US5528548A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Voltage converter of semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1995-02-07
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Granted: 1996-06-18
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Expires: 2015-02-07
Abstract
Abstract A semiconductor memory is provided which includes a voltage converter supplying an internal supply voltage in proportion to the greater one of two reference voltages to a circuit in the semiconductor memory. The voltage converter includes a circuit which is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. The voltage converter includes MOS transistors and differential amplifiers interconnected with one another, as well as a voltage dividing circuit. The memory also includes a word line booster for boosting the internal supply voltage.
Inventors
- 👤 Masashi Horiguchi
- 👤 Ryoichi Hori
- 👤 Kiyoo Itoh
- 👤 Yoshinobu Nakagome
- 👤 Masakazu Aoki
- 👤 Hitoshi Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:30
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/693; G; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
181 words
A semiconductor memory comprising: a memory cell having a first MOS transistor; a data line coupled to a drain or a source of the first MOS transistor; a word line coupled to a gate of the first MOS transistor; and a voltage converter for converting an external supply voltage which is supplied from outside of said semiconductor memory, into an internal supply voltage which is supplied to said data line, wherein said voltage converter comprises: a first circuit for supplying a first reference voltage whose magnitude has a predetermined dependence on a magnitude of the external supply voltage when the external supply voltage is larger than a predetermined voltage; a second circuit for supplying a second reference voltage whose magnitude has a greater dependence on the magnitude of the external supply voltage than the predetermined dependence of the magnitude of the first reference voltage; and a third circuit coupled to receive both the first reference voltage and the second reference voltage, for outputting a voltage in proportion to a larger one of the first reference voltage and the second reference voltage.
Claim 2
Dependent Claim
181 words
A semiconductor memory comprising: a memory cell having a first MOS transistor; a data line coupled to a drain or a source of the first MOS transistor; a word line coupled to a gate of the first MOS transistor; and a voltage converter for converting an external supply voltage which is supplied from outside of said semiconductor memory, into an internal supply voltage which is supplied to said data line, wherein said voltage converter comprises: a first circuit for supplying a first reference voltage whose magnitude has a predetermined dependence on a magnitude of the external supply voltage when the external supply voltage is larger than a predetermined voltage; a second circuit for supplying a second reference voltage whose magnitude has a greater dependence on the magnitude of the external supply voltage than the predetermined dependence of the magnitude of the first reference voltage; and a third circuit coupled to receive both the first reference voltage and the second reference voltage, for outputting a voltage in proportion to a larger one of the first reference voltage and the second reference voltage.
Claim 3
Dependent Claim
61 words
The semiconductor memory according to claim 1, wherein said third circuit further comprises a comparator which compares the first reference voltage with the second reference voltage to generate a comparison output; and a switch for connecting either one of the first reference voltage and the second reference voltage to an output terminal in accordance with the comparison output of said comparator.
Claim 4
Dependent Claim
151 words
The semiconductor memory according to claim 1, wherein said third circuit further comprises: a node; a second MOS transistor having a source-drain path coupled between the external supply voltage and said node; a third MOS transistor having a source-drain path coupled between the external supply voltage and said node; a first differential amplifier having an output coupled to a gate of said second MOS transistor; a second differential amplifier having an output coupled to a gate of said third MOS transistor; and a buffer coupled between said node and said data line, wherein an inverting input of said first differential amplifier is coupled to receive said first reference voltage, wherein an inverting input of said second differential amplifier is coupled to receive said second reference voltage, and wherein both a non-inverting input of said first differential amplifier and a non-inverting input of said second differential amplifier are coupled to said node.
Claim 5
Dependent Claim
20 words
The semiconductor memory according to claim 3, wherein said third circuit further comprises a current source coupled to said node.
Claim 6
Dependent Claim
30 words
The semiconductor memory according to claim 3, wherein said third circuit further comprises a voltage dividing means coupled between said node and said non-inverting input of said first differential amplifier.
Claim 7
Dependent Claim
30 words
The semiconductor memory according to claim 3, wherein said third circuit further comprises a voltage dividing means coupled between said node and said non-inverting input of said second differential amplifier.
Claim 8
Dependent Claim
20 words
The semiconductor memory according to claim 3, further comprising a sense amplifier coupled between said node and said data line.
Claim 9
Dependent Claim
16 words
A semiconductor memory according to claim 7, wherein said semiconductor memory is a random access memory.
Claim 10
Dependent Claim
17 words
A semiconductor memory according to claim 8, wherein said semiconductor memory is a dynamic random access memory.
