US5488250A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hall effect modulation of resistor values
Assignee: Individual
•
Filing: 1994-06-01
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Granted: 1996-01-30
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Expires: 2014-06-01
Abstract
Abstract A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.
Inventors
- 👤 Falke Hennig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:06
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/40; G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/37; G11B5/372; G11B5/374; G11C; G11C11/00; G11C11/18; H10D48/30; H10D48/32; H10D48/366
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
121 words
Apparatus including a structure comprising: a first region of silicon material having a selected electron mobility; a second region of silicon material having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material; means for applying a magnetic field to both the first the second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material; and means for detecting the change in resistance caused by the magnetic field.
Claim 2
Dependent Claim
121 words
Apparatus including a structure comprising: a first region of silicon material having a selected electron mobility; a second region of silicon material having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material; means for applying a magnetic field to both the first the second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material; and means for detecting the change in resistance caused by the magnetic field.
Claim 3
Dependent Claim
26 words
Apparatus as in claim 1 wherein: the first region of silicon material comprises polycrystalline silicon; and the second region of silicon material comprises single crystal silicon.
Claim 4
Dependent Claim
26 words
Apparatus as in claim 1 wherein: the first region of silicon material comprises amorphous silicon; and the second region of silicon material comprises single crystal silicon.
Claim 5
Dependent Claim
138 words
A semiconductor memory cell comprising: a substrate; a first region of silicon material disposed in the substrate, the first region having a selected electron mobility; a second region of silicon material disposed in the substrate and having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region an in direct contact with the second region of silicon material, a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter; a region of electrically conductive material surrounding the region of magnetic material to form a current path; and wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
Claim 6
Dependent Claim
138 words
A semiconductor memory cell comprising: a substrate; a first region of silicon material disposed in the substrate, the first region having a selected electron mobility; a second region of silicon material disposed in the substrate and having a different electron mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region an in direct contact with the second region of silicon material, a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter; a region of electrically conductive material surrounding the region of magnetic material to form a current path; and wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
Claim 7
Dependent Claim
39 words
A semiconductor memory cell as in claim 4 wherein: the substrate and the first region comprise silicon having opposite impurity types; the second region of silicon material comprises polycrystalline silicon; and the region of electrically conductive material comprises aluminum.
Claim 8
Dependent Claim
25 words
A semiconductor memory cell as in claim 4 wherein the region of magnetic material comprises at least one of cobalt and chromium of their alloys.
Claim 9
Dependent Claim
28 words
A semiconductor memory cell as in claim 4 wherein the region of magnetic material comprises at least one of an oxide of cobalt and an oxide of chromium.
Claim 10
Independent Claim
137 words
A method of operating a memory cell which includes a substrate; a first region of silicon material having a selected electron mobility disposed in the substrate, a second region of silicon material having a different electron mobility than the first region of silicon material disposed in the substrate adjacent the first region, a region of magnetic material disposed on the substrate at least partially over the boundary region, a region of electrically conductive material disposed around the region of magnetic material to form a current path, the method comprising; introducing a current into the conductor to establish a magnetic field in the magnetic material in one of two directions to thereby effect the resistance of the first and second regions of silicon material; and detecting the resistance of at least one of the first and second regions.
Claim 11
Independent Claim
137 words
A method of operating a memory cell which includes a substrate; a first region of silicon material having a selected electron mobility disposed in the substrate, a second region of silicon material having a different electron mobility than the first region of silicon material disposed in the substrate adjacent the first region, a region of magnetic material disposed on the substrate at least partially over the boundary region, a region of electrically conductive material disposed around the region of magnetic material to form a current path, the method comprising; introducing a current into the conductor to establish a magnetic field in the magnetic material in one of two directions to thereby effect the resistance of the first and second regions of silicon material; and detecting the resistance of at least one of the first and second regions.
Claim 12
Dependent Claim
121 words
Apparatus including a structure comprising: a first region of silicon material having a selected hole mobility; a second region of silicon material having a different hole mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material; means for applying a magnetic field to both the first and second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material; and means for detecting the change in resistance caused by the magnetic field.
Claim 13
Dependent Claim
121 words
Apparatus including a structure comprising: a first region of silicon material having a selected hole mobility; a second region of silicon material having a different hole mobility than the first region of silicon material, the second region of silicon material being disposed adjacent the first region along a boundary region and in direct contact with the second region of silicon material; means for applying a magnetic field to both the first and second regions of silicon material in a direction perpendicular to the boundary region to thereby create a Hall voltage across the boundary region and modify the resistance of the first and second regions of silicon material; and means for detecting the change in resistance caused by the magnetic field.
Claim 14
Dependent Claim
24 words
Apparatus as in claim 9 wherein: the first region of material comprises polycrystalline silicon; and the second region of material comprises single crystal silicon.
Claim 15
Dependent Claim
24 words
Apparatus as in claim 9 wherein: the first region of material comprises amorphous silicon; and the second region of material comprises single crystal silicon.
Claim 16
Dependent Claim
142 words
A semiconductor memory cell comprising: a substrate; a first region of semiconductor material comprising silicon disposed in the substrate, the first region having a selected hole mobility; a second region of semiconductor material comprising silicon disposed in the substrate and having a different hole mobility than the first region of semiconductor material, the second region of semiconductor material being disposed adjacent the first region along a boundary region and in direct contact with the second region of semiconductor material; a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter; a region of electrically conductive material surrounding the region of magnetic material to form a current path; and wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
Claim 17
Dependent Claim
142 words
A semiconductor memory cell comprising: a substrate; a first region of semiconductor material comprising silicon disposed in the substrate, the first region having a selected hole mobility; a second region of semiconductor material comprising silicon disposed in the substrate and having a different hole mobility than the first region of semiconductor material, the second region of semiconductor material being disposed adjacent the first region along a boundary region and in direct contact with the second region of semiconductor material; a region of magnetic material disposed on the substrate and disposed at least partially over the boundary region, the region of magnetic material having a perimeter; a region of electrically conductive material surrounding the region of magnetic material to form a current path; and wherein the region of electrically conductive material is electrically isolated from the substrate and the region of magnetic material.
Claim 18
Dependent Claim
41 words
A semiconductor memory cell as in claim 12 wherein: the substrate and the first region comprise single crystal silicon having opposite impurity types; the second region of semiconductor material comprises polycrystalline silicon; and the region of electrically conductive material comprises aluminum.
Claim 19
Dependent Claim
25 words
A semiconductor memory cell as in claim 12 wherein the region of magnetic material comprises at least one of cobalt and chromium or their alloys.
Claim 20
Dependent Claim
28 words
A semiconductor memory cell as in claim 12 wherein the region of magnetic material comprises at least one of an oxide of cobalt and an oxide of chromium.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |