US5518944A
Expired / Lapsed
US
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MOS transistor and its fabricating method
Assignee: Panasonic Holdings Corp
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Filing: 1994-09-19
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Granted: 1996-05-21
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Expires: 2014-09-19
Abstract
Abstract An object of the subject invention is to offer a MOS semiconductor device capable of suppressing hot carrier degradation, improving driving capabilities and also enabling miniaturization to the submicron region and smaller; and methods for its fabrication. By forming the gate electrode 5 through the medium of gate oxide film 4 on one main surface of the first conductivity type semiconductor substrate 1 between the second conductivity type low concentration diffusion layers 3, the effective channel length is made roughly equal to the gate length, and miniaturization to the submicron region and smaller is accomplished. Also, by forming the second conductivity type diffusion layer 7A on the sides of the gate electrode 5 through the medium of the thin insulating film 6 to be above the low concentration diffusion layer 3 and further contacting the low concentration diffusion layer 3, the high electrical field within the low concentration diffusion layer 3 is sufficiently ameliorated, generation of hot carriers is suppressed, and resistance to degradation is improved. Moreover, by controlling the high resistance second conductivity typetype diffusion layer 7 A at the sides of the gate electrode 5, the source resistance is decreased and driving capabilities are improved. At the same time the contact region of the source-drain electrode is miniaturized.
Inventors
- 👤 Akira Hiroki
- 👤 Shinji Odanaka
- 👤 Kazumi Kurimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:41
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/601; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01354; H10D64/017; H10D64/021; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0147; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
247 words
A method of fabricating a MOS semiconductor device comprising: forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, selectively forming a gate electrode above the gate insulating film, the gate electrode having two side, and ion implanting a low concentration diffusion region of a second conductivity type into the surface of the semiconductor substrate using the gate electrode as a mask; oxidizing the surface of the semiconductor substrate to form an oxide film on the surface of the semiconductor substrate and the sides of the gate electrodes; completely removing, by dry etching, the oxide film formed on the surface of the semiconductor substrate and from other than above and on the two sides of the gate electrode; depositing a polycrystalline silicon film over the surface of the semiconductor substrate, wherein the oxide film is retained above and on the two sides of the gate electrode; dry etching the polycrystalline silicon film to leave the polycrystalline silicon film self-aligned with the gate electrode and covering the two sides of the gate electrode; ion implanting a dopant of the second conductivity type into the surface of the semiconductor substrate in order to diffuse the dopant into the polycrystalline silicon film remaining on the sides of the gate electrode, to form two sidewall diffusion regions of the second conductivity type on the respective sides of the gate electrode; and forming in the low concentration diffusion region, a high concentration source-drain diffusion region.
Claim 2
Independent Claim
247 words
A method of fabricating a MOS semiconductor device comprising: forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, selectively forming a gate electrode above the gate insulating film, the gate electrode having two side, and ion implanting a low concentration diffusion region of a second conductivity type into the surface of the semiconductor substrate using the gate electrode as a mask; oxidizing the surface of the semiconductor substrate to form an oxide film on the surface of the semiconductor substrate and the sides of the gate electrodes; completely removing, by dry etching, the oxide film formed on the surface of the semiconductor substrate and from other than above and on the two sides of the gate electrode; depositing a polycrystalline silicon film over the surface of the semiconductor substrate, wherein the oxide film is retained above and on the two sides of the gate electrode; dry etching the polycrystalline silicon film to leave the polycrystalline silicon film self-aligned with the gate electrode and covering the two sides of the gate electrode; ion implanting a dopant of the second conductivity type into the surface of the semiconductor substrate in order to diffuse the dopant into the polycrystalline silicon film remaining on the sides of the gate electrode, to form two sidewall diffusion regions of the second conductivity type on the respective sides of the gate electrode; and forming in the low concentration diffusion region, a high concentration source-drain diffusion region.
Claim 3
Independent Claim
238 words
A method of fabricating a MOS semiconductor device comprising: forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, selectively forming a gate electrode above the gate insulating film, the gate electrode having two sides, ion implanting into the surface of the semiconductor substrate, using the gate electrode as a mask, to form a low concentration diffusion region of a second conductivity type; depositing an insulating film on the surface of the semiconductor substrate and on two sides of the gate electrode; completely removing, by dry etching, the insulating film formed on the surface of the semiconductor substrate and from other than above and on the two sides of the gate electrode; depositing a polycrystalline silicon film on the surface of the semiconductor substrate, wherein the insulating film is retained above and on the two sides of the gate electrode; dry etching the polycrystalline silicon film to leave the polycrystalline silicon film self-aligned with the gate electrode and covering the two sides of the gate electrode; ion implanting a dopant of the second conductivity type into the surface of the semiconductor substrate to form two sidewall diffusion regions of the second conductivity type on the respective sides of the gate electrode by diffusing the dopant into the polycrystalline silicon film remaining on the sides of the gate electrode; and, forming a high concentration source-drain region in the low concentration diffusion region.
