US5528538A
Expired / Lapsed
US
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Voltage generating circuit in semiconductor integrated circuit
Assignee: Hitachi Ltd
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Filing: 1993-06-30
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Granted: 1996-06-18
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Expires: 2013-06-30
Abstract
Abstract A voltage generating circuit in a semiconductor integrated circuit driven by two sorts of power supply voltages, includes a unit for generating plural sorts of signals; a unit for selecting one of the plural sorts of signals in response to an operation mode of the semiconductor integrated circuit; and a pumping unit for producing either a first predetermined voltage higher than the high power supply voltage among the two sorts of power supply voltages, or a second predetermined voltage lower than the low power supply voltage by a pumping operation based upon the signal selected by the selecting unit.
Inventors
- 👤 Toshiyuki Sakuta
- 👤 Tomohiro Suzuki
- 👤 Yuriko Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:05
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/143
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
179 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage and outputting a boosted voltage having an absolute value larger than that of said power supply voltage; and a power supply voltage turn-ON detecting circuit coupled to said selector, wherein said power supply voltage turn-ON detecting circuit controls said selector so that said selector outputs said first pulse signal to said input terminal of said pumping circuit in response to a detection by the detecting circuit that said power supply voltage is turned ON.
Claim 2
Dependent Claim
179 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage and outputting a boosted voltage having an absolute value larger than that of said power supply voltage; and a power supply voltage turn-ON detecting circuit coupled to said selector, wherein said power supply voltage turn-ON detecting circuit controls said selector so that said selector outputs said first pulse signal to said input terminal of said pumping circuit in response to a detection by the detecting circuit that said power supply voltage is turned ON.
Claim 3
Dependent Claim
32 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 1, wherein said second oscillating circuit outputs said second pulse signal to said second input terminal of said selector constantly.
Claim 4
Dependent Claim
59 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 1, further comprising: a boosted voltage detecting circuit receiving said boosted voltage, said boosted voltage detecting circuit controlling said selector so that said selector outputs said second pulse signal to said input terminal of said pumping circuit when said boosted voltage is higher than a predetermined voltage.
Claim 5
Dependent Claim
42 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 3, wherein said first oscillating circuit does not output said first pulse signal when said boosted voltage detecting circuit detects that said boosted voltage is higher than said predetermined voltage.
Claim 6
Dependent Claim
169 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage and outputting a boosted voltage having an absolute value larger than that of said power supply voltage; and a boosted voltage detecting circuit coupled to receive said boosted voltage, said boosted voltage detecting circuit controlling said selector so that said selector outputs said second pulse signal to said input terminal of said pumping circuit when said boosted voltage is higher than a predetermined voltage.
Claim 7
Dependent Claim
169 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage and outputting a boosted voltage having an absolute value larger than that of said power supply voltage; and a boosted voltage detecting circuit coupled to receive said boosted voltage, said boosted voltage detecting circuit controlling said selector so that said selector outputs said second pulse signal to said input terminal of said pumping circuit when said boosted voltage is higher than a predetermined voltage.
Claim 8
Dependent Claim
32 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 5, wherein said second oscillating circuit outputs said second pulse signal to said second input terminal of said selector constantly.
Claim 9
Dependent Claim
42 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 5, wherein said first oscillating circuit does not output said first pulse signal when said boosted voltage detecting circuit detects that said boosted voltage is higher than said predetermined voltage.
Claim 10
Dependent Claim
164 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage having a positive polarity and outputting a negative polarity voltage; and a power supply voltage detecting circuit coupled to said selector, wherein said power supply voltage detecting circuit controls said selector so that said selector outputs said first pulse signal to said input terminal of said pumping circuit when said power supply voltage is larger than a predetermined voltage.
Claim 11
Dependent Claim
164 words
A voltage generating circuit in a semiconductor integrated circuit comprising: a first oscillating circuit outputting a first pulse signal having a first frequency; a second oscillating circuit outputting a second pulse signal having a second frequency which is lower than said first frequency; a selector having a first input terminal coupled to said first oscillating circuit for receiving said first pulse signal, a second input terminal coupled to said second oscillating circuit for receiving said second pulse signal and an output terminal; a pumping circuit having an input terminal coupled to said output terminal of said selector, said pumping circuit receiving a power supply voltage having a positive polarity and outputting a negative polarity voltage; and a power supply voltage detecting circuit coupled to said selector, wherein said power supply voltage detecting circuit controls said selector so that said selector outputs said first pulse signal to said input terminal of said pumping circuit when said power supply voltage is larger than a predetermined voltage.
Claim 12
Dependent Claim
24 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 8, wherein said negative polarity voltage is a substrate back-gate bias voltage.
Claim 13
Dependent Claim
30 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 8, wherein said power supply voltage detecting circuit detects a burn-in test mode of said semiconductor integrated circuit.
Claim 14
Dependent Claim
37 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 10, wherein said semiconductor integrated circuit is positioned into an oven at a high temperature when said semiconductor integrated circuit is a burn-in test mode.
Claim 15
Dependent Claim
62 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 8, further comprising a power supply voltage turn-ON detecting circuit coupled to said selector, wherein said power supply voltage turn-ON detecting circuit controls said selector so that said selector outputs said first pulse signal to said input terminal of said pumping circuit when said power supply voltage is turned ON.
Claim 16
Dependent Claim
32 words
A voltage generating circuit in a semiconductor integrated circuit according to claim 8, wherein said second oscillating circuit outputs said second pulse signal to said second input terminal of said selector constantly.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |