US5485021A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with optical waveguides to achieve signal transmission using optical means
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1994-06-10
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Granted: 1996-01-16
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Expires: 2014-06-10
Abstract
Abstract A semiconductor device 30 is configured with a transparent insulator substrate 31 in which an optical waveguide(s) 37 is formed, a semiconductor thin film 32 is pasted on the transparent insulator substrate 31, an integrated circuit(s) 33 is formed on the semiconductor thin film 32, a light emitting device(s) 34 is connected to the wiring of the integrated circuit 33, and a light detecting device(s) 36 is optically connected to the light emitting device(s) 34 via the optical waveguide(s) 37. Some wiring segments of the integrated circuit 33 are thereby replaced with the optical waveguide(s) 37 so as to optically transmit signals.
Inventors
- 👤 Takao Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:41
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/43; H; H10; H10F; H10F77/00; H10F77/40; H10F77/407
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
146 words
A silicon-on-insulator (SOI) semiconductor device having a structure where a plurality of silicon thin films are isolated from each other wherein: at least one integrated circuit is formed in each of said thin film's; said thin films are attached on a light conducting electrically insulating substrate which serves as a substrates for electronic and optical devices; a light emitting device is located on said light conducting electrically insulating substrate and connected to interconnections of said integrated circuit formed in one of said semiconductor thin films; a light detecting device is located on said light conducting electrically insulating substrate and connected to interconnections of said integrated circuit formed in an other one of said semiconductor thin films; and an optical path is formed in said light conducting electrically insulating substrate to connect said light emitting device with said light detecting device so as to optically transmit signals.
Claim 2
Dependent Claim
146 words
A silicon-on-insulator (SOI) semiconductor device having a structure where a plurality of silicon thin films are isolated from each other wherein: at least one integrated circuit is formed in each of said thin film's; said thin films are attached on a light conducting electrically insulating substrate which serves as a substrates for electronic and optical devices; a light emitting device is located on said light conducting electrically insulating substrate and connected to interconnections of said integrated circuit formed in one of said semiconductor thin films; a light detecting device is located on said light conducting electrically insulating substrate and connected to interconnections of said integrated circuit formed in an other one of said semiconductor thin films; and an optical path is formed in said light conducting electrically insulating substrate to connect said light emitting device with said light detecting device so as to optically transmit signals.
Claim 3
Dependent Claim
31 words
A semiconductor device as described in claim 1 wherein said light conducting electrically insulating substrate is made of material selected from a group consisting of quartz glass, sapphire, and aluminum nitride.
Claim 4
Dependent Claim
35 words
A semiconductor device as described in claim 1 wherein an optical path altering means is provided in said light conducting electrically insulating substrate to alter the direction of the light from said light emitting device.
Claim 5
Dependent Claim
36 words
A semiconductor device as described in claim 3 wherein said optical path altering means comprises a slant surface facing a prescribed direction formed in said light conducting electrically insulating substrate and coated with a reflective film.
Claim 6
Dependent Claim
18 words
A semiconductor device as described in claim 4 wherein said reflective film is a metal vapor deposition film.
Claim 7
Dependent Claim
16 words
A semiconductor device as described in claim 1 wherein said light emitting device is a laserdiode.
Claim 8
Dependent Claim
16 words
A semiconductor device as described in claim 1 wherein said light detecting device is a photodiode.
Claim 9
Dependent Claim
33 words
A semiconductor device as described in claim 1 wherein lenses are provided on a surface of said light conducting electrically insulating substrate corresponding to a light emitting portion of said light emitting device.
Claim 10
Dependent Claim
31 words
A semiconductor device as described in claim 8 wherein said lens comprises an area with a high refractive index formed on a surface area of said light conducting electrically insulating substrate.
Claim 11
Dependent Claim
34 words
A semiconductor device as described in claim 1 wherein lenses are provided on a surface of said light conducting electrically insulating substrate corresponding to a light detecting surface portion of said light detecting device.
Claim 12
Dependent Claim
31 words
A semiconductor device as described in claim 10 wherein said lens comprises an area with a high refractive index formed on a surface area of said light conducting electrically insulating substrate.
Claim 13
Dependent Claim
44 words
A semiconductor device as described in claim 1 wherein lenses are provided on a surface of said light conducting electrically insulating substrate corresponding to a light emitting portion of said light emitting device and to a light detecting portion of said light detecting device.
Claim 14
Dependent Claim
31 words
A semiconductor device as described in claim 12 wherein said lens comprises an area with a high refractive index formed on a surface area of said light conducting electrically insulating substrate.
Claim 15
Dependent Claim
42 words
A layered semiconductor device comprising a plurality of semiconductor devices as described in claim 1 layered on top of each other, characterized by the fact that the interconnection between each of said plurality of semiconductor devices is achieved via optical signal transmission.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1999-01-15 | 1999-07-17 | 2000-01-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-15 | 2003-07-17 | 2004-01-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-15 | 2007-07-17 | 2008-01-16 | $7700.00 | Window Closed / Lapsed |