US5543359A
Expired / Lapsed
US
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Method of forming a titanium silicide film involved in a semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1994-12-22
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Granted: 1996-08-06
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Expires: 2014-12-22
Abstract
Abstract A method of forming a silicate glass film including phosphorus on a titanium silicide film is provided wherein a silicate glass film including phosphorus is formed on a titanium silicide film and thereafter the silicate glass film is subjected to a heat treatment at a temperature in the range from 650° C. to 950° C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of the silicate glass film and suppress a cohesion reaction of the titanium silicide film.
Inventors
- 👤 Tadahiko Horiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/097; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
84 words
A method of forming a silicate glass film including phosphorus on a titanium silicide film comprising the steps of: forming a silicate glass film including phosphorus on a titanium silicide film; and subjecting said silicate glass film to a heat treatment at a temperature in the range from 650° C. to 950° C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of said silicate glass film and suppress a cohesion reaction of said titanium silicide film.
Claim 2
Independent Claim
84 words
A method of forming a silicate glass film including phosphorus on a titanium silicide film comprising the steps of: forming a silicate glass film including phosphorus on a titanium silicide film; and subjecting said silicate glass film to a heat treatment at a temperature in the range from 650° C. to 950° C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of said silicate glass film and suppress a cohesion reaction of said titanium silicide film.
Claim 3
Dependent Claim
19 words
The method as claimed in claim 1, wherein said titanium silicide film has a thickness less than 80 nanometers.
Claim 4
Dependent Claim
23 words
The method as claimed in claim 1, wherein said heat treatment is carried out at a temperature of 850° C. for 40 seconds.
Claim 5
Dependent Claim
19 words
The method as claimed in claim 3, wherein said titanium silicide film has a thickness less than 40 nanometers.
Claim 6
Dependent Claim
19 words
The method as claimed in claim 3, wherein said titanium silicide film has a thickness less than 20 nanometers.
Claim 7
Dependent Claim
19 words
The method as claimed in claim 1, wherein said silicate glass film comprises a boron phosphoric silicate glass film.
Claim 8
Dependent Claim
18 words
The method as claimed in claim 1, wherein said silicate glass film comprises a phosphoric silicate glass film.
Claim 9
Dependent Claim
24 words
The method as claimed in claim 1, further comprising the step of planarizing a surface of the silicate glass film after said heat treatment.
Claim 10
Dependent Claim
22 words
The method as claimed in claim 8, wherein said planarizing step comprises a polishing of said surface of said silicate glass film.
Claim 11
Dependent Claim
28 words
The method as claimed in claim 8, wherein said planarizing step comprises a application of silicon on said surface of said silicate glass film and subsequent etch-back thereof.
Claim 12
Dependent Claim
24 words
The method as claimed in claim 1, further comprising the step of planarizing a surface of the silicate glass film before said heat treatment.
Claim 13
Dependent Claim
22 words
The method as claimed in claim 11, wherein said planarizing step comprises a polishing of said surface of said silicate glass film.
Claim 14
Dependent Claim
28 words
The method as claimed in claim 11, wherein said planarizing step comprises a application of silicon on said surface of said silicate glass film and subsequent etch-back thereof.
Claim 15
Dependent Claim
19 words
The method as claimed in claim 1, wherein said-heat treatment is carried out by use of a halogen lamp.
Claim 16
Dependent Claim
20 words
The method as claimed in claim 1, wherein said titanium silicide film is formed by a sputtering on titanium silicide.
Claim 17
Dependent Claim
48 words
The method as claimed in claim 1, wherein said titanium silicide film is formed by a deposition of a titanium film on a film including silicon and subsequent heat treatment to cause an atomic reaction between silicon atoms and titanium atoms to thereby form a titanium silicide film.
Claim 18
Independent Claim
108 words
A method of forming a silicate glass film including phosphorus on a titanium silicide film involved in semiconductor integrated circuits, said method comprising the steps of: forming a titanium silicide film on an insulation film; forming a silicate glass film including phosphorus on a titanium silicide film; subjecting said silicate glass film to a heat treatment at a temperature in the range from 650° C. to 950° C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of said silicate glass film and suppress a cohesion reaction of said titanium silicide film; and planarizing a surface of said silicate glass film.
Claim 19
Independent Claim
108 words
A method of forming a silicate glass film including phosphorus on a titanium silicide film involved in semiconductor integrated circuits, said method comprising the steps of: forming a titanium silicide film on an insulation film; forming a silicate glass film including phosphorus on a titanium silicide film; subjecting said silicate glass film to a heat treatment at a temperature in the range from 650° C. to 950° C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of said silicate glass film and suppress a cohesion reaction of said titanium silicide film; and planarizing a surface of said silicate glass film.
Claim 20
Dependent Claim
19 words
The method as claimed in claim 17, wherein said titanium silicide film has a thickness less than 80 nanometers.
Claim 21
Dependent Claim
23 words
The method as claimed in claim 17, wherein said heat treatment is carried out at a temperature of 850° C. for 40 seconds.
Claim 22
Dependent Claim
19 words
The method as claimed in claim 19, wherein said titanium silicide film has a thickness less than 40 nanometers.
Claim 23
Dependent Claim
19 words
The method as claimed in claim 19, wherein said titanium silicide film has a thickness less than 20 nanometers.
Claim 24
Dependent Claim
19 words
The method as claimed in claim 17, wherein said silicate glass film comprises a boron phosphoric silicate glass film.
Claim 25
Dependent Claim
18 words
The method as claimed in claim 17, wherein said silicate glass film comprises a phosphoric silicate glass film.
Claim 26
Dependent Claim
22 words
The method as claimed in claim 23, wherein said planarizing step comprises a polishing of said surface of said silicate glass film.
Claim 27
Dependent Claim
28 words
The method as claimed in claim 23, wherein said planarizing step comprises a application of silicon on said surface of said silicate glass film and subsequent etch-back thereof.
Claim 28
Dependent Claim
24 words
The method as claimed in claim 17, further comprising the step of planarizing a surface of the silicate glass film before said heat treatment.
Claim 29
Dependent Claim
22 words
The method as claimed in claim 26, wherein said planarizing step comprises a polishing of said surface of said silicate glass film.
Claim 30
Dependent Claim
28 words
The method as claimed in claim 26, wherein said planarizing step comprises a application of silicon on said surface of said silicate glass film and subsequent etch-back thereof.
Claim 31
Dependent Claim
20 words
The method as claimed in claim 17, wherein said heat treatment is carried out by use of a halogen lamp.
Claim 32
Dependent Claim
20 words
The method as claimed in claim 17, wherein said titanium silicide film is formed by a sputtering on titanium silicide.
Claim 33
Dependent Claim
48 words
The method as claimed in claim 17, wherein said titanium silicide film is formed by a deposition of a titanium film on a film including silicon and subsequent heat treatment to cause an atomic reaction between silicon atoms and titanium atoms to thereby form a titanium silicide film.
References Cited (Backward Citations)
GB2126418A
Cited
EP0155699A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-06 | 2000-02-05 | 2000-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-06 | 2004-02-05 | 2004-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-06 | 2008-02-05 | 2008-08-06 | $7700.00 | Window Closed / Lapsed |