US5541432A
Expired / Lapsed
US
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Silicon on insulator field effect transistors
Assignee: Panasonic Holdings Corp
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Filing: 1994-11-21
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Granted: 1996-07-30
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Expires: 2014-11-21
Abstract
Abstract In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region, and a drain region may also be arranged on the same plane, and the latter MOS device is arranged adjacent to the gate electrode. This type of device may be constructed as a CMOS type device. In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel, and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.
Inventors
- 👤 Kazuhiko Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:41
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/62; H10D30/01; H10D30/021; H10D30/024; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/853
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
187 words
A semiconductor device, comprising: a first insulator film formed on a substrate; a first source region of a conduction type; a first drain region of the conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane on the first insulator film with same thickness; a second source region of the conduction type; a second drain region of the conduction type; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged adjacent to the first and second channel regions, the gate electrode being formed in the same plane and with same thickness as the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode; and the first source, drain and channel regions, the second source, drain and channel regions, and the gate electrode are arranged above the first insulator film.
Claim 2
Dependent Claim
187 words
A semiconductor device, comprising: a first insulator film formed on a substrate; a first source region of a conduction type; a first drain region of the conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane on the first insulator film with same thickness; a second source region of the conduction type; a second drain region of the conduction type; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged adjacent to the first and second channel regions, the gate electrode being formed in the same plane and with same thickness as the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode; and the first source, drain and channel regions, the second source, drain and channel regions, and the gate electrode are arranged above the first insulator film.
Claim 3
Dependent Claim
193 words
A semiconductor device, comprising: a first insulator film formed on a substrate; a first source region of a first conduction type; a first drain region of the first conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane on the first insulator film with same thickness; a second source region of a second conduction type different from the first conduction type; a second drain region of the second conduction type; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged adjacent to the first and second channel regions, the gate electrode being formed in the same plane as the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode; wherein the first source, drain and channel regions, the second source, drain and channel regions, and the gate electrode are arranged above the first insulator film.
Claim 4
Dependent Claim
193 words
A semiconductor device, comprising: a first insulator film formed on a substrate; a first source region of a first conduction type; a first drain region of the first conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane on the first insulator film with same thickness; a second source region of a second conduction type different from the first conduction type; a second drain region of the second conduction type; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged adjacent to the first and second channel regions, the gate electrode being formed in the same plane as the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode; wherein the first source, drain and channel regions, the second source, drain and channel regions, and the gate electrode are arranged above the first insulator film.
Claim 5
Dependent Claim
161 words
A semiconductor device, comprising: a first source region of a first conduction type; a first drain region of the first conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane with same thickness; an insulator film formed above the first source, channel and drain regions; a second source region of a second conduction type different from the first conduction type formed above the insulating film; a second drain region of the second conduction type formed above the insulating film; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged vertically adjacent to the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode.
Claim 6
Dependent Claim
161 words
A semiconductor device, comprising: a first source region of a first conduction type; a first drain region of the first conduction type; a first channel region connecting the first source and drain regions, the first source, drain and channel region being formed in the same plane with same thickness; an insulator film formed above the first source, channel and drain regions; a second source region of a second conduction type different from the first conduction type formed above the insulating film; a second drain region of the second conduction type formed above the insulating film; a second channel region connecting the second source and drain regions, the second source, drain and channel region being formed on the first insulator film with same thickness; a gate electrode arranged vertically adjacent to the first and second channel regions; and a gate oxide film interposed between the first channel region and the gate electrode and between the second channel region and the gate electrode.
Claim 7
Dependent Claim
98 words
A semiconductor device comprising: a semiconductor substrate; an insulator layer formed on the substrate; a source region; a drain region; a channel region connecting the source and drain regions, wherein the channel, source and drain regions are formed on the insulator layer, and further wherein a part of the source, drain and channel regions is connected to the semiconductor substrate; a gate electrode arranged adjacent to the channel region, the gate electrode being formed on the same insulator layer as the channel region; and a gate oxide film interposed vertically between the channel region and the gate electrode.
Claim 8
Dependent Claim
98 words
A semiconductor device comprising: a semiconductor substrate; an insulator layer formed on the substrate; a source region; a drain region; a channel region connecting the source and drain regions, wherein the channel, source and drain regions are formed on the insulator layer, and further wherein a part of the source, drain and channel regions is connected to the semiconductor substrate; a gate electrode arranged adjacent to the channel region, the gate electrode being formed on the same insulator layer as the channel region; and a gate oxide film interposed vertically between the channel region and the gate electrode.
References Cited (Backward Citations)
US4523213A
Cited
JPH01194437A
Cited
US4996574A
Cited
JPH03108766A
Cited
US5095347A
Cited
US5315143A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |