US5532600A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of and apparatus for evaluating reliability of metal interconnect
Assignee: Sony Corp
•
Filing: 1994-10-27
•
Granted: 1996-07-02
•
Expires: 2014-10-27
Abstract
Abstract Disclosed is a method of and an apparatus for evaluating the reliability of metal interconnects. It is capable of performing the evaluation under such a testing condition as to reproduce an actual operating environment, that is, under the testing condition of simultaneously accelerating electromigration and stress-induced migration, thereby evaluating failures conventionally missed to be evaluated. In particular, this method is applicable for evaluating the reliability of metal interconnects of semiconductor devices, and which includes the steps of performing a constant-temperature storage test I for interconnect reliability evaluation at a temperature over a specified temperature for a specified time; and applying a current to the interconnect and simultaneously performing a test II of measuring a voltage of the interconnect.
Inventors
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:25
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2855; G01R31/2856; G01R31/2858; G01R27/00; G01R27/02; G01R31/2853
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
144 words
A method of evaluating the reliability of a metal interconnect of a semiconductor device, comprising: a step of measuring the start-up resistance of said metal interconnect of a test piece of semiconductor device; a step of performing a constant-temperature storage test for said test piece of semiconductor device for a time period made by measuring a resistance of said metal interconnect after being left at a temperature higher than 25° C. for a specified time and comparing said resistance of said metal interconnect with the start-up resistance of said metal interconnect; and a step of applying a current to said metal interconnect of said test piece of semiconductor device subjected to said constant-temperature storage test, and simultaneously performing a test of measuring the resistance of said metal interconnect, and comparing said resistance of said metal interconnect with said start-up resistance of said metal interconnect.
Claim 2
Independent Claim
144 words
A method of evaluating the reliability of a metal interconnect of a semiconductor device, comprising: a step of measuring the start-up resistance of said metal interconnect of a test piece of semiconductor device; a step of performing a constant-temperature storage test for said test piece of semiconductor device for a time period made by measuring a resistance of said metal interconnect after being left at a temperature higher than 25° C. for a specified time and comparing said resistance of said metal interconnect with the start-up resistance of said metal interconnect; and a step of applying a current to said metal interconnect of said test piece of semiconductor device subjected to said constant-temperature storage test, and simultaneously performing a test of measuring the resistance of said metal interconnect, and comparing said resistance of said metal interconnect with said start-up resistance of said metal interconnect.
Claim 3
Dependent Claim
25 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said test piece of semiconductor device is a semiconductor wafer.
Claim 4
Dependent Claim
30 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said test piece of semiconductor device is a cut-off semiconductor wafer sealed in a package.
Claim 5
Dependent Claim
29 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said constant-temperature storage test is made at a temperature of 100° C. or more.
Claim 6
Dependent Claim
29 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein the current density of said applied current is 1×10 6 A/cm 2 or more.
Claim 7
Dependent Claim
47 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said constant-temperature storage test is made by repeating a step of measuring a resistance of said metal interconnect after being left at said temperature higher than 25° C. for a specified time.
Claim 8
Dependent Claim
52 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said constant temperature storage test is made by repeating a step of measuring a resistance of said metal interconnect at about 25° C. after being left at said temperature higher than 25° C. for a specified time.
Claim 9
Dependent Claim
54 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said constant-temperature storage test is made by repeating a step of measuring a resistance of said metal interconnect at said temperature higher than 25° C. after being left at said temperature higher than 25° C. for a specified time.
Claim 10
Dependent Claim
55 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said test of simultaneously measuring said resistance of said metal interconnect applying said current to said metal interconnect of said test piece of semiconductor device subjected to said constant-temperature storage test is performed at a temperature higher than 25° C.
Claim 11
Dependent Claim
56 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said test of simultaneously measuring said resistance of said metal interconnect applying said current to said metal interconnect of said test piece of semiconductor device subjected to said constant-temperature storage test is performed at a temperature of 200° C. or more.
Claim 12
Dependent Claim
50 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said start-up resistance and said resistance of said metal interconnect measured in said constant-temperature storage test are calculated based on each current value measured when applying a voltage to said test piece of semiconductor device.
Claim 13
Dependent Claim
49 words
A method of evaluating the reliability of a metal interconnect according to claim 1, wherein said resistance of said metal interconnect measured in said test simultaneously performing applying said current is calculated based on a voltage measured when applying a constant current to said test piece of semiconductor device.
Claim 14
Independent Claim
132 words
An apparatus for evaluating the reliability of a metal interconnect of a semiconductor device, comprising: a first test chamber having a first susceptor for mounting a test piece, and first measuring means for measuring a resistance of said test piece mounted on said first susceptor, said test piece being a semiconductor device having a metal interconnect; a first power source connected to said first chamber; a second test chamber having a second susceptor for mounting said test piece, means for heating said second susceptor, and second measuring means for measuring a voltage of said metal interconnect; a second power source connected to said second chamber for supplying a constant current to said second chamber; and a carriage chamber for carrying said test piece between said first test chamber and said second chamber.
Claim 15
Independent Claim
132 words
An apparatus for evaluating the reliability of a metal interconnect of a semiconductor device, comprising: a first test chamber having a first susceptor for mounting a test piece, and first measuring means for measuring a resistance of said test piece mounted on said first susceptor, said test piece being a semiconductor device having a metal interconnect; a first power source connected to said first chamber; a second test chamber having a second susceptor for mounting said test piece, means for heating said second susceptor, and second measuring means for measuring a voltage of said metal interconnect; a second power source connected to said second chamber for supplying a constant current to said second chamber; and a carriage chamber for carrying said test piece between said first test chamber and said second chamber.
Claim 16
Dependent Claim
29 words
An apparatus for evaluating the reliability of a metal interconnect according to claim 13, wherein said first test chamber has means for keeping the temperature within said chamber constant.
Claim 17
Dependent Claim
40 words
An apparatus for evaluating the reliability of a metal interconnect according to claim 13, wherein said first test chamber constitutes a resistance measuring section for stress-induced migration test, and second test chamber constitutes a constant-temperature section for stress-induced migration test.
Claim 18
Dependent Claim
24 words
An apparatus for evaluating the reliability of a metal interconnect according to claim 13, wherein said second test chamber constitutes an electromigration test chamber.
Claim 19
Dependent Claim
41 words
An apparatus for evaluating the reliability of a metal interconnect of a semiconductor device according to claim 13, wherein said second power source supplies a current with a high density of at least 1×10 6 A/cm 2 to said second chamber.
Claim 20
Dependent Claim
31 words
An apparatus for evaluating the reliability of a metal interconnect of a semiconductor device according to claim 13, wherein said first power source supplies a constant voltage to said first chamber.
References Cited (Backward Citations)
US3676775A
Cited
US4520448A
Cited
US4945302A
Cited
US5057441A
Cited
US5239270A
Cited
US5260668A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |