Semiconductor device having a plurality of impurity layers

Claim 2

A semiconductor device, comprising: a semiconductor substrate having a main surface classified into an element forming region and an element isolating region; an isolating insulating film formed in the element isolating region surrounding said element forming region; a first impurity layer having peak impurity concentration at a position of a first depth from the main surface of said element forming region; a second impurity layer having peak impurity concentration at a position of a second depth from a lower surface of said isolating insulating film, its extension is in a direction parallel to the substrate surface terminating near a position immediately below a boundary between said element forming region and said element isolating region; a third impurity layer having peak impurity concentration at a position of a third depth which is deeper than said first depth from the main surface of said element forming region; and a fourth impurity layer having peak impurity concentration at a position of a fourth depth which is deeper than said third depth from main surface of said element forming region, wherein said third impurity layer and said fourth impurity layer extend to a region positioned below said second impurity layer, said third impurity layer has peak impurity concentration at a position of a fifth depth deeper than said second depth from the lower surface of said isolating insulating film, and said fourth impurity layer has peak impurity concentration at a position of a sixth depth deeper than said fifth depth from the lower surface of said isolating insulating film.

Claim 3

The semiconductor device according to claim 1, wherein among said first, second, third and fourth impurity layers, the third impurity layer has the lowest value of peak impurity concentration.

Claim 4

The semiconductor device according to claim 1, wherein said first depth is at most 0.2 μm, said second depth is at most 0.1 μm, said third depth is within a range of from 0.7 μm to 0.8 μm, and said fourth depth is within a range of from 1.4 μm to 1.7 μm.

Claim 5

The semiconductor device according to claim 1, wherein said fifth depth is within a range of from 0.3 μm to 0.4 μm, and said sixth depth is within a range of from 1.0 μm to 1.3 μm.

Claim 6

The semiconductor device according to claim 1, wherein said first, second, third and fourth impurity layers are of the same conductivity type.

Claim 7

The semiconductor device according to claim 1, wherein said first impurity layer is formed to adjust threshold voltage of a transistor, said second impurity layer is formed to improve ability of isolating elements from each other, said third impurity layer is formed to adjust substrate constant and junction capacitance, and said fourth impurity layer is formed to lower well resistance.

Claim 8

A semiconductor device, comprising: a semiconductor substrate having a main surface classified into an element forming region and an element isolating region; an isolating insulating film formed in the element isolating region surrounding said element forming region; a first impurity layer having peak impurity concentration at a position of a first depth from the main surface of said element forming region; a second impurity layer having peak impurity concentration at a position of a second depth from a lower surface of said isolating insulating film, its extension is in a direction parallel to the substrate surface terminating near a position immediately below a boundary between said element forming region and said element isolating region; a third impurity layer having peak impurity concentration at a position of a third depth which is deeper than said first depth from the main surface of said element forming region; a fourth impurity layer having peak impurity concentration at a position of a fourth depth which is deeper than said third depth from main surface of said element forming region; and a fifth impurity layer near a portion immediately below a boundary between said element forming region and said element isolating region and overlapping a terminating portion of said second impurity layer; wherein said third impurity layer and said fourth impurity layer extend to a region positioned below said second impurity layer, said third impurity layer has peak impurity concentration at a position of a fifth depth deeper than said second depth from the lower surface of said isolating insulating film, and said fourth impurity layer has peak impurity concentration at a position of a sixth depth deeper than said fifth depth from the lower surface of said isolating insulating film.

Claim 9

A semiconductor device, comprising: a semiconductor substrate having a main surface classified into an element forming region and an element isolating region; an isolating insulating film formed in the element isolating region surrounding said element forming region; a first impurity layer having peak impurity concentration at a position of a first depth from the main surface of said element forming region; a second impurity layer having peak impurity concentration at a position of a second depth from a lower surface of said isolating insulating film, its extension is in a direction parallel to the substrate surface terminating near a position immediately below a boundary between said element forming region and said element isolating region; a third impurity layer having peak impurity concentration at a position of a third depth which is deeper than said first depth from the main surface of said element forming region; a fourth impurity layer having peak impurity concentration at a position of a fourth depth which is deeper than said third depth from main surface of said element forming region; and a fifth impurity layer near a portion immediately below a boundary between said element forming region and said element isolating region and overlapping a terminating portion of said second impurity layer; wherein said third impurity layer and said fourth impurity layer extend to a region positioned below said second impurity layer, said third impurity layer has peak impurity concentration at a position of a fifth depth deeper than said second depth from the lower surface of said isolating insulating film, and said fourth impurity layer has peak impurity concentration at a position of a sixth depth deeper than said fifth depth from the lower surface of said isolating insulating film.

Claim 10

The semiconductor device according to claim 7, wherein said fifth impurity layer is formed to improve ability for isolating elements from each other.

Claim 11

The semiconductor device according to claim 7, wherein said fifth impurity layer extends obliquely toward the main surface of said element forming region.