Claim 11
Dependent Claim
20 words
The semiconductor memory according to claim 3, further comprising a precharge circuit coupled between said node and said data line.
Claim 12
Dependent Claim
31 words
The semiconductor memory according to claim 10, further comprising a voltage generating circuit, coupled between said node and said precharge circuit, for generating a voltage proportional to said internal supply voltage.
Claim 13
Dependent Claim
16 words
A semiconductor memory according to claim 11, wherein said semiconductor memory is a random access memory.
Claim 14
Dependent Claim
17 words
A semiconductor memory according to claim 12, wherein said semiconductor memory is a dynamic random access memory.
Claim 15
Dependent Claim
217 words
A semiconductor memory comprising: a memory cell having a first MOS transistor; a data line coupled to a drain or a source of the first MOS transistor; a word line coupled to a gate of the first MOS transistor; and a voltage converter for converting an external supply voltage which is supplied from outside of said semiconductor memory, into an internal supply voltage, wherein said voltage converter comprises: a first circuit for supplying a first reference voltage whose magnitude has a predetermined dependence on a magnitude of the external supply voltage when the external supply voltage is larger than a predetermined voltage; a second circuit for supplying a second reference voltage whose magnitude has a greater dependence on the magnitude of the external supply voltage than the predetermined dependence of the magnitude of the first reference voltage; a third circuit coupled to receive both the first reference voltage and the second reference voltage, for outputting a voltage in proportion to a larger one of the first reference voltage and the second reference voltage; and a word line booster coupled between an output of said third circuit and said word line for boosting said internal supply voltage to a boosted voltage having a magnitude which is a predetermined amount larger than the magnitude of said internal supply voltage.
Claim 16
Dependent Claim
217 words
A semiconductor memory comprising: a memory cell having a first MOS transistor; a data line coupled to a drain or a source of the first MOS transistor; a word line coupled to a gate of the first MOS transistor; and a voltage converter for converting an external supply voltage which is supplied from outside of said semiconductor memory, into an internal supply voltage, wherein said voltage converter comprises: a first circuit for supplying a first reference voltage whose magnitude has a predetermined dependence on a magnitude of the external supply voltage when the external supply voltage is larger than a predetermined voltage; a second circuit for supplying a second reference voltage whose magnitude has a greater dependence on the magnitude of the external supply voltage than the predetermined dependence of the magnitude of the first reference voltage; a third circuit coupled to receive both the first reference voltage and the second reference voltage, for outputting a voltage in proportion to a larger one of the first reference voltage and the second reference voltage; and a word line booster coupled between an output of said third circuit and said word line for boosting said internal supply voltage to a boosted voltage having a magnitude which is a predetermined amount larger than the magnitude of said internal supply voltage.
Claim 17
Dependent Claim
60 words
The semiconductor memory according to claim 14, wherein said third circuit further comprises: a comparator which compares the first reference voltage with the second reference voltage to generate a comparison output; and a switch for connecting either one of the first reference voltage and the second reference voltage to an output terminal in accordance with the comparison of said comparator.
Claim 18
Dependent Claim
152 words
The semiconductor memory according to claim 14, wherein said third circuit further comprises: a node; a second MOS transistor having a source-drain path coupled between the external supply voltage and said node; a third MOS transistor having a source-drain path coupled between the external supply voltage and said node; a first differential amplifier having an output coupled to a gate of said second MOS transistor; a second differential amplifier having an output coupled to a gate of said third MOS transistor; and a buffer coupled between said node and said word line booster, wherein an inverting input of said first differential amplifier is coupled to receive said first reference voltage, wherein an inverting input of said second differential amplifier is coupled to receive a second reference voltage, and wherein both a non-inverting input of said first differential amplifier and a non-inverting input of said second differential amplifier are coupled to said node.
Claim 19
Dependent Claim
16 words
A semiconductor memory according to claim 16, wherein said semiconductor memory is a random access memory.
Claim 20
Dependent Claim
17 words
A semiconductor memory according to claim 17, wherein said semiconductor memory is a dynamic random access memory.
Claim 21
Dependent Claim
20 words
The semiconductor memory according to claim 14, wherein said third circuit further comprises a current source coupled to said node.
Claim 22
Dependent Claim
30 words
The semiconductor memory according to claim 14, wherein said third circuit further comprises a voltage dividing means coupled between said node and said non-inverting input of said first differential amplifier.
Claim 23
Dependent Claim
29 words
The semiconductor memory according to claim 14, wherein said third circuit further comprises a voltage dividing means between said node and said non-inverting input of said second differential amplifier.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |