High Tc superconducting band reject ferroelectric filter (TFF)

Claim 2

A monolithic band reject tunable ferroelectric filter having electric field dependent permittivity, having different operating frequencies, an input, an output and comprising: a main microstrip transmission line disposed on a film of a single crystal dielectric material; a first transmission means for coupling energy into said main microstrip line at the input; a first branch microstrip line resonator, half a wavelength long at a first operating frequency of the filter, being disposed on a film of a single crystal ferroelectric, and being coupled to and separate from the said main microstrip transmission line; said film of a single crystal dielectric material being extended up to the said film of a single crystal ferroelectric material without leaving any airgap therebetween; second, third, . . . nth branch microstrip line resonators, each half a wavelength long at respectively second, third . . nth operating frequencies of the filter, being disposed on the same film of a single crystal ferroelectric material as associated with said first branch microstrip line resonator and being respectively coupled to and separate from said main microstrip line; said first, second, third, . . . nth branch microstrip line resonators being operated at separate frequencies; in the vicinity of a resonant frequency of a corresponding said branch resonator, a low impedance is present on said main microstrip transmission line reducing the level of signal flowing through said main transmission line: respective separation distances between centers of adjacent resonators being typically three quarters of a wavelength at an operating frequency of the filter; conductors of said main microstrip transmission line and said microstrip line resonators being respectively comprised of a film of a conductor material; a second transmission means for coupling energy from said main microstrip line at the output: means, associated with the filter, for applying separate bias voltages to said first, second, third, . . . nth microstrip line resonators; a microprocessor for controlling the separate bias voltages of said first, second, third . . . nth microstrip line resonators; and said filter being operated at a constant temperature appropriately above the Curie temperature associated with said ferroelectric material of film.

Claim 3

The monolithic band reject tunable ferroelectric filter of claim 1 wherein the single crystal ferroelectric material being KTa 1-x Nb x O 3 .

Claim 4

The monolithic band reject tunable ferroelectric filter of claim 1 wherein the single crystal ferroelectric material being Sr 1-x Pb x TiO 3 .

Claim 5

The monolithic band reject tunable ferroelectric filter of claim 3 wherein the single crystal high Tc superconductor being YBCO.

Claim 6

The monolithic band reject tunable ferroelectric filter of claim 4 wherein the single crystal dielectric material being sapphire.

Claim 7

A band reject tunable ferroelectric filter having electric field dependent permittivity, having different operating frequencies, an input, an output, and comprising: a main microstrip transmission line disposed on a single crystal dielectric material; a first transmission means for coupling energy into said main microstrip line at the input; a first branch microstrip line resonator, half a wavelength long at a first operating frequency of the filter, being disposed on a single crystal ferroelectric, and being coupled to and separate from the said main microstrip transmission line; said single crystal dielectric material being extended up to the said single crystal ferroelectric material without leaving any airgap therebetween; second, third, . . . nth branch microstrip line resonators, each half a wavelength long at respectively second, third . . nth operating frequencies of the filter, being disposed on the same single crystal ferroelectric material as associated with said first branch microstrip line resonator and being respectively coupled to and separate from said main microstrip line; said first, second, third, . . . nth branch microstrip line resonators being operated at separate frequencies; in the vicinity of a resonant frequency of a corresponding said branch resonator, a low impedance is present on said main microstrip transmission line reducing the level of signal flowing through said main transmission line; respective separation distances between centers of adjacent resonators being typically three quarters of a wavelength at an operating frequency of the filter; conductors of said main microstrip transmission line and said microstrip line resonators being respectively comprised of a film of a single crystal high Tc superconductor material; a second transmission means for coupling energy from said main microstrip line at the output; means, associated with the filter, for applying separate bias voltages to said first, second, third, . . . nth microstrip line resonators; a microprocessor for controlling the separate bias voltages of said first, second, third . . . nth microstrip line resonators; and said filter being operated at a high Tc superconducting temperature appropriately above the Curie temperature associated with said ferroelectric material.

Claim 8

A band reject tunable ferroelectric filter having electric field dependent permittivity, having different operating frequencies, an input, an output, and comprising: a main microstrip transmission line disposed on a single crystal dielectric material; a first transmission means for coupling energy into said main microstrip line at the input; a first branch microstrip line resonator, half a wavelength long at a first operating frequency of the filter, being disposed on a single crystal ferroelectric, and being coupled to and separate from the said main microstrip transmission line; said single crystal dielectric material being extended up to the said single crystal ferroelectric material without leaving any airgap therebetween; second, third, . . . nth branch microstrip line resonators, each half a wavelength long at respectively second, third . . nth operating frequencies of the filter, being disposed on the same single crystal ferroelectric material as associated with said first branch microstrip line resonator and being respectively coupled to and separate from said main microstrip line; said first, second, third, . . . nth branch microstrip line resonators being operated at separate frequencies; in the vicinity of a resonant frequency of a corresponding said branch resonator, a low impedance is present on said main microstrip transmission line reducing the level of signal flowing through said main transmission line; respective separation distances between centers of adjacent resonators being typically three quarters of a wavelength at an operating frequency of the filter; conductors of said main microstrip transmission line and said microstrip line resonators being respectively comprised of a film of a single crystal high Tc superconductor material; a second transmission means for coupling energy from said main microstrip line at the output; means, associated with the filter, for applying separate bias voltages to said first, second, third, . . . nth microstrip line resonators; a microprocessor for controlling the separate bias voltages of said first, second, third . . . nth microstrip line resonators; and said filter being operated at a high Tc superconducting temperature appropriately above the Curie temperature associated with said ferroelectric material.

