US5494862A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor wafers
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1994-05-27
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Granted: 1996-02-27
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Expires: 2014-05-27
Abstract
Abstract A method for a flatter semiconductor wafer free of ORP-observed irregularity and particles generated in handling on the back side of the wafer, in which an alkaline etching is adopted to utilize its advantage and a slight polishing step is combined to a conventional method of this kind. A deficiency of alkaline etching which brings about rougher surface irregularities on the surface of a wafer is eliminated by the use of the step of slight polishing on the back surface after the etching step and the inherent advantage stands without a loss, so that particle generation from the back surface of a semiconductor wafer in handling is much reduced and what's more a flatter semiconductor wafer is realized and a yield of an electronic device fabrication is increased.
Inventors
- 👤 Tadahiro Kato
- 👤 Masami Nakano
- 👤 Sunao Shima
- 👤 Hisashi Masumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:20
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P50/00; Y; Y10; Y10S; Y10S438/00; Y10S438/906; Y10S438/928; Y10S438/959; Y10S438/974; Y10S438/977
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
89 words
A method of making a semiconductor wafer comprising the steps, in sequence, of: slicing a monocrystalline semiconductor ingot to obtain at least one semiconductor wafer, chamfering a periphery of said wafer, flattening surfaces of said wafer by lapping, etching surfaces of said wafer in an alkaline etching solution, partly removing surface irregularities on a first surface of said wafer by removing less than 3.0 μm of a portion of wafer surface by a polishing process, polishing a second surface of said wafer to be mirror-polished, and cleaning said wafer.
Claim 2
Independent Claim
89 words
A method of making a semiconductor wafer comprising the steps, in sequence, of: slicing a monocrystalline semiconductor ingot to obtain at least one semiconductor wafer, chamfering a periphery of said wafer, flattening surfaces of said wafer by lapping, etching surfaces of said wafer in an alkaline etching solution, partly removing surface irregularities on a first surface of said wafer by removing less than 3.0 μm of a portion of wafer surface by a polishing process, polishing a second surface of said wafer to be mirror-polished, and cleaning said wafer.
Claim 3
Independent Claim
92 words
A method of making a semiconductor wafer comprising the steps, in sequence, of: slicing a monocrystalline semiconductor ingot to obtain at least one semiconductor wafer, chamfering a periphery of said wafer, flattening surfaces of said wafer by lapping, etching surfaces of said wafer in an alkaline etching solution such that the peak-to-valley height of surfaces of said wafer is less the 1.5 μm, partly removing surface irregularities on a first surface of said wafer by a polishing process, polishing a second surface of said wafer to be mirror-polished, and cleaning said wafer.
Claim 4
Independent Claim
92 words
A method of making a semiconductor wafer comprising the steps, in sequence, of: slicing a monocrystalline semiconductor ingot to obtain at least one semiconductor wafer, chamfering a periphery of said wafer, flattening surfaces of said wafer by lapping, etching surfaces of said wafer in an alkaline etching solution such that the peak-to-valley height of surfaces of said wafer is less the 1.5 μm, partly removing surface irregularities on a first surface of said wafer by a polishing process, polishing a second surface of said wafer to be mirror-polished, and cleaning said wafer.
Claim 5
Dependent Claim
33 words
A method as recited in claim 1, wherein reflectivity achieved by said step of partly removing surface irregularities is equal to or less than 98% of reflectivity achieved by said mirror polishing step.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein the alkaline etching is performed by the use of an aqueous solution of sodium hydroxide or an aqueous solution of potassium hydroxide as an etching solution in the etching step.
Claim 7
Dependent Claim
21 words
A method according to claim 4, wherein the aqueous solution of sodium hydroxide is at a concentration of 45% by weight.
Claim 8
Dependent Claim
31 words
A method according to claim 4, wherein the surface of the wafer is finished by the alkaline etching step to a surface roughness having a peak-to-valley height of under 1.5 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-26 | 2007-08-28 | 2008-02-27 | $7700.00 | Window Closed / Lapsed |