Field emitter with focusing ridges situated to sides of gate

Claim 2

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; a set of at least one electron-emissive element situated in at least one aperture extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a gate electrode situated over the insulating layer, at least one opening extending through the gate electrode to expose each electron-emissive element; and a pair of focusing ridges situated over the insulating layer on opposite sides of, and spaced laterally apart from, the gate electrode, the focusing ridges being sufficiently close to the gate electrode to control trajectories of electrons emitted from each electron-emissive element, the focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate electrode above the insulating layer.

Claim 3

A structure as in claim 1 wherein the average height of the focusing ridges above the insulating layer is at least one tenth of the spacing between the focusing ridges.

Claim 4

A structure as in claim 1 further including an electrically conductive section situated above, and spaced apart from, the gate electrode and focusing ridges, the conductive section having an electron-receptive site for receiving electrons emitted from each electron-emissive element.

Claim 5

A structure as in claim 3 wherein the electron-receptive site emits light when struck by electrons from each electron-emissive element.

Claim 6

A structure as in claim 1 wherein the set of at least one electron-emissive element comprises a multiplicity of electron-emissive elements, each situated in a different aperture extending through the insulating layer.

Claim 7

A structure as in claim 1 wherein each ridge comprises a metal bar.

Claim 8

A structure as in claim 6 wherein each ridge includes a highly resistive electrically conductive coating over top and side surfaces of the metal bar.

Claim 9

A structure as in claim 1 wherein each ridge comprises a dielectric bar.

Claim 10

A structure as in claim 8 wherein each ridge includes a metal film on top of the dielectric bar.

Claim 11

A structure as in claim 8 wherein each ridge includes a metal coating over top and side surfaces of the dielectric bar.

Claim 12

A structure as in claim 8 wherein each ridge includes a highly resistive electrically conductive coating over top and side surfaces of the dielectric bar.

Claim 13

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; an array of laterally separated sets of electron-emissive elements, each set comprising at least one electron-emissive element situated in at least one opening extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a plurality of electrically conductive gate lines extending over the insulating layer largely in a primary direction, openings extending through the gate lines to expose the electron-emissive elements; and a plurality of focusing ridges extending over the insulating layer largely in the primary direction, the focusing ridges being interdigitated with the gate lines such that each gate line is largely situated between, and laterally spaced apart from, a different consecutive pair of the focusing ridges, the focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate lines above the insulating layer.

Claim 14

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; an array of laterally separated sets of electron-emissive elements, each set comprising at least one electron-emissive element situated in at least one opening extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a plurality of electrically conductive gate lines extending over the insulating layer largely in a primary direction, openings extending through the gate lines to expose the electron-emissive elements; and a plurality of focusing ridges extending over the insulating layer largely in the primary direction, the focusing ridges being interdigitated with the gate lines such that each gate line is largely situated between, and laterally spaced apart from, a different consecutive pair of the focusing ridges, the focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate lines above the insulating layer.

Claim 15

A structure as in claim 12 wherein the average height of the focusing ridges above the insulating layer is at least one tenth of the average spacing between the focusing ridges.

Claim 16

A structure as in claim 12 further including: an electrically conductive section situated above, and spaced apart from, the gate lines and focusing ridges, the conductive section comprising an array of electron-receptive sites respectively corresponding to the sets of electron-emissive elements for receiving electrons emitted from the electron-emissive elements; and a support section that keeps the conductive section spaced apart from the gate lines and focusing ridges.

Claim 17

A structure as in claim 14 wherein the electron-receptive sites emit light when struck by electrons from the electron-emissive elements.

Claim 18

A structure as in claim 14 wherein the emitter electrode comprises a plurality of emitter lines extending in a further direction substantially different from the primary direction.

Claim 19

A structure as in claim 16 wherein the primary and further directions are laterally orthogonal to one another.

Claim 20

A structure as in claim 12 wherein the ridges are electrically conductive.

Claim 21

A structure as in claim 18 further including means for electrically interconnecting the focusing ridges in order to apply substantially the same voltage to all of them.

Claim 22

A structure as in claim 18 further including means for simultaneously providing different voltages to different ones of the focusing ridges.

Claim 23

A structure as in claim 12 further including an additional plurality of focusing ridges situated over the insulating layer, extending in a further direction substantially different from the primary direction, meeting the first-mentioned focusing ridges, and crossing over the gate lines.

Claim 24

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; an array of laterally separated sets of electron-emissive elements, each set comprising at least one electron-emissive element situated in at least one opening extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a plurality of electrically conductive gate lines extending over the insulating layer largely in a primary direction, openings extending through the gate lines to expose the electron-emissive elements; a plurality of first focusing ridges extending over the insulating layer largely in the primary direction, the first focusing ridges being interdigitated with the gate lines such that each gate line is largely situated between, and laterally spaced apart from, a different consecutive pair of the first focusing ridges, the first focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate lines above the insulating layer; and a plurality of second focusing ridges extending over the insulating layer in a further direction substantially different from the primary direction, meeting the first focusing ridges and crossing over the gate lines.

Claim 25

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; an array of laterally separated sets of electron-emissive elements, each set comprising at least one electron-emissive element situated in at least one opening extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a plurality of electrically conductive gate lines extending over the insulating layer largely in a primary direction, openings extending through the gate lines to expose the electron-emissive elements; a plurality of first focusing ridges extending over the insulating layer largely in the primary direction, the first focusing ridges being interdigitated with the gate lines such that each gate line is largely situated between, and laterally spaced apart from, a different consecutive pair of the first focusing ridges, the first focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate lines above the insulating layer; and a plurality of second focusing ridges extending over the insulating layer in a further direction substantially different from the primary direction, meeting the first focusing ridges and crossing over the gate lines.

Claim 26

A structure as in claim 22 further including; an electrically conductive section situated above, and spaced apart from, the gate lines and focusing ridges, the conductive section comprising an array of electron-receptive sites respectively corresponding to the sets of electron-emissive elements for receiving electrons emitted from the electron-emissive elements; and a support section that keeps the conductive section spaced apart from the gate lines and focusing ridges.

Claim 27

A structure as in claim 23 wherein the electron-receptive sites emit light when struck by electrons from the electron-emissive elements.

Claim 28

A structure as in claim 23 wherein the emitter electrode comprises a plurality of emitter lines extending in the further direction.

Claim 29

A structure as in claim 25 wherein the primary and further directions are laterally orthogonal to one another.

Claim 30

A structure as in claim 22 wherein the ridges are electrically conductive.

Claim 31

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; a set of at least one electron-emissive element situated in at least one aperture extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a gate electrode situated over the insulating layer, at least one opening extending through the gate electrode to expose each electron-emissive element; a pair of first focusing ridges situated over the insulating layer on opposite sides of, and spaced laterally apart from, the gate electrode, the first focusing ridges being sufficiently close to the gate electrode to control trajectories of electrons emitted from each electron-emissive element, the first focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate electrode above the insulating layer; and a pair of second focusing ridges situated over the insulating layer, meeting the first focusing ridges, and crossing over the gate electrode.

Claim 32

A structure comprising: an emitter electrode; an electrically insulating layer situated over the emitter electrode; a set of at least one electron-emissive element situated in at least one aperture extending through the insulating layer down to the emitter electrode such that each electron-emissive element contacts the emitter electrode; a gate electrode situated over the insulating layer, at least one opening extending through the gate electrode to expose each electron-emissive element; a pair of first focusing ridges situated over the insulating layer on opposite sides of, and spaced laterally apart from, the gate electrode, the first focusing ridges being sufficiently close to the gate electrode to control trajectories of electrons emitted from each electron-emissive element, the first focusing ridges extending to an average height above the insulating layer of at least ten times the average height of the gate electrode above the insulating layer; and a pair of second focusing ridges situated over the insulating layer, meeting the first focusing ridges, and crossing over the gate electrode.

Claim 33

A structure as in claim 28 further including an electrically conductive section situated above, and spaced apart from, the gate electrode and focusing ridges, the conductive section having an electron-receptive site for receiving electrons emitted from each electron-emissive element.

Claim 34

A structure as in claim 29 wherein the electron-receptive site emits light when struck by electrons from each electron-emissive element.

Claim 35

A structure as in claim 28 wherein the set of at least one electron-emissive element comprises a multiplicity of electron-emissive elements, each situated in a different aperture extending through the insulating layer.

Claim 36

A structure as in claim 28 wherein each ridge comprises a metal bar.

Claim 37

A structure as in claim 32 wherein each ridge includes a highly resistive electrically conductive coating over top and side surfaces of the metal bar.

Claim 38

A structure as in claim 28 wherein each ridge comprises a dielectric bar.

Claim 39

A structure as in claim 34 wherein each ridge includes a metal film on top of the dielectric bar.

Claim 40

A structure as in claim 34 wherein each ridge includes a metal coating over top and side surfaces of the dielectric bar.

Claim 41

A structure as in claim 34 wherein each ridge includes a highly resistive electrically conductive coating over top and side surfaces of the dielectric bar.