality of electrical fuses; a circuit which outputs a defective address storage signal in response to an external control signal; a current source input for supplying current to a selected one of said charging nodes in response to said defective address storage signal; a redundant sense amplifier connected to each of said charging nodes for outputting a redundant block driving signal indicating that a defective address should be substituted when said charging node connected thereto is at a predetermined logic level during a normal access operation; and a control circuit which decodes an externally generated address signal and sequentially creates a plurality of current paths for a a plurality of selected fuses so that only one fuse is blown at a time by current provided from said selected one charging node, said control circuit being activated by said defective address storage signal.
Claim 2
Dependent Claim
167 words
A defective address storage circuit of a semiconductor memory device comprising: a plurality of charging nodes connected in parallel, each charging node connected to a plurality of electrical fuses; a circuit which outputs a defective address storage signal in response to an external control signal; a current source input for supplying current to a selected one of said charging nodes in response to said defective address storage signal; a redundant sense amplifier connected to each of said charging nodes for outputting a redundant block driving signal indicating that a defective address should be substituted when said charging node connected thereto is at a predetermined logic level during a normal access operation; and a control circuit which decodes an externally generated address signal and sequentially creates a plurality of current paths for a a plurality of selected fuses so that only one fuse is blown at a time by current provided from said selected one charging node, said control circuit being activated by said defective address storage signal.
Claim 3
Dependent Claim
23 words
A defective address storage circuit according to claim 1, wherein each of said address signals are provided through an address signal providing pin.
Claim 4
Independent Claim
136 words
A method for storing a defective address of a semiconductor memory device having a plurality of charging nodes capable of being charged to a first voltage, each of said charging nodes coupled to a second voltage through N fuses capable of storing an N-bit-address signal designating a defective cell, said method comprising the steps of: providing said first voltage to a selected one of said charging nodes by decoding first location information from one of said N-bit address signals generated externally; and providing said first voltage to said plurality of fuses connected to said selected charging node by decoding second position information from said one of said N-bit address signals generated externally so that said first voltage is applied to only one of said N fuses at a time by sequentially varying said second location information.
Claim 5
Independent Claim
136 words
A method for storing a defective address of a semiconductor memory device having a plurality of charging nodes capable of being charged to a first voltage, each of said charging nodes coupled to a second voltage through N fuses capable of storing an N-bit-address signal designating a defective cell, said method comprising the steps of: providing said first voltage to a selected one of said charging nodes by decoding first location information from one of said N-bit address signals generated externally; and providing said first voltage to said plurality of fuses connected to said selected charging node by decoding second position information from said one of said N-bit address signals generated externally so that said first voltage is applied to only one of said N fuses at a time by sequentially varying said second location information.
Claim 6
Dependent Claim
59 words
A defective address storage circuit according to claim 1 wherein said current source input includes a plurality of transistors, each transistor having a current path associated with one of said charging nodes, each of said transistors being controlled by charging node selection signal derived from a portion of said externally generated address signal and said defective address storage signal.
Claim 7
Dependent Claim
19 words
A defective address storage circuit according to claim 1 wherein each of said electrical fuses is made of polysilicon.
Claim 8
Dependent Claim
63 words
A defective address storage circuit according to claim 1 wherein said control circuit includes a control transistor disposed between each of said charging nodes and each of said electrical fuses, said control circuit sequentially turning on each of said transistors associated with said selected charging node so that said first voltage is applied to only one of said N fuses at a time.
Claim 9
Dependent Claim
46 words
A method according to claim 3 wherein said step of providing said first voltage to a selected one of said charging nodes applies a charging node selection signal to a selected current source input transistor, said charging node selection signal obtained from said first location information.
Claim 10
Dependent Claim
67 words
A method according to claim 3 wherein said step of providing said first voltage controls application of said first voltage using a control transistor disposed between each of said charging nodes and each of said electrical fuses so that only one of said control transistors is selected at a time, each of said control transistors being controlled by a control signal derived from said second position information.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-20 | 2000-02-19 | 2000-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-20 | 2004-02-19 | 2004-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-20 | 2008-02-19 | 2008-08-20 | $7700.00 | Window Closed / Lapsed |