US5506540A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bias voltage generation circuit
Assignee: Toshiba Corp
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Filing: 1994-02-25
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Granted: 1996-04-09
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Expires: 2014-02-25
Abstract
Abstract A bias voltage generation circuit has a bias voltage generation means and a VBB detector. The bias voltage generation means is made up of a charge pump circuit, and a ring oscillator for biasing a P-type region to have a predetermined potential level. The VBB detector detects the bias level of the P-type region and controls the bias generation means. The VBB detector incorporates a bias level detection circuit, and two delay circuits which are controlled on the basis of a signal appearing at an output node N2 of the bias level detection circuit. The ring oscillator is controlled on the basis of outputs of the two delay circuits. One of the two delay circuits has a higher detection level and is therefore less responsive to the signal at the output node N2 than the other delay circuit, but provides a shorter delay time than that provided by the other delay circuit.
Inventors
- 👤 Kiyofumi Sakurai
- 👤 Tohru Furuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:58
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/146; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
118 words
A bias voltage generation circuit comprising: bias voltage generation means for applying a predetermined bias potential to an internal region of a semiconductor substrate; detection means for detecting the bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least first and second delay circuits having first and second bias potential detecting threshold levels, respectively, for controlling the bias voltage generation means, wherein said first bias potential detecting threshold level of said first delay circuit is higher than said second bias potential detecting threshold level of said second delay circuit and said first delay circuit has a shorter delay time than said second delay circuit.
Claim 2
Dependent Claim
118 words
A bias voltage generation circuit comprising: bias voltage generation means for applying a predetermined bias potential to an internal region of a semiconductor substrate; detection means for detecting the bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least first and second delay circuits having first and second bias potential detecting threshold levels, respectively, for controlling the bias voltage generation means, wherein said first bias potential detecting threshold level of said first delay circuit is higher than said second bias potential detecting threshold level of said second delay circuit and said first delay circuit has a shorter delay time than said second delay circuit.
Claim 3
Dependent Claim
22 words
A bias voltage generation circuit according to claim 1, wherein said internal region is a well region formed inside the semiconductor substrate.
Claim 4
Dependent Claim
27 words
A bias voltage generator circuit according to claim 1, wherein said internal region is a semiconductor substrate region having a conductivity type opposite to said semiconductor substrate.
Claim 5
Dependent Claim
102 words
A bias voltage generation circuit comprising: bias voltage generation means for applying a predetermined negative bias potential to an internal region of a semiconductor substrate; detection means for detecting the negative bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least two delay circuits having different negative bias potential detecting threshold levels, for controlling the bias voltage generation means, wherein a first of said delay circuits has a higher negative bias potential detecting threshold level and provides a shorter delay time than a second of said delay circuits.
Claim 6
Dependent Claim
102 words
A bias voltage generation circuit comprising: bias voltage generation means for applying a predetermined negative bias potential to an internal region of a semiconductor substrate; detection means for detecting the negative bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least two delay circuits having different negative bias potential detecting threshold levels, for controlling the bias voltage generation means, wherein a first of said delay circuits has a higher negative bias potential detecting threshold level and provides a shorter delay time than a second of said delay circuits.
Claim 7
Dependent Claim
22 words
A bias voltage generation circuit according to claim 4, wherein said internal region is a well region formed inside the semiconductor substrate.
Claim 8
Dependent Claim
27 words
A bias voltage generation circuit according to claim 4, wherein said internal region is a semiconductor substrate region having a conductivity type opposite to said semiconductor substrate.
Claim 9
Dependent Claim
128 words
A bias voltage generation circuit for use in a semiconductor memory device, comprising: a MOS transistor formed in an element region of a semiconductor substrate; bias voltage generation means for applying a predetermined bias potential to a semiconductor region, formed inside the element region and corresponding to a back gate of the MOS transistor; detection means for detecting the bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least two delay circuits having different bias potential detecting threshold levels, for controlling the bias voltage generation means, wherein a first of said delay circuits has a higher bias potential detecting threshold level and provides a shorter delay time than a second of said delay circuits.
Claim 10
Dependent Claim
128 words
A bias voltage generation circuit for use in a semiconductor memory device, comprising: a MOS transistor formed in an element region of a semiconductor substrate; bias voltage generation means for applying a predetermined bias potential to a semiconductor region, formed inside the element region and corresponding to a back gate of the MOS transistor; detection means for detecting the bias potential so as to control the bias voltage generation means; and signal control means, incorporated in the detection means and including at least two delay circuits having different bias potential detecting threshold levels, for controlling the bias voltage generation means, wherein a first of said delay circuits has a higher bias potential detecting threshold level and provides a shorter delay time than a second of said delay circuits.
Claim 11
Dependent Claim
27 words
A bias voltage generation circuit according to claim 7, wherein said semiconductor region formed inside the element region is a well region formed inside the semiconductor substrate.
Claim 12
Dependent Claim
32 words
A bias voltage generation circuit according to claim 7, wherein said semiconductor region formed inside the element region is a semiconductor substrate region having a conductivity type opposite to said semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-09 | 1999-10-09 | 2000-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-09 | 2003-10-09 | 2004-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-09 | 2007-10-09 | 2008-04-09 | $7700.00 | Window Closed / Lapsed |