US5488242A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Toshiba Corp
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Filing: 1993-11-24
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Granted: 1996-01-30
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Expires: 2013-11-24
Abstract
Abstract In a DRAM having a structure in which a storage node electrode is formed via an insulator film in a trench formed in a memory cell region to thereby form a capacitor, and in which the storage node electrode is connected in the source/drain regions of a MOSFET through a storage node contact formed in a part of the insulator film, the trench is disposed so as to deviate widthwise in a channel region of the MOSFET, so that the distance between adjacent element regions is reduced without causing misalignment of masks used in the formation of the storage node contact, thereby to provide a miniaturized high-reliability DRAM. In addition, the storage node contact and the trench can be formed in large size.
Inventors
- 👤 Kazumasa Sunouchi
- 👤 Hiroshi Takato
- 👤 Tohru Ozaki
- 👤 Naoko Okabe
- 👤 Katsuhiko Hieda
- 👤 Fumio Horiguchi
- 👤 Akihiro Nitayama
- 👤 Takashi Yamada
- 👤 Kouji Hasimoto
- 👤 Satosi Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:12
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0385; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
183 words
A semiconductor memory device comprising a plurality of memory cells, each comprising: a MOSFET element region including a source region, and a drain region, and a gate, the source region and the drain region being of a first conductivity type and formed in a surface of a substrate of a second conductivity type at positions aligned with a longitudinal centerline of the element region that is parallel to a centerline of a bit line, the gate being formed between the source region and the drain region; a trench having an inside wall and formed in the substrate at a position centered in deviated relation to the longitudinal centerline of the element region; and a capacitor including a storage node electrode, a capacitor insulator film, and a plate electrode, the storage node electrode being formed on an insulation film provided on the inside wall of the trench and in contact with the source region or the drain region through a storage node contact formed in the insulation film, the capacitor insulator film and the plate electrode being successively laminated on the storage node electrode.
Claim 2
Dependent Claim
183 words
A semiconductor memory device comprising a plurality of memory cells, each comprising: a MOSFET element region including a source region, and a drain region, and a gate, the source region and the drain region being of a first conductivity type and formed in a surface of a substrate of a second conductivity type at positions aligned with a longitudinal centerline of the element region that is parallel to a centerline of a bit line, the gate being formed between the source region and the drain region; a trench having an inside wall and formed in the substrate at a position centered in deviated relation to the longitudinal centerline of the element region; and a capacitor including a storage node electrode, a capacitor insulator film, and a plate electrode, the storage node electrode being formed on an insulation film provided on the inside wall of the trench and in contact with the source region or the drain region through a storage node contact formed in the insulation film, the capacitor insulator film and the plate electrode being successively laminated on the storage node electrode.
Claim 3
Dependent Claim
34 words
A semiconductor memory device according to claim 1, wherein the storage node electrode is connected to one of the source region and the drain region through a diffusion layer of the first conductivity type.
Claim 4
Dependent Claim
52 words
A semiconductor memory device according to claim 1 or 2, wherein the storage node contact is formed in the insulation film centered in a position deviated from the longitudinal centerline of the element region, and in a direction opposite to the direction in which the trench is deviated from the longitudinal centerline.
Claim 5
Dependent Claim
56 words
A semiconductor memory device according to claim 1 or 2, wherein the memory cells are arranged in such a manner that two adjacent memory cells are deviated from each other in a direction in a direction in which bit lines are disposed and at a distance of one fourth of a distance between adjacent bit lines.
Claim 6
Dependent Claim
22 words
A semiconductor memory device according to claim 4, wherein the storage node contact is formed on a single side of the trench.
Claim 7
Dependent Claim
112 words
A semiconductor memory device on a substrate comprising a plurality of memory cells, each comprising: a MOSFET having a gate electrode connected to a word line extending in a first direction and a source/drain region provided on the substrate and arranged in a second direction perpendicular to the first direction; and a trench capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator disposed between the first and second electrodes, the trench capacitor coupled to said source/drain region through a storage node contact, said trench capacitor deviated by a predetermined distance in the first direction from a longitudinal centerline of the source/drain region extending in the second direction.
Claim 8
Dependent Claim
112 words
A semiconductor memory device on a substrate comprising a plurality of memory cells, each comprising: a MOSFET having a gate electrode connected to a word line extending in a first direction and a source/drain region provided on the substrate and arranged in a second direction perpendicular to the first direction; and a trench capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator disposed between the first and second electrodes, the trench capacitor coupled to said source/drain region through a storage node contact, said trench capacitor deviated by a predetermined distance in the first direction from a longitudinal centerline of the source/drain region extending in the second direction.
Claim 9
Dependent Claim
27 words
A semiconductor memory device according to claim 6, further comprising a plurality of bit lines coupled to said source/drain regions of respective ones of the memory cells.
Claim 10
Dependent Claim
30 words
A semiconductor memory device according to claim 7, wherein said trench capacitor of each respective said memory cell is arranged asymmetrically to the bit line coupled to said source/drain region.
Claim 11
Dependent Claim
35 words
A semiconductor memory device according to claim 6, wherein one of said first and second capacitor electrodes of said trench capacitor is the storage node contact coupled to said source/drain region through a diffusion layer.
Claim 12
Dependent Claim
38 words
A semiconductor memory device according to claim 6, wherein the storage node contact is positioned at a side of said trench capacitor opposite from the first direction of the deviation of the trench capacitor from the longitudinal centerline.
Claim 13
Dependent Claim
57 words
A semiconductor memory device according to claim 7, wherein the memory cells are arranged such that an adjacent two of the memory cells in the second direction are deviated from each other in the first direction by a distance equal to one fourth of a pitch of said plurality of bit lines extending in the second direction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |