US5522966A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dry etching process for semiconductor
Assignee: Denso Corp
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Filing: 1993-11-17
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Granted: 1996-06-04
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Expires: 2013-11-17
Abstract
Abstract A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.
Inventors
- 👤 Atsushi Komura
- 👤 Yoshikazu Sakano
- 👤 Kenji Kondo
- 👤 Keiichi Kon
- 👤 Tetsuhiko Sanbei
- 👤 Shoji Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:35
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
105 words
A process for forming trenches on a surface of a semiconductor substrate by plasma etching of Si using a gas mixture, said gas mixture comprising HBr, SF 6 and N 2 , in a dry etching device, wherein the flow rate of HBr is 10 to 100 SCCM, the flow rate of SF 6 is 2 to 10 SCCM, the flow rate of N 2 is 3 to 10, under a pressure of the gas mixture of 50 to 150 mTorr, at a high frequency power of the plasma of 200 to 600 watts, and under a magnetic field strength of 0 to 100 gauss.
Claim 2
Dependent Claim
105 words
A process for forming trenches on a surface of a semiconductor substrate by plasma etching of Si using a gas mixture, said gas mixture comprising HBr, SF 6 and N 2 , in a dry etching device, wherein the flow rate of HBr is 10 to 100 SCCM, the flow rate of SF 6 is 2 to 10 SCCM, the flow rate of N 2 is 3 to 10, under a pressure of the gas mixture of 50 to 150 mTorr, at a high frequency power of the plasma of 200 to 600 watts, and under a magnetic field strength of 0 to 100 gauss.
Claim 3
Dependent Claim
21 words
A process according to claim 1, wherein the trench side wall angle is set at an angle of 60 to 90°.
Claim 4
Dependent Claim
24 words
A process according to claim 2, wherein the trench side wall angle is made smaller by increasing the flow rate of N 2 .
Claim 5
Dependent Claim
24 words
A process according to claim 2, wherein the trench side wall angle is made smaller by decreasing the flow rate of SF 6 .
Claim 6
Dependent Claim
55 words
A process according to claim 1, wherein during etching, N 2 is decomposed to form N radicals in the plasma, which react in the gas phase with Si or etching products to form SiN, which covers the side wall, prevents the progress of excessive etching of the side wall, and controls the side wall angle.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-04 | 1999-12-04 | 2000-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-04 | 2003-12-04 | 2004-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-04 | 2007-12-04 | 2008-06-04 | $7700.00 | Window Closed / Lapsed |