CMOS Differential driver circuit for high offset ground

Claim 2

A CMOS driver circuit for differentially driving a pair of transmission lines at a first terminal in response to a signal on an input terminal for reception of said signal at a second terminal, said driver circuit comprising two pairs of drive transistors, each drive transistor having first and second source/drains and a gate, each drive transistor pair connected to one of said transmission line pair and having a NMOS drive transistor having a drain connected to a first voltage supply, a source connected to an output terminal connected to said one transmission line, a PMOS drive transistor having a drain connected to a second voltage supply, said second voltage supply at a lower voltage than said first voltage supply, and a source connected to said output terminal and said one transmission line; and digital logic means connected to said input terminal and to gates of said drive transistors, said digital logic means generating complementary signals for differential operation of said two pairs of drive transistors so that said NMOS transistor or said PMOS transistor of each driver transistor pair is alternatively turned on responsive to a signal on said input terminal, and including means for synchronizing said complementary signals on gates of said driver transistors; whereby signals on each transmission line operate in a narrowed voltage range with respect to said first and second voltage supplies for immunity from an offset in level of one of said voltage supplies at said second terminal.

Claim 3

The CMOS driver circuit as in claim 1 wherein said digital logic means comprises a plurality of paths connecting each gate of said drive transistors to said input terminal, each path having a plurality of serially-connected inverters.

Claim 4

The CMOS driver circuit as in claim 2 wherein said synchronizing means comprises a delay element in each one of said plurality of paths having a smaller number of serially-connected inverters than another path, whereby the total number of inverters and delay element in said one path is equal to the total number of inverters in said another path.

Claim 5

The CMOS driver circuit as in claim 3 wherein said delay element comprises a capacitive element.

Claim 6

The CMOS driver circuit as in claim 4 wherein said synchronizing means further comprises means in at least one inverter having an output node connected to a gate of one of said drive transistors for slowing the current flow through said output node whereby the switching of said one drive transistor is slowed.

Claim 7

The CMOS driver circuit as in claim 5 wherein said at least one inverter comprises an input node and a pair of complementary transistors, each transistor having a source and a drain and a gate, said transistors connected between said first and second voltage supplies by said sources and drains, and wherein said current slowing means comprises a third transistor having a source and drain and a gate, said third transistor connected serially to said complementary transistor pair between said first and second voltage supplies, said gates of said three transistors connected to said input node.

Claim 8

A CMOS driver circuit for differentially driving a pair of transmission lines at a first terminal in response to a signal on an input terminal for reception of said signal at a second terminal, said driver circuit comprising two pairs of drive transistors, each drive transistor having first and second source/drains and a gate, each drive transistor pair connected to one of said transmission line pair and having a NMOS drive transistor having a drain connected to a first voltage supply, a source connected to an output terminal connected to said one transmission line, a PMOS drive transistor having a drain connected to a ground voltage supply, said ground voltage supply at a lower voltage than said first voltage supply, and a source connected to said output terminal and said one transmission line; and digital logic means connected to said input terminal and to each gate of said drive transistors by a plurality of paths, each path having a plurality of serially-connected inverters, said digital logic means generating complementary signals for differential operation of said two pairs of drive transistors so that said NMOS transistor or said PMOS transistor of each driver transistor pair is alternatively turned on responsive to a signal on said input terminal, and including a delay element in each one of said plurality of paths having a smaller number of serially-connected inverters than another path, so that the total number of inverters and delay element in said one path is equal to the total number of inverters in said another path to synchronize said complementary signals on gates of said driver transistors; whereby signals on each transmission line operate in a narrowed voltage range with respect to said first and second voltage supplies for immunity from an offset in level of one of said voltage supplies at said second terminal.

Claim 9

A CMOS driver circuit for differentially driving a pair of transmission lines at a first terminal in response to a signal on an input terminal for reception of said signal at a second terminal, said driver circuit comprising two pairs of drive transistors, each drive transistor having first and second source/drains and a gate, each drive transistor pair connected to one of said transmission line pair and having a NMOS drive transistor having a drain connected to a first voltage supply, a source connected to an output terminal connected to said one transmission line, a PMOS drive transistor having a drain connected to a ground voltage supply, said ground voltage supply at a lower voltage than said first voltage supply, and a source connected to said output terminal and said one transmission line; and digital logic means connected to said input terminal and to each gate of said drive transistors by a plurality of paths, each path having a plurality of serially-connected inverters, said digital logic means generating complementary signals for differential operation of said two pairs of drive transistors so that said NMOS transistor or said PMOS transistor of each driver transistor pair is alternatively turned on responsive to a signal on said input terminal, and including a delay element in each one of said plurality of paths having a smaller number of serially-connected inverters than another path, so that the total number of inverters and delay element in said one path is equal to the total number of inverters in said another path to synchronize said complementary signals on gates of said driver transistors; whereby signals on each transmission line operate in a narrowed voltage range with respect to said first and second voltage supplies for immunity from an offset in level of one of said voltage supplies at said second terminal.

Claim 10

The CMOS driver circuit as in claim 7 wherein said delay element comprises a capacitive element.

Claim 11

The CMOS driver circuit as in claim 7 wherein said synchronizing means further comprises means in at least one inverter having an output node connected to a gate of one of said drive transistors for slowing the current flow through said output node whereby the switching of said one drive transistor is slowed.

Claim 12

The CMOS driver circuit as in claim 5 wherein said at least one inverter comprises an input node and a pair of complementary transistors, each transistor having a source and drain and a gate, said transistors connected between said first and second voltage supplies by said sources and drains, and wherein said current slowing means comprises a third transistor having a source and drain and a gate, said third transistor connected serially to said complementary transistor pair between said first and second voltage supplies, said gates of said three transistors connected to said input node.