Claim 9

The band reject tunable ferroelectric filter of claim 6 wherein the single crystal ferroectric being a ferroelectric liquid crystal (FLC).

Claim 10

The band reject tunable ferroelectric filter of claim 6 wherein the single crystal high Tc superconductor is TBCCO.

Claim 11

The band reject tunable ferroelectric filter of claim 8 wherein the single crystal dielectric is sapphire.

Claim 12

The band reject tunable ferroelectric filter of claim 6 wherein the single crystal ferroelectric material being KTa 1-x Nb x O 3 .

Claim 13

The band reject tunable ferroelectric filter of claim 10 wherein the single crystal high Tc superconductor being YBCO.

Claim 14

The band reject tunable ferroelectric filter of claim 10 wherein the single crystal high Tc superconductor being TBCCO.

Claim 15

The band reject tunable ferroelectric filter of claim 12 wherein the single crystal dielectric being sapphire.

Claim 16

A monolithic band reject tunable ferroelectric filter having electric field dependent permittivity, having different operating frequencies, an input, an output, and comprising: a main microstrip transmission line disposed on a film of a single crystal dielectric material; a first transmission means for coupling energy into said main microstrip line at the input; a first branch microstrip line resonator, half a wavelength long at a first operating frequency of the filter, being disposed on a film of a single crystal ferroelectric, and being coupled to and separate from the said main microstrip transmission line; said film of a single crystal dielectric material being extended up to the said film of a single crystal ferroelectric material without leaving any airgap therebetween; second, third, . . . nth branch microstrip line resonators, each half a wavelength long at respectively second, third, . . nth operating frequencies of the filter, being respectively disposed on the same film of a single crystal ferroelectric material as associated with said first branch microstrip line resonator and respectively being coupled to and separate from said main microstrip line; said first, second, third, . . . nth branch microstrip line resonators being operated at separate frequencies; in the vicinity of a resonant frequency of a corresponding said branch resonator, a low impedance is present on said main microstrip transmission line reducing the level of signal flowing through said main transmission line; respective separation distances between centers of adjacent resonators being typically three quarters of a wavelength at an operating frequency of the filter; conductors of said main microstrip transmission line and said microstrip line resonators being respectively comprised of a film of a single crystal high Tc superconductor material; a second transmission means for coupling energy from said main microstrip line at the output: means, associated with the filter, for applying separate bias voltages to said first, second, third, . . . nth microstrip line resonators; a microprocessor for controlling the separate bias voltages of said first, second, third . . . nth microstrip line resonators; and said filter being operated at a high Tc superconducting temperature appropriately above the Curie temperature associated with said ferroelectric material of film.

Claim 17

A monolithic band reject tunable ferroelectric filter having electric field dependent permittivity, having different operating frequencies, an input, an output, and comprising: a main microstrip transmission line disposed on a film of a single crystal dielectric material; a first transmission means for coupling energy into said main microstrip line at the input; a first branch microstrip line resonator, half a wavelength long at a first operating frequency of the filter, being disposed on a film of a single crystal ferroelectric, and being coupled to and separate from the said main microstrip transmission line; said film of a single crystal dielectric material being extended up to the said film of a single crystal ferroelectric material without leaving any airgap therebetween; second, third, . . . nth branch microstrip line resonators, each half a wavelength long at respectively second, third, . . nth operating frequencies of the filter, being respectively disposed on the same film of a single crystal ferroelectric material as associated with said first branch microstrip line resonator and respectively being coupled to and separate from said main microstrip line; said first, second, third, . . . nth branch microstrip line resonators being operated at separate frequencies; in the vicinity of a resonant frequency of a corresponding said branch resonator, a low impedance is present on said main microstrip transmission line reducing the level of signal flowing through said main transmission line; respective separation distances between centers of adjacent resonators being typically three quarters of a wavelength at an operating frequency of the filter; conductors of said main microstrip transmission line and said microstrip line resonators being respectively comprised of a film of a single crystal high Tc superconductor material; a second transmission means for coupling energy from said main microstrip line at the output: means, associated with the filter, for applying separate bias voltages to said first, second, third, . . . nth microstrip line resonators; a microprocessor for controlling the separate bias voltages of said first, second, third . . . nth microstrip line resonators; and said filter being operated at a high Tc superconducting temperature appropriately above the Curie temperature associated with said ferroelectric material of film.

Claim 18

The monolithic band reject tunable ferroelectric filter of claim 14 wherein the single crystal ferroelectric material being Sr 1-x Pb x TiO 3 .

Claim 19

The monolithic band reject tunable ferroelectric filter of claim 15 wherein the single crystal high Tc superconductor being YBCO.

Claim 20

The monolithic band reject tunable ferroelectric filter of claim 15 wherein the single crystal high Tc superconductor being TBCCO.