Claim 4
Independent Claim
238 words
A method of fabricating a MOS semiconductor device comprising: forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, selectively forming a gate electrode above the gate insulating film, the gate electrode having two sides, ion implanting into the surface of the semiconductor substrate, using the gate electrode as a mask, to form a low concentration diffusion region of a second conductivity type; depositing an insulating film on the surface of the semiconductor substrate and on two sides of the gate electrode; completely removing, by dry etching, the insulating film formed on the surface of the semiconductor substrate and from other than above and on the two sides of the gate electrode; depositing a polycrystalline silicon film on the surface of the semiconductor substrate, wherein the insulating film is retained above and on the two sides of the gate electrode; dry etching the polycrystalline silicon film to leave the polycrystalline silicon film self-aligned with the gate electrode and covering the two sides of the gate electrode; ion implanting a dopant of the second conductivity type into the surface of the semiconductor substrate to form two sidewall diffusion regions of the second conductivity type on the respective sides of the gate electrode by diffusing the dopant into the polycrystalline silicon film remaining on the sides of the gate electrode; and, forming a high concentration source-drain region in the low concentration diffusion region.
Claim 5
Independent Claim
267 words
A method of fabricating a MOS semiconductor device comprising: forming a gate electrode on a surface of a semiconductor substrate of a first conductivity type, through a gate oxide film, and forming a high concentration first polycrystalline silicon film above the gate electrode through a first insulating film, the gate electrode having two sides; forming by ion implantation a low concentration diffusion region of a second conductivity type on the surface of the semiconductor substrate, using the high concentration first polycrystalline silicon film as a mask; forming a second insulating film over the surface of the semiconductor substrate; dry etching the second insulating film to leave the second insulating film covering only the gate electrode and the two sides of the gate electrode, wherein the high concentration first polycrystalline silicon film is retained above the gate electrode; depositing a second polycrystalline silicon film over the surface of the semiconductor substrate and diffusing a plurality of doping atoms, by thermal treatment, from the high concentration first polycrystalline silicon film to the said second polycrystalline silicon film; dry etching the second polycrystalline silicon film and the high concentration first polycrystalline silicon film, retaining the second polycrystalline silicon film on the two sides of the gate electrode; ion implanting a second conductivity type dopant into the surface of the semiconductor substrate to form two sidewall diffusion regions on the respective sides of the gate electrode by diffusing the second conductivity type dopant into the second polycrystalline silicon film remaining on the two sides of the gate electrode; and forming a high concentration source-drain region in the low concentration diffusion region.
Claim 6
Independent Claim
267 words
A method of fabricating a MOS semiconductor device comprising: forming a gate electrode on a surface of a semiconductor substrate of a first conductivity type, through a gate oxide film, and forming a high concentration first polycrystalline silicon film above the gate electrode through a first insulating film, the gate electrode having two sides; forming by ion implantation a low concentration diffusion region of a second conductivity type on the surface of the semiconductor substrate, using the high concentration first polycrystalline silicon film as a mask; forming a second insulating film over the surface of the semiconductor substrate; dry etching the second insulating film to leave the second insulating film covering only the gate electrode and the two sides of the gate electrode, wherein the high concentration first polycrystalline silicon film is retained above the gate electrode; depositing a second polycrystalline silicon film over the surface of the semiconductor substrate and diffusing a plurality of doping atoms, by thermal treatment, from the high concentration first polycrystalline silicon film to the said second polycrystalline silicon film; dry etching the second polycrystalline silicon film and the high concentration first polycrystalline silicon film, retaining the second polycrystalline silicon film on the two sides of the gate electrode; ion implanting a second conductivity type dopant into the surface of the semiconductor substrate to form two sidewall diffusion regions on the respective sides of the gate electrode by diffusing the second conductivity type dopant into the second polycrystalline silicon film remaining on the two sides of the gate electrode; and forming a high concentration source-drain region in the low concentration diffusion region.
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