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US5518674A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming thin film flexible interconnect for infrared detectors

Assignee: DRS Network and Imaging Systems LLC
•
Filing: 1992-09-25
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Granted: 1996-05-21
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Expires: 2012-09-25
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Abstract

Abstract A method of forming an interconnect including the steps of providing a processing substrate, adhering a first electrically insulating layer to the substrate, forming an electrically conductive pattern on the first electrically insulating layer, forming a second electrically insulating layer adhered to the first electrically insulating layer with the electrically conductive pattern between the first and second electrically insulating layers, forming connections to the pattern and then removing the adhered first and second electrically insulating layers and the electrically conductive pattern from the substrate to provide a freestanding film.

Inventors

  • 👤 Donald A. Powell
  • 👤 Susan V. Bagen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 14:55
CPC Classifications
H; H10; H10W; H10W40/00; H10F; H10F77/00; H10F77/60; H10F77/93; H10F77/933; H10W70/00; H10W70/60; H10W70/67; H10W70/688; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/20; H10W72/29; H10W72/50; H10W72/531; H10W72/533; H10W72/534; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W90/00; H10W90/701; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 20
Claim 1
Independent Claim 165 words
The method of forming a flexible electrical interconnect for interconnecting an infrared detector to circuitry comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern by (i) forming vias in said second electrically insulating layer extending to said pattern (ii) depositing conductive material into the vias to contact the electrically conductive pattern; (iii) depositing a patterned metal conductor layer onto the second electrically insulating layer and in contact with the conductive material within the vias; (iv) forming a metal bond pad over the patterned metal conductor layer; and (f) removing said adhered first and second electrically insulating layers and said electrically conductive pattern from said substrate to provide a freestanding film.
Claim 2
Independent Claim 165 words
The method of forming a flexible electrical interconnect for interconnecting an infrared detector to circuitry comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern by (i) forming vias in said second electrically insulating layer extending to said pattern (ii) depositing conductive material into the vias to contact the electrically conductive pattern; (iii) depositing a patterned metal conductor layer onto the second electrically insulating layer and in contact with the conductive material within the vias; (iv) forming a metal bond pad over the patterned metal conductor layer; and (f) removing said adhered first and second electrically insulating layers and said electrically conductive pattern from said substrate to provide a freestanding film.
Claim 3
Dependent Claim 12 words
The method of claim 1 wherein said first layer is a polyimide.
Claim 4
Dependent Claim 23 words
The method of claim 2 wherein said pattern is a layer of chromium over a layer of copper over a layer of chromium.
Claim 5
Dependent Claim 10 words
The method of claim 3 wherein said substrate is silicon.
Claim 6
Dependent Claim 23 words
The method of claim 1 wherein said pattern is a layer of chromium over a layer of copper over a layer of chromium.
Claim 7
Dependent Claim 19 words
The method of claim 1 wherein said removal includes placing said substrate and said first layer in boiling water.
Claim 8
Dependent Claim 45 words
The method of claim 1 further including the step of placing a release layer on said substrate prior to formation of said first electrically insulating layer and said step of removing in step (f) includes placing said substrate in a solvent for said release agent.
Claim 9
Dependent Claim 34 words
The method of claim 1 wherein step (e) includes forming a layer of copper over chromium on the walls of said via and then forming a bond pad thereover extending out of said via.
Claim 10
Dependent Claim 40 words
The method of claim 1 wherein said conductive material is deposited by the step of plating of nickel contacting said conductive pattern and wherein said step of forming a bond pad includes the step of plating gold over said nickel.
Claim 11
Independent Claim 157 words
The method of forming a flexible electrical interconnect for interconnecting an infrared detector to circuitry comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern by (i) forming vias in said second electrically insulating layer extending to said pattern (ii) depositing conductive material into the vias to contact the electrically conductive pattern; (iii) depositing a patterned metal conductor layer onto the second electrically insulating layer and in contact with the conductive material within the vias; (iv) forming a metal bond pad over the patterned metal conductor layer; and (f) removing a portion of said substrate to divide said substrate into plural separated portions.
Claim 12
Independent Claim 157 words
The method of forming a flexible electrical interconnect for interconnecting an infrared detector to circuitry comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern by (i) forming vias in said second electrically insulating layer extending to said pattern (ii) depositing conductive material into the vias to contact the electrically conductive pattern; (iii) depositing a patterned metal conductor layer onto the second electrically insulating layer and in contact with the conductive material within the vias; (iv) forming a metal bond pad over the patterned metal conductor layer; and (f) removing a portion of said substrate to divide said substrate into plural separated portions.
Claim 13
Dependent Claim 10 words
The method of claim 10 wherein said substrate is aluminum.
Claim 14
Dependent Claim 20 words
The method of claim 10 wherein said removal includes selectively etching away said aluminum substrate from the remaining structure thereon.
Claim 15
Independent Claim 157 words
A method of forming an interconnect comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern including forming at least one via having walls in said second layer extending to said pattern having an electrically conductive material therein extending to said pattern; and (f) then removing said adhered first and second electrically insulating layers and said electrically conductive .pattern from said substrate to provide a freestanding film; (g) wherein step (e) includes forming a layer of copper over chromium on said walls of said at least one via and then forming a solder bump thereover extending out of said at least one via.
Claim 16
Independent Claim 157 words
A method of forming an interconnect comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern including forming at least one via having walls in said second layer extending to said pattern having an electrically conductive material therein extending to said pattern; and (f) then removing said adhered first and second electrically insulating layers and said electrically conductive .pattern from said substrate to provide a freestanding film; (g) wherein step (e) includes forming a layer of copper over chromium on said walls of said at least one via and then forming a solder bump thereover extending out of said at least one via.
Claim 17
Dependent Claim 10 words
The method of claim 13 wherein said substrate is aluminum.
Claim 18
Independent Claim 171 words
A method of forming an interconnect comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern including forming at least one via having walls in said second layer extending to said pattern having an electrically conductive material therein extending to said pattern; and (f) then removing said adhered first and second electrically insulating layers and said electrically conductive pattern from said substrate to provide a freestanding film; (g) wherein step (e) includes forming an electrically conductive region over and in contact with said pattern and disposed on said walls of said at least one via and then forming a bond pad over said electrically conductive region, said bond pad extending out of said at least one via.
Claim 19
Independent Claim 171 words
A method of forming an interconnect comprising the steps of: (a) providing a processing substrate; (b) adhering a first electrically insulating layer to said substrate; (c) forming an electrically conductive pattern on said first electrically insulating layer; (d) forming a second electrically insulating layer adhered to said first electrically insulating layer with said electrically conductive pattern between said first and second electrically insulating layers; (e) forming connections to said pattern including forming at least one via having walls in said second layer extending to said pattern having an electrically conductive material therein extending to said pattern; and (f) then removing said adhered first and second electrically insulating layers and said electrically conductive pattern from said substrate to provide a freestanding film; (g) wherein step (e) includes forming an electrically conductive region over and in contact with said pattern and disposed on said walls of said at least one via and then forming a bond pad over said electrically conductive region, said bond pad extending out of said at least one via.
Claim 20
Dependent Claim 41 words
The method of claim 15 wherein said electrically conductive region is formed by the step of plating of nickel contacting said conductive pattern and wherein said step of forming a bond pad includes the step of plating gold over said nickel.

References Cited (Backward Citations)

US4480288A Cited
US4709468A Cited
US4770897A Cited
US5151388A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-05-21 1999-11-20 2000-05-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-05-21 2003-11-20 2004-05-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-05-21 2007-11-20 2008-05-21 $7700.00 Window Closed / Lapsed

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