Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
106 words
An optical link apparatus comprising a link unit to be coupled to an optical fiber Cable, a light receiving device for converting an optical Signal entered from said optical fiber into an electrical signal, and a receiver circuit for processing the electrical signal from said light receiving device, said optical link apparatus being integrally molded with a plastic so that one end of said link unit is exposed to the outside; wherein said light receiving device, and a bipolar transistor constituting at least a part of said receiver circuit are monolithically integrated on a semiconductor substrate and installed at one end of said optical link unit.
Claim 2
Dependent Claim
106 words
An optical link apparatus comprising a link unit to be coupled to an optical fiber Cable, a light receiving device for converting an optical Signal entered from said optical fiber into an electrical signal, and a receiver circuit for processing the electrical signal from said light receiving device, said optical link apparatus being integrally molded with a plastic so that one end of said link unit is exposed to the outside; wherein said light receiving device, and a bipolar transistor constituting at least a part of said receiver circuit are monolithically integrated on a semiconductor substrate and installed at one end of said optical link unit.
Claim 3
Dependent Claim
16 words
An optical link apparatus according to claim 1, wherein said semiconductor substrate is made of InP.
Claim 4
Dependent Claim
17 words
An optical link apparatus according to claim 1, wherein said bipolar transistor is a heterojunction bipolar transistor.
Claim 5
Dependent Claim
172 words
An optical link apparatus according to claim 3, wherein said heterojunction bipolar transistor comprises a collector portion comprising a first semiconductor layer formed on said substrate and having a first conduction type, and a first electrode formed on a surface of said first semiconductor layer, a base portion comprising a second semiconductor layer formed on said collector portion and having a second conduction type, and a second electrode formed on a surface of said second semiconductor layer, and an emitter portion comprising a third semiconductor layer formed on a surface of said base portion opposing to a junction between said base portion and said collector portion and having the first conduction type; a part of said third semiconductor layer on a first region of a surface of said base portion has a first thickness; and said third semiconductor layer on a second region of the surface region of said base portion, except said first region and the second electrode formed region, has a thickness so as to be depleted under normal operation.
Claim 6
Dependent Claim
17 words
An optical link apparatus according to claim 1, wherein said light receiving device is a pin photodiode.
Claim 7
Dependent Claim
23 words
An optical link apparatus according to claim 5, wherein said pin photodiode comprises semiconductor layers deposited on said substrate into a mesa shape.
Claim 8
Dependent Claim
29 words
An optical link apparatus according to claim 5, wherein pn junction of said pin photodiode is homojunction; and heterojunction is not presented in the vicinity of the pn junction.
Claim 9
Dependent Claim
72 words
An optical link apparatus according to claim 1 further comprising a transmitter comprising a link unit to be coupled to an optical fiber cable, a light emitting device for emitting an optical signal to said fiber cable, and a transmitter circuit for driving said light emitting device; wherein said light emitting device, and a bipolar transistor constituting at least a part of said transmitter circuit are monolithically integrated with a semiconductor substrate.
Claim 10
Dependent Claim
98 words
An optical link apparatus comprising a link unit to be coupled to an optical fiber cable, a light emitting device for emitting an optical signal to said optical fiber cable, and a transmitter circuit for driving said light emitting device, said optical link apparatus being integrally molded with a plastic so that one end of said link unit is exposed to the outside; wherein said light emitting device, and a bipolar transistor constituting at least a part of said transmitter circuit are monolithically integrated on a semiconductor substrate and installed at one end of said optical link unit.
Claim 11
Dependent Claim
98 words
An optical link apparatus comprising a link unit to be coupled to an optical fiber cable, a light emitting device for emitting an optical signal to said optical fiber cable, and a transmitter circuit for driving said light emitting device, said optical link apparatus being integrally molded with a plastic so that one end of said link unit is exposed to the outside; wherein said light emitting device, and a bipolar transistor constituting at least a part of said transmitter circuit are monolithically integrated on a semiconductor substrate and installed at one end of said optical link unit.
Claim 12
Dependent Claim
16 words
An optical link apparatus according to claim 9, wherein said semiconductor substrate is made of InP.
Claim 13
Dependent Claim
17 words
An optical link apparatus according to claim 9, wherein said bipolar transistor is a heterojunction bipolar transistor.
Claim 14
Dependent Claim
173 words
An optical link apparatus according to claim 11, wherein said heterojunction bipolar transistor comprises a collector portion comprising a first semiconductor layer formed on said substrate and having a first conduction type, and a first electrode formed on a surface of said first semiconductor layer, a base portion comprising a second semiconductor layer formed on said collector portion and having a second conduction type, and a second electrode formed on a surface of said second semiconductor layer, and an emitter portion comprising a third semiconductor layer formed on a surface of said base portion opposing to a junction surface between said base portion and said collector portion and having the first conduction type; a part of said third semiconductor layer on a first region of a surface of said base portion has a first thickness; and said third semiconductor layer on a second region of the surface region of said base portion, except said first region and the second electrode formed region, has a thickness so as to be depleted under normal operation.
Claim 15
Dependent Claim
81 words
An optical link apparatus according to claim 9 further comprising a receiver comprising a link unit to be coupled to an optical fiber cable, a light receiving device for converting an optical signal entered from said optical fiber into an electrical signal, and a receiver circuit for processing the electrical signal from said light receiving device; wherein said light receiving device, and a bipolar transistor constituting at least a part of said receiver circuit are monolithically integrated with a semiconductor substrate.