Quantum well semiconductor laser device structure

Claim 2

In a quantum well semiconductor laser, a structure comprising a semiconductor multi-quantum well active layer in which laser light is produced, the multi-quantum well active layer comprising three InGaAs layers, each InGaAs layer having a thickness of 8 nm, and two InP layers, each InP layer having a thickness of 10 nm, laminated alternatingly with each other; and a multiple quantum barrier light confinement structure comprising a superlattice structure and a tunneling preventing layer disposed between the superlattice structure and the active layer, the superlattice structure comprising a plurality of well layers, each well layer comprising a first semiconductor having an energy band gap, and a plurality of barrier layers, each barrier layer comprising a second semiconductor having a larger energy band gap than the first semiconductor, the well layers and barrier layers being alternatingly laminated with each other, the tunneling preventing layer preventing charge carriers in the active layer from tunneling into the superlattice structure, the light confinement structure producing an energy barrier higher than an energy barrier inherent to the well layers and the barrier layers for charge carriers injected into the active layer and producing a refractive index distribution that concentrates an electric field in the active layer, the light confinement structure being disposed in contact with the active layer.

Claim 3

In a quantum well semiconductor laser, a structure comprising a semiconductor multi-quantum well active layer in which laser light is produced, the multi-quantum well active layer comprising three InGaAs layers, each InGaAs layer having a thickness of 8 nm, and two InGaAsP layers, each InGaAsP layer having a thickness of 10 nm, laminated alternatingly with each other; and a multiple quantum barrier light confinement structure comprising a superlattice structure and a tunneling preventing layer disposed between the superlattice structure and the active layer, the superlattice structure comprising a plurality of well layers, each well layer comprising a first semiconductor having an energy band gap, and a plurality of barrier layers, each barrier layer comprising a second semiconductor having a larger energy band gap than the first semiconductor, the well layers and barrier layers being alternatingly laminated with each other, the tunneling preventing layer preventing charge carriers in the active layer from tunneling into the superlattice structure, the light confinement structure producing an energy barrier higher than an energy barrier inherent to the well layers and the barrier layers for charge carriers injected into the active layer and producing a refractive index distribution that concentrates an electric field in the active layer, the light confinement structure being disposed in contact with the active layer.

Claim 4

In a quantum well semiconductor laser, a structure comprising a semiconductor multi-quantum well active layer in which laser light is produced, the multi-quantum well active layer comprising three InGaAs layers, each InGaAs layer having a thickness of 8 nm, and two InGaAsP layers, each InGaAsP layer having a thickness of 10 nm, laminated alternatingly with each other; and a multiple quantum barrier light confinement structure comprising a superlattice structure and a tunneling preventing layer disposed between the superlattice structure and the active layer, the superlattice structure comprising a plurality of well layers, each well layer comprising a first semiconductor having an energy band gap, and a plurality of barrier layers, each barrier layer comprising a second semiconductor having a larger energy band gap than the first semiconductor, the well layers and barrier layers being alternatingly laminated with each other, the tunneling preventing layer preventing charge carriers in the active layer from tunneling into the superlattice structure, the light confinement structure producing an energy barrier higher than an energy barrier inherent to the well layers and the barrier layers for charge carriers injected into the active layer and producing a refractive index distribution that concentrates an electric field in the active layer, the light confinement structure being disposed in contact with the active layer.

Claim 5

In a quantum well semiconductor laser, a structure including a multi-quantum well structure active layer comprising a plurality of InGaAs well layers alternatingly laminated with a plurality of barrier layers, each barrier layer including two InP tunneling preventing layers each 5 nm thick and sandwiching two InGaAs layers each 2.1 nm thick that sandwich an InP layer 2.7 nm thick, the barrier layers producing an energy barrier higher than an energy barrier inherent to the semiconductor layers of the barrier layer for charge carriers injected into the well layers, the tunneling preventing layers preventing charge carriers in the well layers from tunneling into the barrier layers.

Claim 6

In a quantum well semiconductor laser, a structure including a multi-quantum well structure active layer comprising a plurality of InGaAs well layers alternatingly laminated with a plurality of barrier layers, each barrier layer including two InP tunneling preventing layers each 5 nm thick and sandwiching two InGaAs layers each 2.1 nm thick that sandwich an InP layer 2.7 nm thick, the barrier layers producing an energy barrier higher than an energy barrier inherent to the semiconductor layers of the barrier layer for charge carriers injected into the well layers, the tunneling preventing layers preventing charge carriers in the well layers from tunneling into the barrier layers.

Claim 7

In a quantum well semiconductor laser, a structure including a multi-quantum well structure active layer comprising a plurality of InGaAs well layers alternatingly laminated with a plurality of barrier layers, each barrier layer including two InP tunneling preventing layers each 5 nm thick and sandwiching four InGaAs layers each 2.1 nm thick that are alternatingly laminated with three InP layer each 2.7 nm thick, the barrier layers producing an energy barrier higher than an energy barrier inherent to the semiconductor layers of the barrier layer for charge carriers injected into the well layers and the tunneling preventing layers preventing charge carriers in the well layers from tunneling into the barrier layers.

Claim 8

In a quantum well semiconductor laser, a structure including a multi-quantum well structure active layer comprising a plurality of InGaAs well layers alternatingly laminated with a plurality of barrier layers, each barrier layer including two InP tunneling preventing layers each 5 nm thick and sandwiching four InGaAs layers each 2.1 nm thick that are alternatingly laminated with three InP layer each 2.7 nm thick, the barrier layers producing an energy barrier higher than an energy barrier inherent to the semiconductor layers of the barrier layer for charge carriers injected into the well layers and the tunneling preventing layers preventing charge carriers in the well layers from tunneling into the barrier layers.

Claim 9

The quantum well laser structure of claim 1 wherein the tunneling preventing layer comprises InP and has a thickness of 20 nm and the superlattice structure includes ten well layers, each well layer having a thickness of 2.1 nm, and nine barrier layers, each barrier layer having a thickness of 2.7 nm laminated alternatingly with each other.

Claim 10

The quantum well laser structure of claim 2 wherein the tunneling preventing layer comprises InP and has a thickness of 20 nm and the superlattice structure includes ten well layers, each well layer having a thickness of 2.1 nm, and nine barrier layers, each barrier layer having a thickness of 2.7 nm laminated alternatingly with each other.