US5491114A
Expired / Lapsed
US
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Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors
Assignee: Starfire Electronic Development and Marketing Ltd
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Filing: 1994-03-24
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Granted: 1996-02-13
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Expires: 2014-03-24
Abstract
Abstract A continuous semiconductor thin film is formed by providing a sheet of a substrate material and applying a continuous layer of nanocrystals of the semiconductor material onto the substrate. The layer of nanocrystals is melted at a temperature below that of the bulk, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film which forms a solid upon cooling. The nanocrystals may be sprayed onto the substrate, either from the liquid or gas phase. The substrate sheet is preferably tensioned during the application of the nanocrystalline layer, for example, with a set of rollers is used to provide the tensioning at a predetermined feed rate.
Inventors
- 👤 Avery N. Goldstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:16
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3461
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
82 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; tensioning the sheet; applying a continuous layer of nanocrystals of the semiconductor material; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 2
Independent Claim
82 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; tensioning the sheet; applying a continuous layer of nanocrystals of the semiconductor material; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein the nanocrystals have an average diameter of from 1 to 6 nm.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein the step of cooling the liquid thin film to form a solid thin film includes forming a thin film in the range of 2.5 to 25 nm.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein at least one set of rollers is used to provide the tensioning at a predetermined feed rate.
Claim 6
Dependent Claim
22 words
The method of claim 1, wherein the step of applying the continuous layer of nanocrystals includes spraying a solution containing the nanocrystals.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein the step of heating the layer of nanocrystals is carried out in a non-oxidizing atmosphere.
Claim 8
Dependent Claim
12 words
The process of claim 1, the semiconductor material being a compound semiconductor.
Claim 9
Dependent Claim
11 words
The process of claim 1, wherein the semiconductor material is silicon.
Claim 10
Dependent Claim
11 words
The process of claim 1 wherein the semiconductor material is germanium.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein the substrate material is an insulator.
Claim 12
Dependent Claim
12 words
The method of claim 1, wherein the substrate material is a metal.
Claim 13
Dependent Claim
12 words
The method of claim 1, wherein the substrate material is a polymer.
Claim 14
Dependent Claim
23 words
The method of claim 1, wherein the step of applying the continuous layer of nanocrystals includes application of the nanocrystals in powder form.
Claim 15
Dependent Claim
19 words
The method of claim 1, wherein the step of applying the continuous layer of nanocrystals includes a gas-phase application.
Claim 16
Dependent Claim
26 words
The method of claim 1, wherein the step of applying the continuous layer of nanocrystals includes transferring a layer of nanocrystals in a polymeric tape form.
Claim 17
Independent Claim
87 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; applying a continuous layer of nanocrystals of the semiconductor material by depositing the nanocrystals from the gas phase; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 18
Independent Claim
87 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; applying a continuous layer of nanocrystals of the semiconductor material by depositing the nanocrystals from the gas phase; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 19
Independent Claim
82 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; applying a continuous layer of nanocrystals of the semiconductor material in powder form; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 20
Independent Claim
82 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; applying a continuous layer of nanocrystals of the semiconductor material in powder form; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 21
Independent Claim
95 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; preparing a layer of nanocrystals of the semiconductor material in the form of a polymeric tape; transferring the tape layer to an area of the substrate; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 22
Independent Claim
95 words
The method of forming a continuous thin film of a semiconductor material onto a substrate, comprising the steps of: providing a sheet of a substrate material; preparing a layer of nanocrystals of the semiconductor material in the form of a polymeric tape; transferring the tape layer to an area of the substrate; heating the layer of nanocrystals at a temperature below that of the bulk melting temperature, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film; and cooling the thin film to form a solid.
Claim 23
Dependent Claim
64 words
The method of claim 18, wherein the step of preparing a layer of nanocrystals of semiconductor material in polymeric-tape form includes the steps of: mixing the nanocrystals with a suitable soluble polymer; spreading the mixture on a flat surface; driving off the polymeric component, leaving only a controlled layer of nanocrystals; and transferring the layer of nanocrystals to the substrate for final deposition thereon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-12 | 1999-08-14 | 2000-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-12 | 2003-08-14 | 2004-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-12 | 2007-08-14 | 2008-02-13 | $7700.00 | Window Closed / Lapsed |